Inventor · disambiguated record
Omid Zandi
Also filed as: ZANDI OMID
7 granted patents·3 pending applications·3 citations·filing 2019–2022
71Inventor score
Files withTOKYO ELECTRON LTD10
Top patents by PatentIndex Score
10 records- 0189US11691175B1Methods for area-selective deposition of polymer films using sequentially pulsed initiated chemical vapor deposition (spiCVD)TOKYO ELECTRON LTD·Filed 2022·Granted Jul 4, 2023·2 cites·23 claims
- 0285US12290835B2Methods for stabilization of self-assembled monolayers (SAMs) using sequentially pulsed initiated chemical vapor deposition (spiCVD)TOKYO ELECTRON LTD·Filed 2022·Granted May 6, 2025·1 cites·20 claims
- 0355US12237166B2Methods for selective removal of surface oxides on metal filmsTOKYO ELECTRON LTD·Filed 2022·Granted Feb 25, 2025·0 cites·21 claims
- 0451US10818512B2Photo-assisted chemical vapor etch for selective removal of rutheniumTOKYO ELECTRON LTD·Filed 2020·Granted Oct 27, 2020·0 cites·20 claims
- 0549US2022139776A1Method for filling recessed features in semiconductor devices with a low-resistivity metalTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
- 0648US10867815B2Photonically tuned etchant reactivity for wet etchingTOKYO ELECTRON LTD·Filed 2019·Granted Dec 15, 2020·0 cites·15 claims
- 0747US12112959B2Processing systems and platforms for roughness reduction of materials using illuminated etch solutionsTOKYO ELECTRON LTD·Filed 2019·Granted Oct 8, 2024·0 cites·18 claims
- 0847US10896824B2Roughness reduction methods for materials using illuminated etch solutionsTOKYO ELECTRON LTD·Filed 2019·Granted Jan 19, 2021·0 cites·27 claims
- 0946US2022254683A1Removal of stray ruthenium metal nuclei for selective ruthenium metal layer formationTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 1044US2021242031A1Method for using ultra-thin etch stop layers in selective atomic layer etchingTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Omid Zandi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →