Inventor · disambiguated record
Oliver Haeberlen
Also filed as: HAEBERLEN OLIVER
75 granted patents·10 pending applications·287 citations·filing 2004–2024
99Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG40INFINEON TECHNOLOGIES AG16INFINEON TECHNOLOGIES AUSTRIA15HAEBERLEN OLIVER6HIRLER FRANZ2
Top patents by PatentIndex Score
85 records- 0198US11417758B2Enhancement mode Group III nitride-based transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Aug 16, 2022·5 cites·18 claims
- 0297US8022474B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted Sep 20, 2011·34 cites·17 claims
- 0396US9305917B1High electron mobility transistor with RC network integrated into gate structureINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Apr 5, 2016·15 cites·20 claims
- 0495US7799614B2Method of fabricating a power electronic deviceINFINEON TECHNOLOGIES AG·Filed 2007·Granted Sep 21, 2010·30 cites·22 claims
- 0593US8618598B2Power MOSFET semiconductor deviceHAEBERLEN OLIVER·Filed 2011·Granted Dec 31, 2013·12 cites·5 claims
- 0693US8193559B2Monolithic semiconductor switches and method for manufacturingHAEBERLEN OLIVER·Filed 2011·Granted Jun 5, 2012·26 cites·17 claims
- 0791US9793391B2Power MOSFET semiconductorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 17, 2017·5 cites·6 claims
- 0890US10680069B2System and method for a GaN-based start-up circuitINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jun 9, 2020·6 cites·20 claims
- 0990US7851349B2Method for producing a connection electrode for two semiconductor zones arranged one above anotherINFINEON TECHNOLOGIES AUSTRIA·Filed 2006·Granted Dec 14, 2010·15 cites·11 claims
- 1089US11257941B2High electron mobility transistor with doped semiconductor region in gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Feb 22, 2022·2 cites·19 claims
- 1189US10840353B2High electron mobility transistor with dual thickness barrier layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Nov 17, 2020·4 cites·7 claims
- 1289US9837522B2III-nitride bidirectional deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 5, 2017·6 cites·22 claims
- 1389US9035355B2Multi-channel HEMTOSTERMAIER CLEMENS·Filed 2012·Granted May 19, 2015·10 cites·20 claims
- 1488US10283634B2Power MOSFET semiconductorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted May 7, 2019·3 cites·10 claims
- 1588US10199216B2Semiconductor wafer and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 5, 2019·5 cites·12 claims
- 1688US10153362B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 11, 2018·5 cites·14 claims
- 1788US9728630B2High-electron-mobility transistor having a buried field plateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Aug 8, 2017·7 cites·9 claims
- 1888US9647104B2Group III-nitride-based enhancement mode transistor having a heterojunction fin structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted May 9, 2017·5 cites·9 claims
- 1987US9847394B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Dec 19, 2017·5 cites·20 claims
- 2086US10516023B2High electron mobility transistor with deep charge carrier gas contact structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Dec 24, 2019·4 cites·21 claims
- 2185US11349012B2Group III nitride-based transistor device and method of fabricating a gate structure for a group III nitride-based transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted May 31, 2022·2 cites·16 claims
- 2285US9202909B2Power MOSFET semiconductorINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 1, 2015·4 cites·15 claims
- 2384US7943955B2Monolithic semiconductor switches and method for manufacturingINFINEON TECHNOLOGIES AUSTRIA·Filed 2009·Granted May 17, 2011·13 cites·8 claims
- 2482US12356653B2High electron mobility transistor with doped semiconductor region in gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Granted Jul 8, 2025·0 cites·17 claims
- 2582US9263545B2Method of manufacturing a high breakdown voltage III-nitride deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Feb 16, 2016·3 cites·13 claims
- 2682US7928553B2Power electronic deviceINFINEON TECHNOLOGIES AG·Filed 2010·Granted Apr 19, 2011·5 cites·13 claims
- 2781US9177893B2Semiconductor component with a front side and a back side metallization layer and manufacturing method thereofMAUDER ANTON·Filed 2011·Granted Nov 3, 2015·6 cites·13 claims
- 2880US10177061B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 8, 2019·3 cites·19 claims
- 2980US9509284B2Electronic circuit and method for operating a transistor arrangementINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Nov 29, 2016·5 cites·24 claims
- 3080US9196693B2Method of manufacturing a semiconductor device having a buried field plateINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted Nov 24, 2015·2 cites·10 claims
- 3178US10090406B2Non-planar normally off compound semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Oct 2, 2018·4 cites·20 claims
- 3276US7943449B2Semiconductor component structure with vertical dielectric layersINFINEON TECHNOLOGIES AUSTRIA·Filed 2008·Granted May 17, 2011·6 cites·20 claims
- 3374US10290566B2Electronic componentINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted May 14, 2019·3 cites·18 claims
- 3473US11929430B2High electron mobility transistor with doped semiconductor region in gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Mar 12, 2024·0 cites·18 claims
- 3572US9893158B2Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 13, 2018·1 cites·10 claims
- 3672US9406673B2Semiconductor component with transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2013·Granted Aug 2, 2016·3 cites·27 claims
- 3771US9735078B2Device including multiple semiconductor chips and multiple carriersINFINEON TECHNOLOGIES AG·Filed 2014·Granted Aug 15, 2017·2 cites·13 claims
- 3870US12471305B2Water and ion barrier for III-V semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2023·Granted Nov 11, 2025·0 cites·22 claims
- 3970US12094963B2Nitride semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 17, 2024·0 cites·16 claims
- 4068US8975696B2Lateral MOS power transistor having backside terminal electrodeHAEBERLEN OLIVER·Filed 2011·Granted Mar 10, 2015·2 cites·16 claims
- 4167US11721754B2Enhancement mode transistor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Aug 8, 2023·0 cites·21 claims
- 4267US10038085B2High electron mobility transistor with carrier injection mitigation gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jul 31, 2018·1 cites·4 claims
- 4367US9515162B2Surface treatment of semiconductor substrate using free radical state fluorine particlesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Dec 6, 2016·2 cites·14 claims
- 4467US9349829B2Method of manufacturing a multi-channel HEMTINFINEON TECHNOLOGIES AUSTRIA·Filed 2015·Granted May 24, 2016·1 cites·8 claims
- 4567US8946767B2Monolithic semiconductor switches and method for manufacturingHAEBERLEN OLIVER·Filed 2012·Granted Feb 3, 2015·2 cites·4 claims
- 4666US10074597B2Interdigit device on leadframe for evenly distributed current flowINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2017·Granted Sep 11, 2018·1 cites·20 claims
- 4765US11069782B2Semiconductor device comprising a gradually increasing field dielectric layer and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 4865US8067796B2Semiconductor component with cell structure and method for producing the sameHIRLER FRANZ·Filed 2008·Granted Nov 29, 2011·2 cites·20 claims
- 4964US11688777B2Semiconductor device and inverterINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jun 27, 2023·0 cites·16 claims
- 5064US9564524B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 7, 2017·1 cites·17 claims
Showing the top 50 of 85 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →