Inventor · disambiguated record
Padmapani Nallan
Also filed as: NALLAN PADMAPANI · NALLAN PADMAPANI C
33 granted patents·19 pending applications·1,200 citations·filing 1997–2006
98Inventor score
Top patents by PatentIndex Score
52 records- 0198US6642127B2Method for dicing a semiconductor waferAPPLIED MATERIALS INC·Filed 2001·Granted Nov 4, 2003·274 cites·22 claims
- 0295US6759263B2Method of patterning a layer of magnetic materialFiled 2002·Granted Jul 6, 2004·109 cites·24 claims
- 0392US6531404B1Method of etching titanium nitrideAPPLIED MATERIALS INC·Filed 2000·Granted Mar 11, 2003·61 cites·19 claims
- 0489US6759340B2Method of etching a trench in a silicon-on-insulator (SOI) structureFiled 2002·Granted Jul 6, 2004·45 cites·29 claims
- 0588US6964928B2Method for removing residue from a magneto-resistive random access memory (MRAM) film stack using a dual maskYING CHENTSAU·Filed 2002·Granted Nov 15, 2005·52 cites·20 claims
- 0687US6893893B2Method of preventing short circuits in magnetic film stacksAPPLIED MATERIALS INC·Filed 2002·Granted May 17, 2005·37 cites·35 claims
- 0787US6583065B1Sidewall polymer forming gas additives for etching processesAPPLIED MATERIALS INC·Filed 1999·Granted Jun 24, 2003·105 cites·13 claims
- 0886US6984585B2Method for removal of residue from a magneto-resistive random access memory (MRAM) film stack using a sacrificial mask layerAPPLIED MATERIALS INC·Filed 2002·Granted Jan 10, 2006·36 cites·26 claims
- 0985US6767824B2Method of fabricating a gate structure of a field effect transistor using an alpha-carbon maskFiled 2003·Granted Jul 27, 2004·34 cites·22 claims
- 1084US6660127B2Apparatus for plasma etching at a constant etch rateAPPLIED MATERIALS INC·Filed 2002·Granted Dec 9, 2003·26 cites·5 claims
- 1182US6440870B1Method of etching tungsten or tungsten nitride electrode gates in semiconductor structuresAPPLIED MATERIALS INC·Filed 2001·Granted Aug 27, 2002·28 cites·61 claims
- 1281US6855643B2Method for fabricating a gate structureFiled 2002·Granted Feb 15, 2005·27 cites·51 claims
- 1379US6942813B2Method of etching magnetic and ferroelectric materials using a pulsed bias sourceAPPLIED MATERIALS INC·Filed 2003·Granted Sep 13, 2005·21 cites·23 claims
- 1479US6806095B2Method of plasma etching of high-K dielectric materials with high selectivity to underlying layersFiled 2002·Granted Oct 19, 2004·19 cites·17 claims
- 1578US6759286B2Method of fabricating a gate structure of a field effect transistor using a hard maskFiled 2002·Granted Jul 6, 2004·20 cites·42 claims
- 1678US6423644B1Method of etching tungsten or tungsten nitride electrode gates in semiconductor structuresAPPLIED MATERIALS INC·Filed 2000·Granted Jul 23, 2002·25 cites·44 claims
- 1778US6322714B1Process for etching silicon-containing material on substratesAPPLIED MATERIALS INC·Filed 1998·Granted Nov 27, 2001·50 cites·65 claims
- 1877US7320942B2Method for removal of metallic residue after plasma etching of a metal layerAPPLIED MATERIALS INC·Filed 2002·Granted Jan 22, 2008·19 cites·19 claims
- 1974US6902681B2Method for plasma etching of high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2002·Granted Jun 7, 2005·18 cites·12 claims
- 2074US6579806B2Method of etching tungsten or tungsten nitride in semiconductor structuresAPPLIED MATERIALS INC·Filed 2002·Granted Jun 17, 2003·16 cites·18 claims
- 2172US7105361B2Method of etching a magnetic materialAPPLIED MATERIALS INC·Filed 2003·Granted Sep 12, 2006·14 cites·22 claims
- 2272US6503845B1Method of etching a tantalum nitride layer in a high density plasmaAPPLIED MATERIALS INC·Filed 2001·Granted Jan 7, 2003·14 cites·25 claims
- 2372US6399507B1Stable plasma process for etching of filmsAPPLIED MATERIALS INC·Filed 1999·Granted Jun 4, 2002·34 cites·23 claims
- 2471US7094704B2Method of plasma etching of high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2002·Granted Aug 22, 2006·11 cites·42 claims
- 2570US6132631AAnisotropic silicon nitride etching for shallow trench isolation in an high density plasma systemAPPLIED MATERIALS INC·Filed 1997·Granted Oct 17, 2000·35 cites·7 claims
- 2665US6943039B2Method of etching ferroelectric layersAPPLIED MATERIALS INC·Filed 2003·Granted Sep 13, 2005·9 cites·78 claims
- 2764US7838434B2Method of plasma etching of high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2006·Granted Nov 23, 2010·1 cites·18 claims
- 2863US7217665B2Method of plasma etching high-K dielectric materials with high selectivity to underlying layersAPPLIED MATERIALS INC·Filed 2002·Granted May 15, 2007·8 cites·31 claims
- 2963US6368978B1Hydrogen-free method of plasma etching indium tin oxideAPPLIED MATERIALS INC·Filed 1999·Granted Apr 9, 2002·26 cites·12 claims
- 3058US6638874B2Methods used in fabricating gates in integrated circuit device structuresAPPLIED MATERIALS INC·Filed 2002·Granted Oct 28, 2003·7 cites·21 claims
- 3157US6642151B2Techniques for plasma etching silicon-germaniumAPPLIED MATERIALS INC·Filed 2002·Granted Nov 4, 2003·5 cites·32 claims
- 3243US2004173572A1Method of plasma etching of high-K dielectric materials with high selectivity to underlying layersAPPLIED MATERIALS INC·Filed 2004·Application pending·0 cites
- 3340US2004242005A1Method of etching metal layersFiled 2004·Application pending·0 cites
- 3439US2003181056A1Method of etching a magnetic material film stack using a hard maskAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 3538US2004209468A1Method for fabricating a gate structure of a field effect transistorAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3638US2005176191A1Method for fabricating a notched gate structure of a field effect transistorAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3738US2004132311A1Method of etching high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3838US2004026369A1Method of etching magnetic materialsFiled 2002·Application pending·0 cites
- 3938US2006060565A9Method of etching metals with high selectivity to hafnium-based dielectric materialsAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 4038US2003109138A1Method of etching tantalumAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 4137US6415198B1Plasma etching of silicon using a chlorine chemistry augmented with sulfur dioxideAPPLIED MATERIALS INC·Filed 1999·Granted Jul 2, 2002·5 cites·23 claims
- 4237US6069086ANon-HBr shallow trench isolation etch processAPPLIED MATERIALS INC·Filed 1998·Granted May 30, 2000·9 cites·3 claims
- 4337US2004077178A1Method for laterally etching a semiconductor structureAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4437US2003222296A1Method of forming a capacitor using a high K dielectric materialAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4537US2003089457A1Apparatus for controlling a thermal conductivity profile for a pedestal in a semiconductor wafer processing chamberAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 4637US2003153195A1Method and apparatus for providing modulated bias power to a plasma etch reactorAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4737US2004007561A1Method for plasma etching of high-K dielectric materialsAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4837US2004097077A1Method and apparatus for etching a deep trenchAPPLIED MATERIALS INC·Filed 2002·Application pending·0 cites
- 4937US2002132488A1Method of etching tantalumAPPLIED MATERIALS INC·Filed 2001·Application pending·0 cites
- 5037US2004171272A1Method of etching metallic materials to form a tapered profileAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →