Inventor · disambiguated record
Oliver Häberlen
Also filed as: HAEBERLEN OLIVER · HÄBERLEN OLIVER
32 granted patents·3 pending applications·246 citations·filing 2001–2024
96Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG15INFINEON TECHNOLOGIES AUSTRIA7CURATOLA GILBERTO5INFINEON TECHNOLOGIES AG3PRECHTL GERHARD2
Top patents by PatentIndex Score
35 records- 0197US9048303B1Group III-nitride-based enhancement mode transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Jun 2, 2015·32 cites·18 claims
- 0295US9768258B1Substrate structure, semiconductor component and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Sep 19, 2017·11 cites·23 claims
- 0394US8587033B1Monolithically integrated HEMT and current protection deviceRIEGER WALTER·Filed 2012·Granted Nov 19, 2013·24 cites·25 claims
- 0490US9837520B2Group III-nitride-based enhancement mode transistor having a multi-heterojunction fin structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 5, 2017·6 cites·17 claims
- 0589US8586993B2Normally-off compound semiconductor tunnel transistorCURATOLA GILBERTO·Filed 2012·Granted Nov 19, 2013·8 cites·26 claims
- 0688US9142550B2High-voltage cascaded diode with HEMT and monolithically integrated semiconductor diodeINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 22, 2015·9 cites·20 claims
- 0787US9443787B2Electronic component and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Sep 13, 2016·7 cites·16 claims
- 0887US9024356B2Compound semiconductor device with buried field plateCURATOLA GILBERTO·Filed 2011·Granted May 5, 2015·7 cites·16 claims
- 0987US6649459B2Method for manufacturing a semiconductor componentINFINEON TECHNOLOGIES AG·Filed 2001·Granted Nov 18, 2003·38 cites·14 claims
- 1085US9337279B2Group III-nitride-based enhancement mode transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted May 10, 2016·6 cites·22 claims
- 1185US7250343B2Power transistor arrangement and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Jul 31, 2007·37 cites·23 claims
- 1284US10600710B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Mar 24, 2020·3 cites·10 claims
- 1384US8872235B2Integrated Schottky diode for HEMTsPRECHTL GERHARD·Filed 2012·Granted Oct 28, 2014·6 cites·16 claims
- 1483US7186618B2Power transistor arrangement and method for fabricating itINFINEON TECHNOLOGIES AG·Filed 2004·Granted Mar 6, 2007·32 cites·18 claims
- 1577US10431504B2Method of manufacturing semiconductor devices by bonding a semiconductor disk on a base substrate, composite wafer and semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Oct 1, 2019·2 cites·12 claims
- 1675US10388736B2Methods of forming substrate structures and semiconductor componentsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Aug 20, 2019·1 cites·20 claims
- 1775US8674372B2HEMT with integrated low forward bias diodeCURATOLA GILBERTO·Filed 2011·Granted Mar 18, 2014·3 cites·29 claims
- 1871US12068379B2Semiconductor device having a lateral transistor device and an inverter that includes the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Aug 20, 2024·0 cites·17 claims
- 1970US9666705B2Contact structures for compound semiconductor devicesPRECHTL GERHARD·Filed 2012·Granted May 30, 2017·3 cites·18 claims
- 2070US9373688B2Normally-off high electron mobility transistorsCURATOLA GILBERTO·Filed 2011·Granted Jun 21, 2016·3 cites·26 claims
- 2170US9076763B2High breakdown voltage III-nitride deviceOSTERMAIER CLEMENS·Filed 2012·Granted Jul 7, 2015·2 cites·13 claims
- 2268US12431886B2Electronic circuit with a transistor device and a clamp circuit and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Sep 30, 2025·0 cites·14 claims
- 2365US9443941B2Compound semiconductor transistor with self aligned gateHÄBERLEN OLIVER·Filed 2012·Granted Sep 13, 2016·3 cites·6 claims
- 2464US9041066B2Protection device for normally-on and normally-off high electron mobility transistorsINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted May 26, 2015·1 cites·20 claims
- 2563US9356130B2HEMT with compensation structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted May 31, 2016·1 cites·20 claims
- 2663US2025203912A1Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 2757US2024030217A1Semiconductor device and method of fabricating a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Application pending·0 cites
- 2856US10304923B2Method of forming a vertical potential short in a periphery region of a III-nitride stack for preventing lateral leakageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted May 28, 2019·0 cites·20 claims
- 2956US8835932B2Normally-off compound semiconductor tunnel transistor with a plurality of charge carrier gasesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Sep 16, 2014·0 cites·17 claims
- 3055US8569799B2III-V semiconductor devices with buried contactsCURATOLA GILBERTO·Filed 2011·Granted Oct 29, 2013·1 cites·24 claims
- 3152US11114554B2High-electron-mobility transistor having a buried field plateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Sep 7, 2021·0 cites·11 claims
- 3252US9620472B2Method of manufacturing an electronic componentINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Apr 11, 2017·0 cites·6 claims
- 3351US10038051B2Vertical potential short in the periphery region of a III-nitride stack for preventing lateral leakageINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 31, 2018·0 cites·18 claims
- 3449US2016155834A1III-Nitride Device Having a Buried Insulating RegionINFINEON TECHNOLOGIES AUSTRIA·Filed 2016·Application pending·0 cites
- 3543US9590048B2Electronic deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Mar 7, 2017·0 cites·26 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →