Inventor · disambiguated record
Nobuyuki Ohtsuka
Also filed as: OHBA TAKAYUKI · OHTSUKA NOBUYUKI
33 granted patents·2 pending applications·1,203 citations·filing 1988–2013
98Inventor score
Files withFUJITSU LTD19FUJITSU SEMICONDUCTOR LTD5HANEDA MASAKI3FUJITSU MICROELECTRONICS LTD2AKIYAMA SHINICHI1
Top patents by PatentIndex Score
35 records- 0197US5484664AHetero-epitaxially grown compound semiconductor substrateFUJITSU LTD·Filed 1994·Granted Jan 16, 1996·294 cites·4 claims
- 0296US7507666B2Manufacture method for semiconductor device having concave portions filled with conductor containing Cu as its main compositionFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Mar 24, 2009·49 cites·7 claims
- 0394US5130269AHetero-epitaxially grown compound semiconductor substrate and a method of growing the sameFUJITSU LTD·Filed 1989·Granted Jul 14, 1992·108 cites·4 claims
- 0492US8168532B2Method of manufacturing a multilayer interconnection structure in a semiconductor deviceHANEDA MASAKI·Filed 2008·Granted May 1, 2012·21 cites·13 claims
- 0592US7413977B2Method of manufacturing semiconductor device suitable for forming wiring using damascene methodFUJITSU LTD·Filed 2005·Granted Aug 19, 2008·17 cites·4 claims
- 0692US5300186AHetero-epitaxially grown compound semiconductor substrate and a method of growing the sameFUJITSU LTD·Filed 1992·Granted Apr 5, 1994·132 cites·6 claims
- 0792US5166092AMethod of growing compound semiconductor epitaxial layer by atomic layer epitaxyFUJITSU LTD·Filed 1990·Granted Nov 24, 1992·181 cites·20 claims
- 0891US7507659B2Fabrication process of a semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Mar 24, 2009·23 cites·12 claims
- 0989US6750541B2Semiconductor deviceFUJITSU LTD·Filed 2002·Granted Jun 15, 2004·47 cites·17 claims
- 1088US4861417AMethod of growing group III-V compound semiconductor epitaxial layerFUJITSU LTD·Filed 1988·Granted Aug 29, 1989·88 cites·30 claims
- 1187US6242808B1Semiconductor device with copper wiring and semiconductor device manufacturing methodFUJITSU LTD·Filed 1998·Granted Jun 5, 2001·87 cites·10 claims
- 1285US7846833B2Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor deviceFUJITSU LTD·Filed 2010·Granted Dec 7, 2010·7 cites·7 claims
- 1382US8071474B2Method of manufacturing semiconductor device suitable for forming wiring using damascene methodSHIMIZU NORIYOSHI·Filed 2010·Granted Dec 6, 2011·4 cites·7 claims
- 1481US7795141B2Method of manufacturing semiconductor device suitable for forming wiring using damascene methodFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Sep 14, 2010·5 cites·2 claims
- 1578US5608229AQuantum box semiconductor deviceFUJITSU LTD·Filed 1995·Granted Mar 4, 1997·40 cites·18 claims
- 1675US8551832B2Method for manufacturing semiconductor deviceAKIYAMA SHINICHI·Filed 2010·Granted Oct 8, 2013·3 cites·11 claims
- 1775US8415798B2Semiconductor device having a conductor buried in an openingOHTSUKA NOBUYUKI·Filed 2010·Granted Apr 9, 2013·4 cites·7 claims
- 1873US7713869B2Manufacture method for semiconductor device suitable for forming wirings by damascene method and semiconductor deviceFUJITSU LTD·Filed 2005·Granted May 11, 2010·5 cites·5 claims
- 1973US7199044B2Method for manufacturing semiconductor deviceFUJITSU LTD·Filed 2004·Granted Apr 3, 2007·14 cites·20 claims
- 2069US7928476B2Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Apr 19, 2011·3 cites·5 claims
- 2163US6992005B2Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2004·Granted Jan 31, 2006·9 cites·14 claims
- 2262US7935624B2Fabrication method of semiconductor device having a barrier layer containing MnFUJITSU SEMICONDUCTOR LTD·Filed 2007·Granted May 3, 2011·2 cites·17 claims
- 2361US8067836B2Semiconductor device with reduced increase in copper film resistanceHANEDA MASAKI·Filed 2009·Granted Nov 29, 2011·1 cites·6 claims
- 2461US6746957B2Manufacture of semiconductor device with copper wiringFUJITSU LTD·Filed 2001·Granted Jun 8, 2004·7 cites·33 claims
- 2554US6420467B1Curable resin composition, adhesive composition, cured product and compositeDENKI KAGAKU KOGYO KK·Filed 1998·Granted Jul 16, 2002·15 cites·16 claims
- 2653US8889505B2Method for manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Nov 18, 2014·0 cites·2 claims
- 2752US5817538AMethod of making quantum box semiconductor deviceFUJITSU LTD·Filed 1996·Granted Oct 6, 1998·12 cites·12 claims
- 2850US7279790B2Semiconductor device and a manufacturing method thereofFUJITSU LTD·Filed 2002·Granted Oct 9, 2007·4 cites·6 claims
- 2949US9559058B2Semiconductor device and method for manufacturing the sameHANEDA MASAKI·Filed 2012·Granted Jan 31, 2017·0 cites·8 claims
- 3048US6159854AProcess of growing conductive layer from gas phaseFUJITSU LTD·Filed 1995·Granted Dec 12, 2000·15 cites·19 claims
- 3147US2011183515A1Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2011·Application pending·0 cites
- 3244US5296088ACompound semiconductor crystal growing methodFUJITSU LTD·Filed 1992·Granted Mar 22, 1994·6 cites·15 claims
- 3339US2005121786A1Semiconductor device and its manufacturing methodSEMICONDUCTOR LEADING EDGE TEC·Filed 2004·Application pending·0 cites
- 3438US8101513B2Manufacture method for semiconductor device using damascene methodKANKI TSUYOSHI·Filed 2006·Granted Jan 24, 2012·0 cites·9 claims
- 3537US6900542B2Semiconductor device having increased adhesion between a barrier layer for preventing copper diffusion and a conductive layer, and method of manufacturing the sameFUJITSU LTD·Filed 2003·Granted May 31, 2005·0 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →