Microwave transmitter with improved information throughput

Abstract

An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. The substrate comprises a first layer of synthetic diamond characterized by an average value of thermal conductivity.An RF amplifier module comprises a package having a package base, at least one RF amplifier chip attached to the package base, and an RF power combiner chip attached to the package base. The RF amplifier chip comprises a substrate and at least one transistor disposed on an epilayer overlying the substrate. A first layer of synthetic diamond is at least partially disposed on top of the electronic device

1 . (canceled) 
     
     
         2 . A radiofrequency (RF) amplifier module comprising:
 a package base comprising synthetic diamond,   at least one RF amplifier chip in thermal contact with said package base, said RF amplifier chip comprising a transistor comprising a material layer and disposed on a substrate comprising a material having an average value of thermal conductivity of at least about 1000 W/mK, and   one or more ports operably coupled to said RF amplifier chip.   
     
     
         3 . The RF amplifier module of  claim 2 , wherein said substrate has a thickness up to about  600  micrometers. 
     
     
         4 . The RF amplifier module of  claim 2 , wherein said material layer comprises a semiconductor material. 
     
     
         5 . The RF amplifier module of  claim 4 , wherein said semiconductor material comprises a Group III-V material. 
     
     
         6 . The RF amplifier module of  claim 5 , wherein said semiconductor material comprises Gallium and Nitrogen. 
     
     
         7 . The RF amplifier module of  claim 2 , wherein said transistor is a high-electron mobility transistor. 
     
     
         8 . The RF amplifier module of  claim 2 , wherein said RF amplifier chip comprises a monolithically integrated microwave circuit (MIMIC). 
     
     
         9 . The RF amplifier module of  claim 2 , wherein said material layer comprises a two-dimensional electron gas layer. 
     
     
         10 . The RF amplifier module of  claim 2 , wherein said transistor comprises a plurality of transistor gates, wherein an average separation between said gates in the direction perpendicular to said gates is less than 100 μm. 
     
     
         11 . The RF amplifier module of  claim 2 , wherein the RF amplifier module is configured to generate an output power greater than several tens of Watts. 
     
     
         12 . The RF amplifier module of  claim 2 , wherein the RF amplifier module is configured to generate a signal for transmission at a frequency within an X-band or a higher frequency band. 
     
     
         13 . The RF amplifier module of  claim 2 , wherein said one or more ports comprises at least one port that is configured to operably couple to at least one RF power combiner. 
     
     
         14 . A method of generating a radiofrequency (RF) amplifier module, comprising:
 providing a package base comprising synthetic diamond; and   providing at least one RF amplifier chip in thermal contact with said package base, said RF amplifier chip comprising a transistor comprising a material layer and disposed on a substrate comprising a material having an average value of thermal conductivity of at least about 1000 W/mK;   wherein one or more ports are coupled to said RF amplifier chip.   
     
     
         15 . The method of  claim 14 , wherein said substrate has a thickness up to about 600 micrometers. 
     
     
         16 . The method of  claim 14 , wherein said material layer comprises a semiconductor material. 
     
     
         17 . The method of  claim 16 , wherein said semiconductor material comprises a Group III-V material. 
     
     
         18 . The method of  claim 14 , wherein said transistor is a high-electron mobility transistor. 
     
     
         19 . The method of  claim 14 , wherein said transistor is a monolithically integrated microwave circuit (MMIC). 
     
     
         20 . The method of  claim 14 , further comprising assembling the RF amplifier module within a housing of an RF transmitter. 
     
     
         21 . The method of  claim 14 , further comprising using the RF amplifier module to output RF power at greater than several tens of Watts. 
     
     
         22 . The method of  claim 14 , further comprising using the RF amplifier module to output an RF signal at a frequency within an X-band or a higher frequency band. 
     
     
         23 . The method of  claim 14 , wherein said one or more ports comprises at least one port that is configured to operably couple to at least one RF power combiner.