Inventor · disambiguated record
Paul Saunier
Also filed as: SAUNIER III PAUL · SAUNIER PAUL · SAUNIER PAUL A
24 granted patents·12 pending applications·350 citations·filing 1984–2024
96Inventor score
Files withAKASH SYSTEMS INC12TEXAS INSTRUMENTS INC9TRIQUINT SEMICONDUCTOR INC7SAUNIER PAUL5LOCKHEED CORP1
Top patents by PatentIndex Score
36 records- 0191US9054167B2High electron mobility transistor structure and methodTRIQUINT SEMICONDUCTOR INC·Filed 2013·Granted Jun 9, 2015·10 cites·10 claims
- 0289US9202905B1Digital alloy layer in a III-nitrade based heterojunction field effect transistorTRIQUINT SEMICONDUCTOR INC·Filed 2014·Granted Dec 1, 2015·11 cites·20 claims
- 0387US10374553B2Microwave transmitter with improved information throughputAKASH SYSTEMS INC·Filed 2017·Granted Aug 6, 2019·4 cites·20 claims
- 0487US8350295B1Device structure including high-thermal-conductivity substrateTRIQUINT SEMICONDUCTOR INC·Filed 2008·Granted Jan 8, 2013·14 cites·10 claims
- 0587US7936210B2Gallium nitride traveling wave structuresLOCKHEED CORP·Filed 2007·Granted May 3, 2011·17 cites·19 claims
- 0684US5521406AIntegrated circuit with improved thermal impedanceTEXAS INSTRUMENTS INC·Filed 1994·Granted May 28, 1996·50 cites·15 claims
- 0783US5300795AGaAs FET with resistive AlGaAsTEXAS INSTRUMENTS INC·Filed 1992·Granted Apr 5, 1994·51 cites·14 claims
- 0880US10985082B2Apparatus for efficient high-frequency communicationsAKASH SYSTEMS INC·Filed 2020·Granted Apr 20, 2021·1 cites·25 claims
- 0980US8143654B1Monolithic microwave integrated circuit with diamond layerSAUNIER PAUL·Filed 2008·Granted Mar 27, 2012·11 cites·12 claims
- 1078US10332820B2Satellite communication transmitter with improved thermal managementAKASH SYSTEMS INC·Filed 2017·Granted Jun 25, 2019·2 cites·20 claims
- 1177US4599790AProcess for forming a T-shaped gate structureTEXAS INSTRUMENTS INC·Filed 1985·Granted Jul 15, 1986·50 cites·21 claims
- 1277US2025309037A1Apparatus for efficient high-frequency communicationsAKASH SYSTEMS INC·Filed 2024·Application pending·0 cites
- 1373US10811335B2Satellite communication transmitter with improved thermal managementAKASH SYSTEMS INC·Filed 2019·Granted Oct 20, 2020·1 cites·15 claims
- 1473US10804853B2Microwave transmitter with improved information throughputAKASH SYSTEMS INC·Filed 2019·Granted Oct 13, 2020·1 cites·22 claims
- 1573US5612257AMethod of making flip-chip microwave integrated circuitTEXAS INSTRUMENTS INC·Filed 1995·Granted Mar 18, 1997·29 cites·5 claims
- 1672US5717231AAntenna having elements with improved thermal impedanceTEXAS INSTRUMENTS INC·Filed 1996·Granted Feb 10, 1998·32 cites·22 claims
- 1769US11594466B2Wireless transmitter with improved thermal managementAKASH SYSTEMS INC·Filed 2020·Granted Feb 28, 2023·0 cites·18 claims
- 1869US4558337AMultiple high electron mobility transistor structures without inverted heterojunctionsTEXAS INSTRUMENTS INC·Filed 1984·Granted Dec 10, 1985·21 cites·12 claims
- 1966US11495515B2Wireless communication system with improved thermal performanceAKASH SYSTEMS INC·Filed 2020·Granted Nov 8, 2022·0 cites·22 claims
- 2063US2021234511A1Microwave transmitter with improved information throughputAKASH SYSTEMS INC·Filed 2020·Application pending·0 cites
- 2161US9029914B2Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compoundTRIQUINT SEMICONDUCTOR INC·Filed 2012·Granted May 12, 2015·1 cites·11 claims
- 2261US8975664B2Group III-nitride transistor using a regrown structureSAUNIER PAUL A·Filed 2012·Granted Mar 10, 2015·2 cites·17 claims
- 2361US6697412B2Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafersTRIQUINT SEMICONDUCTOR INC·Filed 2001·Granted Feb 24, 2004·11 cites·25 claims
- 2458US5254492AMethod of fabricating an integrated circuit for providing low-noise and high-power microwave operationTEXAS INSTRUMENTS INC·Filed 1992·Granted Oct 19, 1993·14 cites·9 claims
- 2556US2024170362A1Devices having and methods of forming thermally conductive substratesAKASH SYSTEMS INC·Filed 2023·Application pending·0 cites
- 2651US2023411314A1High-efficiency structures for improved wireless communicationsAKASH SYSTEMS INC·Filed 2022·Application pending·0 cites
- 2751US2022189846A1Material growth on wide-bandgap semiconductor materialsAKASH SYSTEMS INC·Filed 2021·Application pending·0 cites
- 2848US6215136B1Integrated circuit capable of low-noise and high-power microwave operationTEXAS INSTRUMENTS INC·Filed 1993·Granted Apr 10, 2001·9 cites·10 claims
- 2947US5681766AMethod of making integrated circuit capable of low-noise and high-power microwave operationTEXAS INSTRUMENTS INC·Filed 1995·Granted Oct 28, 1997·8 cites·9 claims
- 3044US2013105817A1High electron mobility transistor structure and methodSAUNIER PAUL·Filed 2011·Application pending·0 cites
- 3142US2013119404A1Device structure including high-thermal-conductivity substrateTRIQUINT SEMICONDUCTOR INC·Filed 2013·Application pending·0 cites
- 3239US2013060797A1Data transformation method and systemSAUNIER PAUL·Filed 2012·Application pending·0 cites
- 3335US2013320349A1In-situ barrier oxidation techniques and configurationsSAUNIER PAUL·Filed 2012·Application pending·0 cites
- 3435US2011241020A1High electron mobility transistor with recessed barrier layerTRIQUINT SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 3533US2013099284A1Group iii-nitride metal-insulator-semiconductor heterostructure field-effect transistorsTSERNG HUA-QUEN·Filed 2011·Application pending·0 cites
- 3632US2012153356A1High electron mobility transistor with indium gallium nitride layerSAUNIER PAUL·Filed 2010·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →