Inventor · disambiguated record
Patrick H. Keys
Also filed as: KEYS PATRICK · KEYS PATRICK H
23 granted patents·7 pending applications·93 citations·filing 2003–2024
93Inventor score
Top patents by PatentIndex Score
30 records- 0194US9608059B2Semiconductor device with isolated body portionCAPPELLANI ANNALISA·Filed 2011·Granted Mar 28, 2017·18 cites·28 claims
- 0292US10026829B2Semiconductor device with isolated body portionINTEL CORP·Filed 2017·Granted Jul 17, 2018·8 cites·25 claims
- 0391US10790281B2Stacked channel structures for MOSFETsINTEL CORP·Filed 2015·Granted Sep 29, 2020·8 cites·25 claims
- 0490US11404319B2Vertically stacked finFETs and shared gate patterningINTEL CORP·Filed 2017·Granted Aug 2, 2022·5 cites·20 claims
- 0588US6936505B2Method of forming a shallow junctionINTEL CORP·Filed 2003·Granted Aug 30, 2005·43 cites·29 claims
- 0687US11107891B2Hexagonal arrays for quantum dot devicesINTEL CORP·Filed 2017·Granted Aug 31, 2021·4 cites·19 claims
- 0783US10483385B2Nanowire structures having wrap-around contactsCEA STEPHEN M·Filed 2011·Granted Nov 19, 2019·4 cites·24 claims
- 0875US10840366B2Nanowire structures having wrap-around contactsINTEL CORP·Filed 2019·Granted Nov 17, 2020·1 cites·20 claims
- 0975US10665770B2Fin strain in quantum dot devicesINTEL CORP·Filed 2018·Granted May 26, 2020·1 cites·25 claims
- 1073US11183564B2Quantum dot devices with strain controlINTEL CORP·Filed 2018·Granted Nov 23, 2021·1 cites·25 claims
- 1172US12484266B2Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layersINTEL CORP·Filed 2022·Granted Nov 25, 2025·0 cites·20 claims
- 1270US12100623B2Vertically stacked finFETs and shared gate patterningINTEL CORP·Filed 2022·Granted Sep 24, 2024·0 cites·17 claims
- 1369US11527613B2Removal of a bottom-most nanowire from a nanowire device stackINTEL CORP·Filed 2021·Granted Dec 13, 2022·0 cites·20 claims
- 1467US11757026B2Nanowire structures having wrap-around contactsGOOGLE LLC·Filed 2020·Granted Sep 12, 2023·0 cites·20 claims
- 1561US2025301779A1Transistor assemblies with patterned back side-filled isolation regionsINTEL CORP·Filed 2024·Application pending·0 cites
- 1659US12230687B2Lateral gate material arrangements for quantum dot devicesINTEL CORP·Filed 2020·Granted Feb 18, 2025·0 cites·21 claims
- 1757US11469299B2Gate-all-around integrated circuit structures having underlying dopant-diffusion blocking layersINTEL CORP·Filed 2018·Granted Oct 11, 2022·0 cites·25 claims
- 1856US10892326B2Removal of a bottom-most nanowire from a nanowire device stackINTEL CORP·Filed 2017·Granted Jan 12, 2021·0 cites·20 claims
- 1954US12199098B2Fin doping and integrated circuit structures resulting therefromINTEL CORP·Filed 2021·Granted Jan 14, 2025·0 cites·22 claims
- 2051US2023097948A1Transistor structures with reduced source/drain leakage through backside treatment of subfin semiconductor materialINTEL CORP·Filed 2021·Application pending·0 cites
- 2150US11495683B2Multiple strain states in epitaxial transistor channel through the incorporation of stress-relief defects within an underlying seed materialINTEL CORP·Filed 2020·Granted Nov 8, 2022·0 cites·23 claims
- 2250US10978590B2Methods and apparatus to remove epitaxial defects in semiconductorsINTEL CORP·Filed 2016·Granted Apr 13, 2021·0 cites·19 claims
- 2350US2022415708A1Transistors with source & drain etch stopINTEL CORP·Filed 2021·Application pending·0 cites
- 2447US2023095007A1Integrated circuit structures having metal-containing source or drain structuresINTEL CORP·Filed 2021·Application pending·0 cites
- 2543US10896907B2Retrograde transistor doping by heterojunction materialsINTEL CORP·Filed 2016·Granted Jan 19, 2021·0 cites·18 claims
- 2642US10636907B2Deep EPI enabled by backside reveal for stress enhancement and contactINTEL CORP·Filed 2015·Granted Apr 28, 2020·0 cites·22 claims
- 2742US7790587B2Method to reduce junction leakage through partial regrowth with ultrafast anneal and structures formed therebyINTEL CORP·Filed 2006·Granted Sep 7, 2010·0 cites·8 claims
- 2840US2006292776A1Strained field effect transistorsJIN BEEN-YIH·Filed 2005·Application pending·0 cites
- 2935US2018151733A1Carbon-based interface for epitaxially grown source/drain transistor regionsINTEL CORP·Filed 2015·Application pending·0 cites
- 3032US2007099404A1Implant and anneal amorphization processGOVINDARAJU SRIDHAR·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →