Inventor · disambiguated record
Oleg Laboutin
Also filed as: LABOUTIN OLEG
4 granted patents·6 pending applications·17 citations·filing 2013–2022
68Inventor score
Top patents by PatentIndex Score
10 records- 0188US9917156B1Nucleation layer for growth of III-nitride structuresIQE PLC·Filed 2016·Granted Mar 13, 2018·9 cites·40 claims
- 0279US9076812B2HEMT structure with iron-doping-stop component and methods of formingIQE KC LLC·Filed 2013·Granted Jul 7, 2015·8 cites·34 claims
- 0352US10580871B2Nucleation layer for growth of III-nitride structuresIQE PLC·Filed 2018·Granted Mar 3, 2020·0 cites·14 claims
- 0450US11133408B2Dielectric passivation for layered structuresIQE PLC·Filed 2019·Granted Sep 28, 2021·0 cites·20 claims
- 0545US2023097643A1Stress Management Layer for GaN HEMTIQE PLC·Filed 2022·Application pending·0 cites
- 0639US2013207078A1InGaN-Based Double Heterostructure Field Effect Transistor and Method of Forming the SameKOPIN CORP·Filed 2013·Application pending·0 cites
- 0734US2014151712A1Enhancement-mode high electron mobility transistor structure and method of making sameIQE KC LLC·Filed 2013·Application pending·0 cites
- 0834US2013341635A1Double aluminum nitride spacers for nitride high electron-mobility transistorsIQE KC LLC·Filed 2013·Application pending·0 cites
- 0934US2014167058A1Compositionally graded nitride-based high electron mobility transistorIQE KC LLC·Filed 2013·Application pending·0 cites
- 1031US2017170283A1Iii-nitride structures grown on silicon substrates with increased compressive stressIQE PLC·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →