Inventor · disambiguated record
Hirofumi Watatani
Also filed as: WATATANI HIROFUMI
31 granted patents·8 pending applications·470 citations·filing 1994–2014
97Inventor score
Files withFUJITSU LTD23FUJITSU SEMICONDUCTOR LTD4OWADA TAMOTSU3SANDISK TECHNOLOGIES INC3AKIYAMA SHINICHI2
Top patents by PatentIndex Score
39 records- 0197US9437606B2Method of making a three-dimensional memory array with etch stopSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 6, 2016·38 cites·16 claims
- 0296US9099496B2Method of forming an active area with floating gate negative offset profile in FG NAND memorySANDISK TECHNOLOGIES INC·Filed 2014·Granted Aug 4, 2015·31 cites·34 claims
- 0393US9093480B2Spacer passivation for high aspect ratio etching of multilayer stacks for three dimensional NAND deviceSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jul 28, 2015·16 cites·23 claims
- 0489US6949830B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU LTD·Filed 2003·Granted Sep 27, 2005·45 cites·11 claims
- 0588US6153511ASemiconductor device having a multilayered interconnection structureFUJITSU LTD·Filed 1999·Granted Nov 28, 2000·75 cites·11 claims
- 0688US5620526AIn-situ cleaning of plasma treatment chamberFUJITSU LTD·Filed 1994·Granted Apr 15, 1997·69 cites·10 claims
- 0787US8105935B2Method of manufacturing a semiconductor deviceOHARA NAOKI·Filed 2008·Granted Jan 31, 2012·18 cites·17 claims
- 0886US6707156B2Semiconductor device with multilevel wiring layersFUJITSU LTD·Filed 2003·Granted Mar 16, 2004·44 cites·20 claims
- 0986US6602748B2Method for fabricating a semiconductor deviceFUJITSU LTD·Filed 2002·Granted Aug 5, 2003·26 cites·13 claims
- 1084US7485570B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU LTD·Filed 2005·Granted Feb 3, 2009·8 cites·4 claims
- 1181US8349722B2Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Jan 8, 2013·6 cites·6 claims
- 1281US7642185B2Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2007·Granted Jan 5, 2010·8 cites·19 claims
- 1378US7701016B2Semiconductor device having device characteristics improved by straining surface of active region and its manufacture methodFUJITSU LTD·Filed 2006·Granted Apr 20, 2010·7 cites·7 claims
- 1477US7951686B2Method of manufacturing semiconductor device having device characteristics improved by straining surface of active regionFUJITSU LTD·Filed 2010·Granted May 31, 2011·4 cites·9 claims
- 1573US8338953B2Method of manufacturing a semiconductor device and semiconductor deviceAKIYAMA SHINICHI·Filed 2011·Granted Dec 25, 2012·2 cites·4 claims
- 1672US7749897B2Method of manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Jul 6, 2010·5 cites·4 claims
- 1770US6514878B2Method of fabricating a semiconductor device having a multilayered interconnection structureFUJITSU LTD·Filed 2001·Granted Feb 4, 2003·10 cites·20 claims
- 1865US6632739B2Method for fabricating a semiconductor deviceFUJITSU LTD·Filed 2001·Granted Oct 14, 2003·7 cites·29 claims
- 1964US8030207B2Method of manufacturing a semiconductor device and semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2008·Granted Oct 4, 2011·1 cites·10 claims
- 2062US7001847B2Micro pattern forming method and semiconductor device manufacturing methodFUJITSU LTD·Filed 2003·Granted Feb 21, 2006·8 cites·5 claims
- 2162US6337519B1Semiconductor device having a multilayered interconnection structureFUJITSU LTD·Filed 2000·Granted Jan 8, 2002·6 cites·3 claims
- 2261US5905298ASemiconductor device having an insulation film of low permittivity and a fabrication process thereofFUJITSU LTD·Filed 1997·Granted May 18, 1999·26 cites·8 claims
- 2357US8669177B2Semiconductor device and method for manufacturing semiconductor deviceKOUNO TAKAHIRO·Filed 2009·Granted Mar 11, 2014·1 cites·10 claims
- 2455US8536708B2Method of manufacturing a semiconductor device and semiconductor deviceAKIYAMA SHINICHI·Filed 2012·Granted Sep 17, 2013·0 cites·8 claims
- 2554US9123728B2Semiconductor device and method for manufacturing semiconductor deviceFUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Sep 1, 2015·0 cites·7 claims
- 2654US2009149031A1Method of making a semiconductor device with residual amine group free multilayer interconnectionFUJITSU LTD·Filed 2008·Application pending·0 cites
- 2753US7208405B2Insulating film forming method capable of enhancing adhesion of silicon carbide film, etc. and semiconductor deviceFUJITSU LTD·Filed 2004·Granted Apr 24, 2007·4 cites·8 claims
- 2850US8604552B2Semiconductor device and method for fabricating semiconductor deviceOWADA TAMOTSU·Filed 2009·Granted Dec 10, 2013·0 cites·8 claims
- 2949US6605510B2Semiconductor device with both memories and logic circuits and its manufactureFUJITSU LTD·Filed 2002·Granted Aug 12, 2003·3 cites·9 claims
- 3048US7541296B2Method for forming insulating film, method for forming multilayer structure and method for manufacturing semiconductor deviceFUJITSU MICROELECTRONICS LTD·Filed 2005·Granted Jun 2, 2009·0 cites·17 claims
- 3147US6483150B1Semiconductor device with both memories and logic circuits and its manufactureFUJITSU LTD·Filed 2000·Granted Nov 19, 2002·2 cites·11 claims
- 3247US2007123035A1Method of manufacturing semiconductor deviceFUJITSU LTD·Filed 2006·Application pending·0 cites
- 3345US2008057717A1Semiconductor device manufacturing methodFUJITSU LTD·Filed 2007·Application pending·0 cites
- 3444US2012252227A1Silicon oxycarbide, growth method of silicon oxycarbide layer, semiconductor device and manufacture method for semiconductor deviceOWADA TAMOTSU·Filed 2012·Application pending·0 cites
- 3543US2012322272A1Semiconductor device and method for fabricating semiconductor deviceOWADA TAMOTSU·Filed 2012·Application pending·0 cites
- 3642US2007181966A1Fabrication process of semiconductor device and semiconductor deviceFUJITSU LTD·Filed 2006·Application pending·0 cites
- 3741US2006205193A1Method for forming SiC-based film and method for fabricating semiconductor deviceFUJITSU LTD·Filed 2005·Application pending·0 cites
- 3841US2003227087A1Semiconductor device and method of manufacturing the sameFUJITSU LTD·Filed 2003·Application pending·0 cites
- 3938US6852587B2Method for fabricating a semiconductor deviceFUJITSU LTD·Filed 2002·Granted Feb 8, 2005·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →