Inventor · disambiguated record
Pavel Poplevine
Also filed as: POPLEVINE PAVEL · POPLEVINE PAVEL B
46 granted patents·1 pending application·772 citations·filing 1995–2011
98Inventor score
Top patents by PatentIndex Score
47 records- 0193US7167392B1Non-volatile memory cell with improved programming techniqueNAT SEMICONDUCTOR CORP·Filed 2005·Granted Jan 23, 2007·35 cites·6 claims
- 0293US6711051B1Static RAM architecture with bit line partitioningNAT SEMICONDUCTOR CORP·Filed 2002·Granted Mar 23, 2004·82 cites·18 claims
- 0391US7239558B1Method of hot electron injection programming of a non-volatile memory (NVM) cell array in a single cycleNAT SEMICONDUCTOR CORP·Filed 2005·Granted Jul 3, 2007·28 cites·14 claims
- 0488US8284600B15-transistor non-volatile memory cellPOPLEVINE PAVEL·Filed 2010·Granted Oct 9, 2012·17 cites·7 claims
- 0585US7164606B1Reverse fowler-nordheim tunneling programming for non-volatile memory cellNAT SEMICONDUCTOR CORP·Filed 2005·Granted Jan 16, 2007·17 cites·2 claims
- 0685US6992927B1Nonvolatile memory cellNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jan 31, 2006·38 cites·17 claims
- 0785US6420217B1Method of an apparatus for programming an integrated fuse element to high resistance in low voltage technologyNAT SEMICONDUCTOR CORP·Filed 2000·Granted Jul 16, 2002·33 cites·10 claims
- 0883US6563730B1Low power static RAM architectureNAT SEMICONDUCTOR CORP·Filed 2002·Granted May 13, 2003·35 cites·14 claims
- 0982US7656698B1Non-volatile memory cell with improved programming technique with decoupling pass gates and equalize transistorsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Feb 2, 2010·14 cites·9 claims
- 1081US6985386B1Programming method for nonvolatile memory cellNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jan 10, 2006·30 cites·5 claims
- 1179US8363469B1All-NMOS 4-transistor non-volatile memory cellNAT SEMICONDUCTOR CORP·Filed 2010·Granted Jan 29, 2013·6 cites·5 claims
- 1277US6184557B1I/O circuit that utilizes a pair of well structures as resistors to delay an ESD event and as diodes for ESD protectionNAT SEMICONDUCTOR CORP·Filed 1999·Granted Feb 6, 2001·40 cites·14 claims
- 1375US7558969B1Anti-pirate circuit for protection against commercial integrated circuit piratesNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jul 7, 2009·21 cites·20 claims
- 1475US6384398B1CMOS compatible pixel cell that utilizes a gated diode to reset the cellNAT SEMICONDUCTOR CORP·Filed 2001·Granted May 7, 2002·17 cites·4 claims
- 1574US6525397B1Extended drain MOSFET for programming an integrated fuse element to high resistance in low voltage process technologyNAT SEMICONDUCTOR CORP·Filed 1999·Granted Feb 25, 2003·38 cites·15 claims
- 1673US6262460B1Long channel MOS transistor that utilizes a schottky diode to increase the threshold voltage of the transistorNAT SEMICONDUCTOR CORP·Filed 2000·Granted Jul 17, 2001·18 cites·15 claims
- 1772US6169310B1Electrostatic discharge protection deviceNAT SEMICONDUCTOR CORP·Filed 1998·Granted Jan 2, 2001·34 cites·6 claims
- 1872US6122204ASense amplifier having a bias circuit with a reduced sizeNAT SEMICONDUCTOR CORP·Filed 1999·Granted Sep 19, 2000·26 cites·12 claims
- 1971US5721545AMethods and apparatus for serial-to-parallel and parallel-to-serial conversionFiled 1995·Granted Feb 24, 1998·34 cites·62 claims
- 2070US7042763B1Programming method for nonvolatile memory cellNAT SEMICONDUCTOR CORP·Filed 2004·Granted May 9, 2006·18 cites·4 claims
- 2164US6618282B1High density ROM architecture with inversion of programmingNAT SEMICONDUCTOR CORP·Filed 2002·Granted Sep 9, 2003·14 cites·17 claims
- 2263US7206959B1Closed-loop, supply-adjusted ROM memory circuitNAT SEMICONDUCTOR CORP·Filed 2003·Granted Apr 17, 2007·11 cites·57 claims
- 2361US7453726B1Non-volatile memory cell with improved programming technique and densityNAT SEMICONDUCTOR CORP·Filed 2007·Granted Nov 18, 2008·4 cites·5 claims
- 2460US6031275AAntifuse with a silicide layer overlying a diffusion regionNAT SEMICONDUCTOR CORP·Filed 1998·Granted Feb 29, 2000·25 cites·20 claims
- 2559US7020027B1Programming method for nonvolatile memory cellNAT SEMICONDUCTOR CORP·Filed 2004·Granted Mar 28, 2006·10 cites·5 claims
- 2658US7126866B1Low power ROM architectureNAT SEMICONDUCTOR CORP·Filed 2002·Granted Oct 24, 2006·10 cites·18 claims
- 2758US7069461B1Closed-loop, supply-adjusted RAM memory circuitNAT SEMICONDUCTOR CORP·Filed 2003·Granted Jun 27, 2006·11 cites·29 claims
- 2857US6642587B1High density ROM architectureNAT SEMICONDUCTOR CORP·Filed 2002·Granted Nov 4, 2003·10 cites·15 claims
- 2956US6285590B1Low power consumption semiconductor ROM, EPROM, EEPROM and like circuitNAT SEMICONDUCTOR CORP·Filed 2000·Granted Sep 4, 2001·10 cites·28 claims
- 3055USRE44130EAnti-pirate circuit for protection against commercial integrated circuit piratesLUCERO ELROY M·Filed 2011·Granted Apr 2, 2013·1 cites·46 claims
- 3155US6380571B1CMOS compatible pixel cell that utilizes a gated diode to reset the cellNAT SEMICONDUCTOR CORP·Filed 1998·Granted Apr 30, 2002·16 cites·30 claims
- 3254US8159877B2Method of directly reading output voltage to determine data stored in a non-volatile memory cellPOPLEVINE PAVEL·Filed 2010·Granted Apr 17, 2012·2 cites·3 claims
- 3350US7286383B1Bit line sharing and word line load reduction for low AC power SRAM architectureNAT SEMICONDUCTOR CORP·Filed 2002·Granted Oct 23, 2007·6 cites·3 claims
- 3447US6218688B1Schottky diode with reduced sizeNAT SEMICONDUCTOR CORP·Filed 1999·Granted Apr 17, 2001·9 cites·13 claims
- 3547US6078094AStarter current source device with automatic shut-down capability and method for its manufactureNAT SEMICONDUCTOR CORP·Filed 1998·Granted Jun 20, 2000·10 cites·9 claims
- 3646US6229739B1Sense amplifier having a bias circuit with a reduced sizeNAT SEMICONDUCTOR CORP·Filed 2000·Granted May 8, 2001·4 cites·3 claims
- 3746US6078211ASubstrate biasing circuit that utilizes a gated diode to set the bias on the substrateNAT SEMICONDUCTOR CORP·Filed 1998·Granted Jun 20, 2000·9 cites·18 claims
- 3844US6218866B1Semiconductor device for prevention of a floating gate condition on an input node of a MOS logic circuit and a method for its manufactureNAT SEMICONDUCTOR CORP·Filed 1999·Granted Apr 17, 2001·8 cites·15 claims
- 3943US6621736B1Method of programming a splity-gate flash memory cell with a positive inhibiting word line voltageNAT SEMICONDUCTOR CORP·Filed 2002·Granted Sep 16, 2003·4 cites·14 claims
- 4040US7602641B2Method of making a non-volatile memory (NVM) cell structure and program biasing techniques for the NVM cell structureNAT SEMICONDUCTOR CORP·Filed 2008·Granted Oct 13, 2009·0 cites·6 claims
- 4139US7061792B1Low AC power SRAM architectureNAT SEMICONDUCTOR CORP·Filed 2002·Granted Jun 13, 2006·2 cites·10 claims
- 4239US5978269AApparatus and method for lowering the potential barrier across the source-to-well junction during the programming of non-volatile memory cellsNAT SEMICONDUCTOR CORP·Filed 1998·Granted Nov 2, 1999·6 cites·12 claims
- 4338US5982676ALow voltage generator for bitlinesST MICROELECTRONICS INC·Filed 1998·Granted Nov 9, 1999·5 cites·22 claims
- 4437US6380054B1Schottky diode with reduced sizeNAT SEMICONDUCTOR CORP·Filed 2000·Granted Apr 30, 2002·0 cites·6 claims
- 4536US6049202AReference current generator with gated-diodesNAT SEMICONDUCTOR CORP·Filed 1998·Granted Apr 11, 2000·4 cites·24 claims
- 4634US8213227B24-transistor non-volatile memory cell with PMOS-NMOS-PMOS-NMOS structurePOPLEVINE PAVEL·Filed 2010·Granted Jul 3, 2012·0 cites·7 claims
- 4730US2012014183A13 transistor (n/p/n) non-volatile memory cell without program disturbPOPLEVINE PAVEL·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →