Inventor · disambiguated record
Osamu Kusumoto
Also filed as: KUSUMOTO OSAMU
48 granted patents·1 pending application·1,004 citations·filing 1993–2019
98Inventor score
Files withMATSUSHITA ELECTRIC INDUSTRIAL CO LTD24PANASONIC CORP14PANASONIC IP MAN CO LTD7ADACHI KAZUHIRO2HASHIMOTO KOICHI1
Top patents by PatentIndex Score
49 records- 0196US7507999B2Semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2003·Granted Mar 24, 2009·133 cites·12 claims
- 0295US6995397B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·114 cites·26 claims
- 0391US8283973B2Semiconductor element, semiconductor device, and electric power converterHASHIMOTO KOICHI·Filed 2010·Granted Oct 9, 2012·17 cites·22 claims
- 0491US5381753AFabrication method of fine structuresMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Jan 17, 1995·79 cites·39 claims
- 0590US7671409B2Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependencePANASONIC CORP·Filed 2005·Granted Mar 2, 2010·18 cites·8 claims
- 0689US6989553B2Semiconductor device having an active region of alternating layersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jan 24, 2006·44 cites·9 claims
- 0789US6101164AHigh density recording by a conductive probe contact with phase change recording layerMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Aug 8, 2000·119 cites·23 claims
- 0886US6617653B1MisfetMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Sep 9, 2003·30 cites·28 claims
- 0985US7791308B2Semiconductor element and electrical apparatusPANASONIC CORP·Filed 2006·Granted Sep 7, 2010·14 cites·11 claims
- 1085US5357109AProbe for scanning tunneling microscope and manufacturing method thereofMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1993·Granted Oct 18, 1994·48 cites·8 claims
- 1184US9985125B1Silicon carbide semiconductor devicePANASONIC IP MAN CO LTD·Filed 2017·Granted May 29, 2018·6 cites·12 claims
- 1284US6690035B1Semiconductor device having an active region of alternating layersMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2000·Granted Feb 10, 2004·30 cites·4 claims
- 1384US6654604B2Equipment for communication systemMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Nov 25, 2003·28 cites·17 claims
- 1483US7220482B2Aligned fine particles, method for producing the same and device using the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 22, 2007·38 cites·12 claims
- 1582US9252211B2Semiconductor device and manufacturing method thereofPANASONIC IP MAN CO LTD·Filed 2015·Granted Feb 2, 2016·4 cites·9 claims
- 1682US8933463B2Semiconductor element, semiconductor device, and power converterADACHI KAZUHIRO·Filed 2013·Granted Jan 13, 2015·6 cites·40 claims
- 1782US7473929B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Jan 6, 2009·23 cites·13 claims
- 1881US9865591B2Silicon carbide semiconductor devicePANASONIC IP MAN CO LTD·Filed 2016·Granted Jan 9, 2018·3 cites·8 claims
- 1981US7462540B2Silicon carbide semiconductor device and process for producing the samePANASONIC CORP·Filed 2005·Granted Dec 9, 2008·7 cites·9 claims
- 2081US6995396B2Semiconductor substrate, semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·25 cites·11 claims
- 2178US8410489B2Semiconductor element, semiconductor device, and power converterADACHI KAZUHIRO·Filed 2010·Granted Apr 2, 2013·5 cites·38 claims
- 2277US7829374B2Silicon carbide semiconductor device and method for manufacturing the samePANASONIC CORP·Filed 2008·Granted Nov 9, 2010·7 cites·10 claims
- 2377US7230273B2Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 12, 2007·24 cites·9 claims
- 2477US6864507B2MisfetMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Mar 8, 2005·17 cites·30 claims
- 2577US6674131B2Semiconductor power device for high-temperature applicationsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jan 6, 2004·23 cites·4 claims
- 2675US6580125B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 17, 2003·18 cites·8 claims
- 2773US9923090B2Silicon carbide semiconductor element and method for manufacturing the samePANASONIC IP MAN CO LTD·Filed 2017·Granted Mar 20, 2018·2 cites·15 claims
- 2873US6940110B2SiC-MISFET and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·18 cites·10 claims
- 2972US9543858B2Semiconductor device and inverter using samePANASONIC IP MAN CO LTD·Filed 2014·Granted Jan 10, 2017·3 cites·19 claims
- 3072US7381993B2High-breakdown-voltage insulated gate semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Granted Jun 3, 2008·4 cites·14 claims
- 3170US6600203B2Semiconductor device with silicon carbide suppression layer for preventing extension of micropipeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 29, 2003·12 cites·3 claims
- 3269US7217954B2Silicon carbide semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 15, 2007·11 cites·14 claims
- 3369US6940127B2Equipment for communication system and semiconductor integrated circuit deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·12 cites·7 claims
- 3468US7964911B2Semiconductor element and electrical apparatusPANASONIC CORP·Filed 2006·Granted Jun 21, 2011·4 cites·13 claims
- 3568US7436031B2Device for implementing an inverter having a reduced sizeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·4 cites·14 claims
- 3667US9209262B2Silicon carbide semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2013·Granted Dec 8, 2015·2 cites·7 claims
- 3767US7982224B2Semiconductor device with silicon carbide epitaxial layer including dopant profiles for reducing current overconcentrationPANASONIC CORP·Filed 2008·Granted Jul 19, 2011·3 cites·8 claims
- 3867US6504176B2Field effect transistor and method of manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jan 7, 2003·13 cites·8 claims
- 3964US7709403B2Silicon carbide-oxide layered structure, production method thereof, and semiconductor devicePANASONIC CORP·Filed 2004·Granted May 4, 2010·11 cites·3 claims
- 4063US7846828B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Dec 7, 2010·1 cites·5 claims
- 4161US7772098B2Method for manufacturing semiconductor devicePANASONIC CORP·Filed 2008·Granted Aug 10, 2010·2 cites·10 claims
- 4258US7786565B2Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductorPANASONIC CORP·Filed 2004·Granted Aug 31, 2010·8 cites·10 claims
- 4355USRE49195ESilicon carbide semiconductor devicePANASONIC IP MAN CO LTD·Filed 2019·Granted Aug 30, 2022·0 cites·9 claims
- 4455US6900483B2Semiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 31, 2005·6 cites·25 claims
- 4549US7214984B2High-breakdown-voltage insulated gate semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 8, 2007·3 cites·17 claims
- 4645US7816688B2Semiconductor device and production method thereforPANASONIC CORP·Filed 2002·Granted Oct 19, 2010·2 cites·9 claims
- 4737US9985128B2Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2017·Granted May 29, 2018·0 cites·18 claims
- 4837US5835312AMagnetic head for use with a recording mediumMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1996·Granted Nov 10, 1998·3 cites·9 claims
- 4937US2001046757A1Method for fabricating semiconductor deviceFiled 2001·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Osamu Kusumoto files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →