Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device has a first insulating film formed over a semiconductor substrate, a first opening formed in the first insulating film, a first manganese oxide film formed along an inner wall of the first opening, a first copper wiring embedded in the first opening, and a second manganese oxide film formed on the first copper wiring including carbon.

1 . A method of manufacturing a semiconductor device comprising:
 forming a first insulating film over a semiconductor substrate;   forming a first opening in the first insulating film;   forming a metal film including manganese along an inner wall of the first opening;   forming a first copper wiring in the first opening;   planarizing the first insulating film and the first copper wiring;   forming a film including carbon over the first copper wiring; and   forming a manganese oxide film including carbon over the first copper wiring by performing a heat treatment.   
     
     
         2 . The method according to  claim 1 , wherein the film is a silicon carbide film and the silicon carbide film is formed at a temperature in the range from 350° C. to 400° C. 
     
     
         3 . The method according to  claim 1 , wherein the film is a silicon carbide film and the silicon carbide film including oxygen at a concentration in the range from 3% to 18%. 
     
     
         4 . The method according to  claim 1 , wherein the film is formed by plasma chemical vapor deposition. 
     
     
         5 . The method according to  claim 1 , further comprising forming a second insulating film over the manganese oxide film. 
     
     
         6 . The method according to  claim 1 , further comprising forming a silicon carbide insulating film over the manganese oxide film. 
     
     
         7 . The method according to  claim 1 , further comprising:
 forming a second insulating film over the first insulating film and the manganese oxide film;   forming a second opening in the second insulating film; and   forming a second copper wiring in the second opening;   wherein a portion of the manganese oxide film is removed to make an electric contact between the first copper wiring and the second copper wiring.   
     
     
         8 . The method according to  claim 7 , further comprising forming a high-melting-point metal film along an inner wall of each of the first opening and the second opening. 
     
     
         9 . The method according to  claim 1 , further comprising forming a hydrocarbon insulating film over the manganese oxide film as the film. 
     
     
         10 . The method according to  claim 9 , wherein the hydrocarbon insulating film is removed by etching using a H 2  or NH 3  gas. 
     
     
         11 . The method according to  claim 1 , wherein the film is formed by a coating method.