Inventor · disambiguated record
Tamotsu Owada
Also filed as: OWADA TAMOTSU
27 granted patents·11 pending applications·293 citations·filing 1993–2015
96Inventor score
Files withFUJITSU SEMICONDUCTOR LTD16FUJITSU LTD14FUJITSU MICROELECTRONICS LTD3OWADA TAMOTSU3KOUNO TAKAHIRO1
Top patents by PatentIndex Score
38 records- 0195US8778814B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Jul 15, 2014·20 cites·7 claims
- 0294US6613834B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2001·Granted Sep 2, 2003·51 cites·6 claims
- 0391US9087873B2Semiconductor device manufacturing methodFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Jul 21, 2015·12 cites·10 claims
- 0489US6949830B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU LTD·Filed 2003·Granted Sep 27, 2005·45 cites·11 claims
- 0587US8105935B2Method of manufacturing a semiconductor deviceOHARA NAOKI·Filed 2008·Granted Jan 31, 2012·18 cites·17 claims
- 0684US7485570B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU LTD·Filed 2005·Granted Feb 3, 2009·8 cites·4 claims
- 0784US6958525B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2003·Granted Oct 25, 2005·17 cites·6 claims
- 0881US8349722B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Jan 8, 2013·6 cites·6 claims
- 0981US7642185B2Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 5, 2010·8 cites·19 claims
- 1078US7579277B2Semiconductor device and method for fabricating the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Aug 25, 2009·6 cites·10 claims
- 1178US5386430AExcimer laser processing method and apparatusFUJITSU LTD·Filed 1993·Granted Jan 31, 1995·46 cites·24 claims
- 1276US8026164B2Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2009·Granted Sep 27, 2011·5 cites·8 claims
- 1376US7763509B2Method of manufacturing semiconductor device including forming two stress films and irradiation of one stress filmFUJITSU SEMICONDUCTOR LTD·Filed 2006·Granted Jul 27, 2010·7 cites·4 claims
- 1472US7749897B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Jul 6, 2010·5 cites·4 claims
- 1569US7928476B2Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Apr 19, 2011·3 cites·5 claims
- 1663US7235866B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2005·Granted Jun 26, 2007·2 cites·3 claims
- 1762US8883613B2Manufacturing method of semiconductor device, processing method of semiconductor wafer, semiconductor waferFUJITSU SEMICONDUCTOR LTD·Filed 2012·Granted Nov 11, 2014·1 cites·11 claims
- 1857US8669177B2Semiconductor device and method for manufacturing semiconductor deviceKOUNO TAKAHIRO·Filed 2009·Granted Mar 11, 2014·1 cites·10 claims
- 1955US5349155AInsulating material for wiring substrate and method of producing multi-layered wiring substrateFUJITSU LTD·Filed 1993·Granted Sep 20, 1994·22 cites·5 claims
- 2054US9123728B2Semiconductor device and method for manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Sep 1, 2015·0 cites·7 claims
- 2153US7208405B2Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor deviceFUJITSU LTD·Filed 2004·Granted Apr 24, 2007·4 cites·8 claims
- 2253US6943431B2Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layerFUJITSU LTD·Filed 2003·Granted Sep 13, 2005·6 cites·3 claims
- 2351US2013247825A1Method of manufacturing semiconductor device and semiconductor device manufacturing apparatusFUJITSU SEMICONDUCTOR LTD·Filed 2013·Application pending·0 cites
- 2450US8604552B2Semiconductor device and method for fabricating semiconductor deviceOWADA TAMOTSU·Filed 2009·Granted Dec 10, 2013·0 cites·8 claims
- 2549US2015069586A1Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2014·Application pending·0 cites
- 2648US7541296B2Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Jun 2, 2009·0 cites·17 claims
- 2747US7256118B2Semiconductor device using low-K material as interlayer insulating film and its manufacture methodFUJITSU LTD·Filed 2005·Granted Aug 14, 2007·0 cites·6 claims
- 2847US2007123035A1Method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2006·Application pending·0 cites
- 2947US2011244677A1Method of manufacturing semiconductor device and semiconductor device manufacturing apparatusFUJITSU SEMICONDUCTOR LTD·Filed 2011·Application pending·0 cites
- 3047US2011183515A1Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2011·Application pending·0 cites
- 3147US2014306339A1Semiconductor device and manufacturing method of semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2014·Application pending·0 cites
- 3246US8916423B2Semiconductor device and method of manufacturing the sameFUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Dec 23, 2014·0 cites·9 claims
- 3345US2008057717A1Semiconductor device manufacturing methodFUJITSU LTD·Filed 2007·Application pending·0 cites
- 3444US2012252227A1Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceOWADA TAMOTSU·Filed 2012·Application pending·0 cites
- 3543US9236302B2Semiconductor device and manufacturing method of semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Jan 12, 2016·0 cites·11 claims
- 3643US2012322272A1Semiconductor device and method for fabricating semiconductor deviceOWADA TAMOTSU·Filed 2012·Application pending·0 cites
- 3741US2006205193A1Method for forming SiC-based film and method for fabricating semiconductor deviceFUJITSU LTD·Filed 2005·Application pending·0 cites
- 3837US2006087041A1Semiconductor deviceFUJITSU LTD·Filed 2005·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Tamotsu Owada files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →