Inventor · disambiguated record
Oreste Madia
Also filed as: MADIA ORESTE
14 granted patents·17 pending applications·25 citations·filing 2017–2025
88Inventor score
Top patents by PatentIndex Score
31 records- 0197US11728164B2Selective PEALD of oxide on dielectricASM IP HOLDING BV·Filed 2021·Granted Aug 15, 2023·4 cites·20 claims
- 0296US11139163B2Selective deposition of SiOC thin filmsASM IP HOLDING BV·Filed 2020·Granted Oct 5, 2021·3 cites·20 claims
- 0395US11664219B2Selective deposition of SiOC thin filmsASM IP HOLDING BV·Filed 2021·Granted May 30, 2023·2 cites·20 claims
- 0493US11170993B2Selective PEALD of oxide on dielectricASM IP HOLDING BV·Filed 2018·Granted Nov 9, 2021·8 cites·23 claims
- 0588US11158500B2Plasma enhanced deposition processes for controlled formation of oxygen containing thin filmsASM IP HOLDING BV·Filed 2018·Granted Oct 26, 2021·4 cites·18 claims
- 0684US10607895B2Method for forming a semiconductor device structure comprising a gate fill metalASM IP HOLDING BV·Filed 2017·Granted Mar 31, 2020·3 cites·65 claims
- 0781US12068156B2Selective deposition of SiOC thin filmsASM IP HOLDING BV·Filed 2023·Granted Aug 20, 2024·0 cites·20 claims
- 0880US2025374510A1Stackable memory devices with vertical channels and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0977US2025318228A1Germanium tin oxide-containing semiconductor device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1074US2024096711A1Method for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 1173US2025254924A1Semiconductor device with transistors on opposite sides of a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1272US12363970B2Germanium tin oxide-containing semiconductor device and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 1369US11776807B2Plasma enhanced deposition processes for controlled formation of oxygen containing thin filmsASM IP HOLDING BV·Filed 2021·Granted Oct 3, 2023·0 cites·19 claims
- 1469US11501965B2Plasma enhanced deposition processes for controlled formation of metal oxide thin filmsASM IP HOLDING BV·Filed 2018·Granted Nov 15, 2022·1 cites·15 claims
- 1569US2024357789A1Stackable memory devices with vertical channels and methods of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 1668US12310063B2Method for forming semiconductor device with transistors on opposite sides of a dielectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·20 claims
- 1761US2020227325A1Method for forming a semiconductor device structure and related semiconductor device structuresASM IP HOLDING BV·Filed 2020·Application pending·0 cites
- 1860US12021137B2Ni(Al)O p-type semiconductor via selective oxidation of NiAl and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 25, 2024·0 cites·20 claims
- 1959US2025280581A1Gate spacer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2055US12002860B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 4, 2024·0 cites·12 claims
- 2155US2025089337A1Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2255US2024363765A1Flash memory cell with tunable tunnel dielectric capacitanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2355US2024389315A1Flash memory with stackable memory cellsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2454US2024079495A1Memory device and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2553US11664222B2Atomic layer deposition of indium gallium zinc oxideASM IP HOLDING BV·Filed 2020·Granted May 30, 2023·0 cites·24 claims
- 2652US2023352296A1Structure and formation method of device with ferroelectric layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2751US2023387296A1Ferroelectric field effect transistor and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2850US2023041622A1Integrated chip, ferroelectric memory device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2950US2022123131A1Method of forming structures for threshold voltage controlASM IP HOLDING BV·Filed 2021·Application pending·0 cites
- 3046US2023035216A1Three-dimensional artificial neural network accelerator and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 3144US2021118671A1Atomic layer deposition of indium germanium zinc oxideASM IP HOLDING BV·Filed 2020·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →