Inventor · disambiguated record
Pei-Yu Chou
Also filed as: CHOU PEI-YU
55 granted patents·31 pending applications·193 citations·filing 2004–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD38UNITED MICROELECTRONICS CORP24CHOU PEI-YU9CHANG CHUNG-FU2CHANG FENG-YI2
Top patents by PatentIndex Score
86 records- 0197US11289417B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 29, 2022·5 cites·14 claims
- 0296US10153351B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 11, 2018·14 cites·19 claims
- 0395US11901409B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·17 claims
- 0494US12046475B2Surface oxidation control of metal gates using capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 23, 2024·2 cites·20 claims
- 0594US11164948B2Field-effect transistor and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 2, 2021·6 cites·20 claims
- 0693US11894435B2Contact plug structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 6, 2024·2 cites·20 claims
- 0791US8310012B2Semiconductor device having metal gate and manufacturing method thereofHWANG GUANG-YAW·Filed 2010·Granted Nov 13, 2012·16 cites·17 claims
- 0890US7544623B2Method for fabricating a contact holeUNITED MICROELECTRONICS CORP·Filed 2006·Granted Jun 9, 2009·21 cites·31 claims
- 0988US7799511B2Method of forming a contact holeUNITED MICROELECTRONICS CORP·Filed 2007·Granted Sep 21, 2010·10 cites·11 claims
- 1088US7517766B2Method of removing a spacer, method of manufacturing a metal-oxide-semiconductor transistor device, and metal-oxide-semiconductor transistor deviceUNITED MICROELECTRONICS CORP·Filed 2006·Granted Apr 14, 2009·12 cites·14 claims
- 1188US2025366145A1Semiconductor devices having silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1286US9502530B2Method of manufacturing semiconductor devicesUNITED MICROELECTRONICS CORP·Filed 2015·Granted Nov 22, 2016·4 cites·6 claims
- 1386US7432194B2Etching method and method for forming contact openingUNITED MICROELECTRONICS CORP·Filed 2005·Granted Oct 7, 2008·9 cites·5 claims
- 1486US2025344437A1Contact plug structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1585US12368098B2Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 22, 2025·0 cites·20 claims
- 1685US8574990B2Method of manufacturing semiconductor device having metal gateLIAO PO-JUI·Filed 2011·Granted Nov 5, 2013·9 cites·20 claims
- 1785US7365009B2Structure of metal interconnect and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Apr 29, 2008·12 cites·14 claims
- 1885US2025309103A1Methods of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1984US12243940B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 2084US11652106B2Semiconductor device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 16, 2023·1 cites·20 claims
- 2183US7319067B2Method of simultaneously controlling ADI-AEI CD differences of openings having different sizes and etching process utilizing the same methodUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jan 15, 2008·12 cites·25 claims
- 2281US12293916B2Surface oxidation control of metal gates using capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 6, 2025·0 cites·20 claims
- 2381US10714586B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 14, 2020·2 cites·16 claims
- 2481US8168374B2Method of forming a contact holeCHOU PEI-YU·Filed 2010·Granted May 1, 2012·4 cites·9 claims
- 2580US12310070B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 20, 2025·0 cites·20 claims
- 2680US8772120B2Semiconductor processCHANG CHUNG-FU·Filed 2012·Granted Jul 8, 2014·5 cites·19 claims
- 2780US2025248075A1Methods of forming air spacers in semicondutor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2880US2024379806A1Semiconductor devices having silicide layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2980US2024387179A1Surface oxidation control of metal gates using capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3080US2025357190A1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3180US2025351505A1Sin capping on metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3279US12477807B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 3379US11227950B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·1 cites·20 claims
- 3479US10763328B2Epitaxial semiconductor material grown with enhanced local isotropyGLOBALFOUNDRIES INC·Filed 2018·Granted Sep 1, 2020·4 cites·16 claims
- 3579US7319074B2Method of defining polysilicon patternsUNITED MICROELECTRONICS CORP·Filed 2005·Granted Jan 15, 2008·6 cites·17 claims
- 3679US2025349720A1Interconnection structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3778US11682729B2Methods of forming air spacers in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 20, 2023·0 cites·20 claims
- 3878US2024387551A1Semiconductor device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3978US2025344462A1Semiconductor Device Comprising First Etch Stop Layer Over First Conductive Feature Over Source/Drain RegionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4076US12142608B2Semiconductor device and method for making the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 12, 2024·0 cites·20 claims
- 4176US11973027B2Semiconductor device and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 30, 2024·0 cites·14 claims
- 4276US8753902B1Method of controlling etching process for forming epitaxial structureUNITED MICROELECTRONICS CORP·Filed 2013·Granted Jun 17, 2014·3 cites·13 claims
- 4376US2025311281A1Dielectric layers for semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4475US8236702B2Method of fabricating openings and contact holesCHANG FENG-YI·Filed 2008·Granted Aug 7, 2012·6 cites·10 claims
- 4575US2023387228A1Contact plug structure of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4671US7524742B2Structure of metal interconnect and fabrication method thereofUNITED MICROELECTRONICS CORP·Filed 2007·Granted Apr 28, 2009·4 cites·7 claims
- 4771US2024304679A1Selective sin capping on metal gate for metal oxidation preventionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4869US12453144B2Semiconductor device comprising first etch stop layer over first conductive feature over source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 21, 2025·0 cites·20 claims
- 4969US11569362B2Semiconductor device and a method for fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 31, 2023·0 cites·20 claims
- 5069US7615434B2CMOS device and fabricating method thereofUNITED MICROELECTRONICS CORP·Filed 2006·Granted Nov 10, 2009·4 cites·10 claims
Showing the top 50 of 86 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →