Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor device

Abstract

A method of manufacturing a semiconductor device includes the steps of: preparing an underlying structure having a silicon carbide layer covering a copper wiring, and growing silicon oxycarbide on the underlying structure by vapor deposition using, as source gas, tetramethylcyclotetrasiloxane, carbon dioxide gas and oxygen gas, a flow rate of said oxygen gas being at most 3% of a flow rate of the carbon dioxide gas. The surface of the silicon carbide layer of the underlying structure may be treated with a plasma of weak oxidizing gas which contains oxygen and has a molecular weight larger than that of O 2 to bring the surface more hydrophilic. Film peel-off and cracks in the interlayer insulating layer decrease.

1 . A method of manufacturing a semiconductor device comprising the steps of:
 preparing an underlying structure having a semiconductor substrate, a copper wiring formed above said semiconductor substrate and a silicon carbide layer covering said copper wiring;   making hydrophilic a surface of the silicon carbide layer of said underlying structure by using plasma of oxidizing gas which contains oxygen and has a molecular weight larger than a molecular weight of O2; and   forming a low dielectric constant insulating layer on the surface of said hydrophilic silicon carbide layer, said low dielectric constant insulating layer having a specific dielectric constant lower than a specific dielectric constant of silicon oxide.   
     
     
         2 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said step of making hydrophilic by using the plasma is a step of exposing said underlying structure to down-flow of plasma. 
     
     
         3 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said step of making hydrophilic by using the plasma is performed in a same chamber as used by said step of forming said low dielectric constant layer. 
     
     
         4 . The method of manufacturing a semiconductor device according to  claim 1 , wherein said weak oxidizing gas is CO 2 .