Inventor · disambiguated record
Oliver Blank
Also filed as: BLANK OLIVER
90 granted patents·16 pending applications·219 citations·filing 2008–2025
99Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG73INFINEON TECHNOLOGIES AUSTRIA14INFINEON TECHNOLOGIES AG8BLANK OLIVER5SIEMIENIEC RALF2
Top patents by PatentIndex Score
106 records- 0197US8558308B1Method of manufacturing a semiconductor device using a contact implant and a metallic recombination element and semiconductorBLANK OLIVER·Filed 2012·Granted Oct 15, 2013·47 cites·25 claims
- 0295US9680004B2Power MOSFET with seperate gate and field plate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jun 13, 2017·12 cites·15 claims
- 0395US8871593B1Semiconductor device with buried gate electrode and gate contactsINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Oct 28, 2014·20 cites·20 claims
- 0492US8907408B2Stress-reduced field-effect semiconductor device and method for forming thereforSEDLMAIER STEFAN·Filed 2012·Granted Dec 9, 2014·15 cites·19 claims
- 0591US10580888B1Oxygen inserted Si-layers for reduced contact implant outdiffusion in vertical power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 3, 2020·7 cites·22 claims
- 0691US9620636B2Semiconductor device with field electrode structures in a cell area and termination structures in an edge areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Apr 11, 2017·8 cites·17 claims
- 0790US11239147B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 1, 2022·2 cites·20 claims
- 0889US10355126B2Semiconductor devices and method for manufacturing semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Jul 16, 2019·6 cites·25 claims
- 0988US11462620B2Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Oct 4, 2022·1 cites·20 claims
- 1088US9543386B2Semiconductor device with field electrode structures, gate structures and auxiliary diode structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 10, 2017·5 cites·28 claims
- 1186US10510846B2Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Dec 17, 2019·3 cites·26 claims
- 1286US9450062B2Semiconductor device having polysilicon plugs with silicide crystallitesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 20, 2016·4 cites·9 claims
- 1385US9443973B2Semiconductor device with charge compensation region underneath gate trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 13, 2016·6 cites·9 claims
- 1485US9425788B1Current sensors and methods of improving accuracy thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Aug 23, 2016·9 cites·21 claims
- 1585US9252251B2Semiconductor component with a space saving edge structureHIRLER FRANZ·Filed 2011·Granted Feb 2, 2016·7 cites·23 claims
- 1684US2025380466A1Semiconductor device having a field plate electrode with an embedded strain-inducing materialINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 1783US11270948B2Semiconductor wafer, semiconductor chip and method of fabricating a semiconductor waferINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Mar 8, 2022·2 cites·16 claims
- 1881US11728427B2Power semiconductor device having a strain-inducing material embedded in an electrodeINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Aug 15, 2023·1 cites·30 claims
- 1981US9722036B2Semiconductor device with field electrode structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Aug 1, 2017·3 cites·12 claims
- 2080US9356141B2Semiconductor device having peripheral trench structuresINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 31, 2016·4 cites·17 claims
- 2179US10872957B2Semiconductor device with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 22, 2020·1 cites·20 claims
- 2279US9105713B2Semiconductor device with metal-filled groove in polysilicon gate electrodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Aug 11, 2015·3 cites·16 claims
- 2379US8088660B1Method for producing a plug in a semiconductor bodySIEMIENIEC RALF·Filed 2010·Granted Jan 3, 2012·5 cites·21 claims
- 2478US2022376062A1Semiconductor device having needle-shaped first field plate structures and needle-shaped second field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 2576US8975662B2Method of manufacturing a semiconductor device using an impurity source containing a metallic recombination element and semiconductor deviceHUTZLER MICHAEL·Filed 2012·Granted Mar 10, 2015·4 cites·15 claims
- 2676US8796764B2Semiconductor device comprising trench gate and buried source electrodesBLANK OLIVER·Filed 2008·Granted Aug 5, 2014·6 cites·13 claims
- 2776US8362551B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2011·Granted Jan 29, 2013·4 cites·22 claims
- 2875US10636883B2Semiconductor device including a gate trench and a source trenchINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Apr 28, 2020·1 cites·13 claims
- 2973US12471324B2Power semiconductor device having an electrode with an embedded materialINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Nov 11, 2025·0 cites·13 claims
- 3073US11876041B2Semiconductor device having a metallization structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jan 16, 2024·0 cites·20 claims
- 3173US7674678B2Method for producing a transistor component having a field plateINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Mar 9, 2010·5 cites·16 claims
- 3272US12166080B2Semiconductor transistor device having a titled body contact area and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Dec 10, 2024·0 cites·20 claims
- 3372US10910318B2Optically detectable reference feature for die separationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Feb 2, 2021·1 cites·21 claims
- 3472US10727331B2Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jul 28, 2020·1 cites·12 claims
- 3572US10388782B2Scalable current sense transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Aug 20, 2019·2 cites·22 claims
- 3672US7880226B2Integrated circuit device with a semiconductor body and method for the production of an integrated circuit deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Feb 1, 2011·4 cites·9 claims
- 3770US8487370B2Trench semiconductor device and method of manufacturingBLANK OLIVER·Filed 2010·Granted Jul 16, 2013·3 cites·25 claims
- 3869US12046563B2Semiconductor wafer having an auxiliary structure positioned in a scribe line region, semiconductor chip and method of fabricating a semiconductor waferINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jul 23, 2024·0 cites·13 claims
- 3969US11699725B2Semiconductor device having an alignment layer with mask pitsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jul 11, 2023·0 cites·20 claims
- 4069US10050113B2Semiconductor device with needle-shaped field plates and a gate structure with edge and node portionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Aug 14, 2018·1 cites·21 claims
- 4168US12431886B2Electronic circuit with a transistor device and a clamp circuit and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Sep 30, 2025·0 cites·14 claims
- 4268US12336255B2Semiconductor die having a sodium stopper in an insulation layer groove and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Jun 17, 2025·0 cites·23 claims
- 4368US11721638B2Optically detectable reference feature for processing a semiconductor waferINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Aug 8, 2023·0 cites·20 claims
- 4468US7879686B2Semiconductor device and method for manufacturingINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted Feb 1, 2011·3 cites·16 claims
- 4567US9324823B2Semiconductor device having a tapered gate structure and methodINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Apr 26, 2016·2 cites·19 claims
- 4666US11862692B2Contact structure for transistor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Jan 2, 2024·0 cites·21 claims
- 4766US9406763B2Stress-reduced field-effect semiconductor device and method for forming thereforINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Aug 2, 2016·1 cites·18 claims
- 4865US11670684B2Semiconductor transistor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jun 6, 2023·0 cites·19 claims
- 4964US11973016B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 30, 2024·0 cites·20 claims
- 5064US11699726B2Semiconductor die and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Jul 11, 2023·0 cites·15 claims
Showing the top 50 of 106 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →