Inventor · disambiguated record
Olivier Rayssac
Also filed as: RAYSSAC LEGAL REPRESENTATIVE PIERRE · RAYSSAC OLIVIER
50 granted patents·6 pending applications·690 citations·filing 1999–2011
98Inventor score
Files withSOITEC SILICON ON INSULATOR36COMMISSARIAT ENERGIE ATOMIQUE9LETERTRE FABRICE4RAYSSAC OLIVIER2DAVAL NICOLAS1
Top patents by PatentIndex Score
56 records- 0193US7839001B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2009·Granted Nov 23, 2010·15 cites·12 claims
- 0291US6756285B1Multilayer structure with controlled internal stresses and making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Jun 29, 2004·86 cites·17 claims
- 0390US7713369B2Detachable substrate or detachable structure and method for the production thereofCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted May 11, 2010·48 cites·18 claims
- 0490US7449394B2Atomic implantation and thermal treatment of a semiconductor layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Nov 11, 2008·20 cites·19 claims
- 0590US6204079B1Selective transfer of elements from one support to another supportCOMMISSARIAT ENERGIE ATOMIQUE·Filed 1999·Granted Mar 20, 2001·120 cites·23 claims
- 0689US8083115B2Substrate cutting device and methodRAYSSAC OLIVIER·Filed 2007·Granted Dec 27, 2011·13 cites·17 claims
- 0789US7939428B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2010·Granted May 10, 2011·7 cites·20 claims
- 0889US7615468B2Methods for making substrates and substrates formed therefromSOITEC SILICON ON INSULATOR·Filed 2007·Granted Nov 10, 2009·12 cites·25 claims
- 0989US7406994B2Substrate layer cutting device and methodSOITEC SILICON ON INSULATOR·Filed 2007·Granted Aug 5, 2008·17 cites·19 claims
- 1088US7902038B2Detachable substrate with controlled mechanical strength and method of producing sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2002·Granted Mar 8, 2011·50 cites·19 claims
- 1187US7670929B2Method for direct bonding two semiconductor substratesSOITEC SILICON ON INSULATOR·Filed 2007·Granted Mar 2, 2010·12 cites·18 claims
- 1287US6821376B1Method for separating two elements and a device thereforCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2000·Granted Nov 23, 2004·50 cites·42 claims
- 1386US7575988B2Method of fabricating a hybrid substrateSOITEC SILICON ON INSULATOR·Filed 2007·Granted Aug 18, 2009·14 cites·13 claims
- 1484US7888235B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2007·Granted Feb 15, 2011·7 cites·22 claims
- 1584US7182234B2Substrate cutting device and methodSOITEC SILICON ON INSULATOR·Filed 2004·Granted Feb 27, 2007·23 cites·15 claims
- 1683US7404870B2Methods for forming an assembly for transfer of a useful layerSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jul 29, 2008·6 cites·18 claims
- 1780US8507361B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialLETERTRE FABRICE·Filed 2011·Granted Aug 13, 2013·4 cites·23 claims
- 1880US7498245B2Embrittled substrate and method for making sameCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2001·Granted Mar 3, 2009·25 cites·29 claims
- 1980US6989314B2Semiconductor structure and method of making sameSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jan 24, 2006·27 cites·23 claims
- 2079US7122095B2Methods for forming an assembly for transfer of a useful layerSOITEC SILICON ON INSULATOR·Filed 2004·Granted Oct 17, 2006·16 cites·28 claims
- 2177US7276428B2Methods for forming a semiconductor structureSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 2, 2007·7 cites·22 claims
- 2275US8093687B2Methods for forming an assembly for transfer of a useful layer using a peripheral recess area to facilitate transferLETERTRE FABRICE·Filed 2008·Granted Jan 10, 2012·3 cites·21 claims
- 2375US7439160B2Methods for producing a semiconductor entitySOITEC SILICON ON INSULATOR·Filed 2006·Granted Oct 21, 2008·6 cites·20 claims
- 2472US7405135B2Substrate for stressed systems and method of making sameSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jul 29, 2008·3 cites·19 claims
- 2571US7544586B2Method of fabricating chips and an associated supportSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jun 9, 2009·3 cites·30 claims
- 2671US7279779B2Substrate assembly for stressed systemsSOITEC SILICON ON INSULATOR·Filed 2006·Granted Oct 9, 2007·4 cites·17 claims
- 2769US7060590B2Layer transfer methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Jun 13, 2006·18 cites·26 claims
- 2867US7145214B2Substrate for stressed systems and method of making sameSOITEC SILICON ON INSULATOR·Filed 2005·Granted Dec 5, 2006·2 cites·20 claims
- 2966US7189304B2Substrate layer cutting device and methodSOITEC SILICON ON INSULATOR·Filed 2003·Granted Mar 13, 2007·10 cites·22 claims
- 3065US7256101B2Methods for preparing a semiconductor assemblySOITEC SILICON ON INSULATOR·Filed 2004·Granted Aug 14, 2007·9 cites·25 claims
- 3165US6913971B2Layer transfer methodsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Jul 5, 2005·11 cites·22 claims
- 3263US8252664B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialLETERTRE FABRICE·Filed 2011·Granted Aug 28, 2012·1 cites·15 claims
- 3363US7615464B2Transfer method with a treatment of a surface to be bondedSOITEC SILICON ON INSULATOR·Filed 2005·Granted Nov 10, 2009·2 cites·18 claims
- 3463US7265029B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialSOITEC SILICON ON INSULATOR·Filed 2004·Granted Sep 4, 2007·6 cites·33 claims
- 3562US7163873B2Substrate for stressed systems and method of making sameSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jan 16, 2007·1 cites·20 claims
- 3660US7972939B2Transfer method with a treatment of a surface to be bondedSOITEC SILICON ON INSULATOR·Filed 2009·Granted Jul 5, 2011·1 cites·16 claims
- 3759US7892946B2Device and method for cutting an assemblySOITEC SILICON ON INSULATOR·Filed 2007·Granted Feb 22, 2011·1 cites·15 claims
- 3859US7391094B2Semiconductor structure and method of making sameSOITEC SILICON ON INSULATOR·Filed 2005·Granted Jun 24, 2008·1 cites·13 claims
- 3959US7041577B2Process for manufacturing a substrate and associated substrateSOITEC SILICON ON INSULATOR·Filed 2004·Granted May 9, 2006·6 cites·30 claims
- 4058US8012289B2Method of fabricating a release substrateSOITEC SILICON ON INSULATOR·Filed 2009·Granted Sep 6, 2011·0 cites·22 claims
- 4155US7232738B2Device and method for cutting an assemblySOITEC SILICON ON INSULATOR·Filed 2004·Granted Jun 19, 2007·5 cites·20 claims
- 4255US7067393B2Substrate assembly for stressed systemsSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jun 27, 2006·5 cites·26 claims
- 4352US10002763B2Fabrication of substrates with a useful layer of monocrystalline semiconductor materialLETERTRE FABRICE·Filed 2011·Granted Jun 19, 2018·0 cites·21 claims
- 4452US8991673B2Substrate cutting device and methodRAYSSAC OLIVIER·Filed 2011·Granted Mar 31, 2015·0 cites·19 claims
- 4552US6991944B2Surface treatment for multi-layer wafers formed from layers of materials chosen from among semiconducting materialsSOITEC SILICON ON INSULATOR·Filed 2004·Granted Jan 31, 2006·6 cites·29 claims
- 4650US7544265B2Method of fabricating a release substrateSOITEC SILICON ON INSULATOR·Filed 2006·Granted Jun 9, 2009·0 cites·20 claims
- 4749US7169683B2Preventive treatment method for a multilayer semiconductor structureSOITEC SILICON ON INSULATOR·Filed 2003·Granted Jan 30, 2007·2 cites·18 claims
- 4849US2011233733A1Method of fabricating a release substrateSOITEC SILICON ON INSULATOR·Filed 2011·Application pending·0 cites
- 4947US7235461B2Method for bonding semiconductor structures togetherCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2004·Granted Jun 26, 2007·2 cites·19 claims
- 5047US7056809B2Method for ion treating a semiconductor material for subsequent bondingSOITEC SILICON ON INSULATOR·Filed 2003·Granted Jun 6, 2006·2 cites·19 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →