Inventor · disambiguated record
Shun-Ichi Fukuyama
Also filed as: FUKUYAMA SHUN-ICHI
26 granted patents·3 pending applications·631 citations·filing 1985–2012
97Inventor score
Files withFUJITSU LTD22FUJITSU MICROELECTRONICS LTD3FUJITSU SEMICONDUCTOR LTD1OTSUKA SATOSHI1OWADA TAMOTSU1
Top patents by PatentIndex Score
29 records- 0197US4670299APreparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit boardFUJITSU LTD·Filed 1985·Granted Jun 2, 1987·87 cites·13 claims
- 0294US6613834B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2001·Granted Sep 2, 2003·51 cites·6 claims
- 0391US4988514APreparation of lower alkyl polysilsesquioxane and formation of insulating layer of silylated polymer on electronic circuit boardFUJITSU LTD·Filed 1988·Granted Jan 29, 1991·58 cites·13 claims
- 0489US6949830B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU LTD·Filed 2003·Granted Sep 27, 2005·45 cites·11 claims
- 0589US4657843AUse of polysilsesquioxane without hydroxyl group for forming maskFUJITSU LTD·Filed 1986·Granted Apr 14, 1987·62 cites·10 claims
- 0686US6707156B2Semiconductor device with multilevel wiring layersFUJITSU LTD·Filed 2003·Granted Mar 16, 2004·44 cites·20 claims
- 0784US7485570B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU LTD·Filed 2005·Granted Feb 3, 2009·8 cites·4 claims
- 0884US6958525B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2003·Granted Oct 25, 2005·17 cites·6 claims
- 0984US5770260AProcess for forming silicon dioxide filmFUJITSU LTD·Filed 1997·Granted Jun 23, 1998·63 cites·7 claims
- 1081US8349722B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Jan 8, 2013·6 cites·6 claims
- 1181US7642185B2Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 5, 2010·8 cites·19 claims
- 1279US4863833APattern-forming material and its production and useFUJITSU LTD·Filed 1987·Granted Sep 5, 1989·34 cites·2 claims
- 1378US7579277B2Semiconductor device and method for fabricating the sameFUJITSU MICROELECTRONICS LTD·Filed 2006·Granted Aug 25, 2009·6 cites·10 claims
- 1473US5976618AProcess for forming silicon dioxide filmFUJITSU LTD·Filed 1997·Granted Nov 2, 1999·37 cites·2 claims
- 1570US5240813APolysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereofFUJITSU LTD·Filed 1990·Granted Aug 31, 1993·27 cites·5 claims
- 1667US6737744B2Semiconductor device including porous insulating material and manufacturing method thereforFUJITSU LTD·Filed 2002·Granted May 18, 2004·15 cites·8 claims
- 1763US7235866B2Low dielectric constant film material, film and semiconductor device using such materialFUJITSU LTD·Filed 2005·Granted Jun 26, 2007·2 cites·3 claims
- 1862US6693046B2Method of manufacturing semiconductor device having multilevel wiringFUJITSU LTD·Filed 2003·Granted Feb 17, 2004·17 cites·20 claims
- 1960US5484687APolysilphenylenesiloxane, production process thereof, and resist material and semiconductor device formed thereofFUJITSU LTD·Filed 1993·Granted Jan 16, 1996·10 cites·14 claims
- 2055US7060909B2Composition for forming low dielectric constant insulating film, method of forming insulating film using the composition and electronic parts having the insulating film produced therebyFUJITSU LTD·Filed 2002·Granted Jun 13, 2006·4 cites·2 claims
- 2155US5949130ASemiconductor integrated circuit device employing interlayer insulating film with low dielectric constantFUJITSU LTD·Filed 1998·Granted Sep 7, 1999·20 cites·5 claims
- 2253US7208405B2Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor deviceFUJITSU LTD·Filed 2004·Granted Apr 24, 2007·4 cites·8 claims
- 2353US6943431B2Semiconductor device using low-k material as interlayer insulating film and including a surface modifying layerFUJITSU LTD·Filed 2003·Granted Sep 13, 2005·6 cites·3 claims
- 2448US7541296B2Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Jun 2, 2009·0 cites·17 claims
- 2547US7256118B2Semiconductor device using low-K material as interlayer insulating film and its manufacture methodFUJITSU LTD·Filed 2005·Granted Aug 14, 2007·0 cites·6 claims
- 2644US2012252227A1Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceOWADA TAMOTSU·Filed 2012·Application pending·0 cites
- 2737US2006087041A1Semiconductor deviceFUJITSU LTD·Filed 2005·Application pending·0 cites
- 2836US8188602B2Semiconductor device having multilevel copper wiring layers and its manufacture methodOTSUKA SATOSHI·Filed 2003·Granted May 29, 2012·0 cites·17 claims
- 2923US2002038910A1Semiconductor device and method of manufacturing the sameFiled 1999·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →