Inventor · disambiguated record
Peter Wai-Man Lee
Also filed as: LEE PETER · LEE PETER W · LEE PETER WAI MAN · XIA LI-QUN
29 granted patents·6 pending applications·1,566 citations·filing 1990–2016
98Inventor score
Top patents by PatentIndex Score
35 records- 0197US6374770B1Apparatus for improving film stability of halogen-doped silicon oxide filmsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 23, 2002·184 cites·24 claims
- 0296US6486082B1CVD plasma assisted lower dielectric constant sicoh filmAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·80 cites·30 claims
- 0395US6709715B1Plasma enhanced chemical vapor deposition of copolymer of parylene N and comonomers with various double bondsAPPLIED MATERIALS INC·Filed 1999·Granted Mar 23, 2004·109 cites·5 claims
- 0495US5792269AGas distribution for CVD systemsAPPLIED MATERIALS INC·Filed 1995·Granted Aug 11, 1998·164 cites·14 claims
- 0594US6086952AChemical vapor deposition of a copolymer of p-xylylene and a multivinyl silicon/oxygen comonomerAPPLIED MATERIALS INC·Filed 1998·Granted Jul 11, 2000·93 cites·4 claims
- 0694US5314845ATwo step process for forming void-free oxide layer over stepped surface of semiconductor waferAPPLIED MATERIALS INC·Filed 1990·Granted May 24, 1994·122 cites·24 claims
- 0793US7745328B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2008·Granted Jun 29, 2010·12 cites·5 claims
- 0892US7030041B2Adhesion improvement for low k dielectricsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 18, 2006·45 cites·20 claims
- 0991US7465659B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2006·Granted Dec 16, 2008·8 cites·12 claims
- 1091US5958510AMethod and apparatus for forming a thin polymer layer on an integrated circuit structureAPPLIED MATERIALS INC·Filed 1996·Granted Sep 28, 1999·153 cites·43 claims
- 1190US7024105B2Substrate heater assemblyAPPLIED MATERIALS INC·Filed 2003·Granted Apr 4, 2006·56 cites·23 claims
- 1289US5166101AMethod for forming a boron phosphorus silicate glass composite layer on a semiconductor waferAPPLIED MATERIALS INC·Filed 1991·Granted Nov 24, 1992·73 cites·17 claims
- 1388US6838393B2Method for producing semiconductor including forming a layer containing at least silicon carbide and forming a second layer containing at least silicon oxygen carbideAPPLIED MATERIALS INC·Filed 2002·Granted Jan 4, 2005·24 cites·27 claims
- 1485US7008484B2Method and apparatus for deposition of low dielectric constant materialsAPPLIED MATERIALS INC·Filed 2002·Granted Mar 7, 2006·19 cites·15 claims
- 1585US6103601AMethod and apparatus for improving film stability of halogen-doped silicon oxide filmsAPPLIED MATERIALS INC·Filed 1999·Granted Aug 15, 2000·64 cites·27 claims
- 1683US6149987AMethod for depositing low dielectric constant oxide filmsAPPLIED MATERIALS INC·Filed 1998·Granted Nov 21, 2000·61 cites·14 claims
- 1781US5354387ABoron phosphorus silicate glass composite layer on semiconductor waferAPPLIED MATERIALS INC·Filed 1992·Granted Oct 11, 1994·44 cites·19 claims
- 1880US6121164AMethod for forming low compressive stress fluorinated ozone/TEOS oxide filmAPPLIED MATERIALS INC·Filed 1997·Granted Sep 19, 2000·59 cites·13 claims
- 1979US6319324B1Method and apparatus for elimination of TEOS/ozone silicon oxide surface sensitivityAPPLIED MATERIALS INC·Filed 2000·Granted Nov 20, 2001·25 cites·14 claims
- 2079US6107184ANano-porous copolymer films having low dielectric constantsAPPLIED MATERIALS INC·Filed 1998·Granted Aug 22, 2000·52 cites·11 claims
- 2176US6663713B1Method and apparatus for forming a thin polymer layer on an integrated circuit structureAPPLIED MATERIALS INC·Filed 1996·Granted Dec 16, 2003·51 cites·5 claims
- 2275US7153787B2CVD plasma assisted lower dielectric constant SICOH filmAPPLIED MATERIALS INC·Filed 2005·Granted Dec 26, 2006·3 cites·20 claims
- 2372US7459404B2Adhesion improvement for low k dielectricsAPPLIED MATERIALS INC·Filed 2006·Granted Dec 2, 2008·2 cites·16 claims
- 2471US7157384B2Low dielectric (low k) barrier films with oxygen doping by plasma-enhanced chemical vapor deposition (PECVD)APPLIED MATERIALS INC·Filed 2004·Granted Jan 2, 2007·7 cites·20 claims
- 2569US6149974AMethod for elimination of TEOS/ozone silicon oxide surface sensitivityAPPLIED MATERIALS INC·Filed 1997·Granted Nov 21, 2000·37 cites·14 claims
- 2664US6943127B2CVD plasma assisted lower dielectric constant SICOH filmAPPLIED MATERIALS INC·Filed 2002·Granted Sep 13, 2005·6 cites·22 claims
- 2763US6911403B2Methods of reducing plasma-induced damage for advanced plasma CVD dielectricsAPPLIED MATERIALS INC·Filed 2003·Granted Jun 28, 2005·5 cites·31 claims
- 2857US6523494B1Apparatus for depositing low dielectric constant oxide filmAPPLIED MATERIALS INC·Filed 2000·Granted Feb 25, 2003·5 cites·17 claims
- 2953US2006144334A1Method and apparatus for deposition of low dielectric constant materialsAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3042US2014242363A1Durable, Germicide-Free and Antibacterial CoatingNANO & ADVANCED MATERIALS INST LTD·Filed 2013·Application pending·0 cites
- 3138US2004161536A1Method for depositing a low-k material having a controlled thickness rangeAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3237US2003211244A1Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectricAPPLIED MATERIALS INC·Filed 2003·Application pending·0 cites
- 3331US6153540AMethod of forming phosphosilicate glass having a high wet-etch rateAPPLIED MATERIALS INC·Filed 1998·Granted Nov 28, 2000·3 cites·14 claims
- 3431US2016223744A1Long-period grating device and tunable gain flattening filter having sameNANO & ADVANCED MATERIALS INST LTD·Filed 2016·Application pending·0 cites
- 3529US2015353996A1Reusable Long Period Microfiber Grating for detection of DNA HybridizationNANO & ADVANCED MATERIALS INST LTD·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Peter Wai-Man Lee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →