Inventor · disambiguated record
Peng-Soon Lim
Also filed as: LIM PENG-SOON
50 granted patents·6 pending applications·337 citations·filing 2004–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD30NAT SEMICONDUCTOR CORP8LIM PENG-SOON6TAIWAN SEMICONDUCTOR MFG6LI FELIX C2
Top patents by PatentIndex Score
56 records- 0198US11018232B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·5 cites·20 claims
- 0297US8278173B2Method of fabricating gate structuresLIM PENG-SOON·Filed 2010·Granted Oct 2, 2012·34 cites·14 claims
- 0395US12107134B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 1, 2024·1 cites·20 claims
- 0495US11380774B2Etching back and selective deposition of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 5, 2022·9 cites·20 claims
- 0595US10879370B2Etching back and selective deposition of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 29, 2020·9 cites·20 claims
- 0694US7871915B2Method for forming metal gates in a gate last processTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 18, 2011·38 cites·15 claims
- 0794US7714418B2Leadframe panelNAT SEMICONDUCTOR CORP·Filed 2007·Granted May 11, 2010·64 cites·20 claims
- 0893US9431505B2Method of making a gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·7 cites·20 claims
- 0992US8575727B2Gate structuresTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 5, 2013·10 cites·14 claims
- 1092US7824990B2Multi-metal-oxide high-K gate dielectricsTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Nov 2, 2010·25 cites·21 claims
- 1191US10707131B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jul 7, 2020·4 cites·20 claims
- 1291US9941373B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 10, 2018·4 cites·20 claims
- 1387US12336269B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jun 17, 2025·0 cites·20 claims
- 1487US9478623B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 25, 2016·7 cites·20 claims
- 1587US9449832B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·3 cites·20 claims
- 1686US7465634B2Method of forming integrated circuit devices having n-MOSFET and p-MOSFET transistors with elevated and silicided source/drain structuresTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Dec 16, 2008·14 cites·20 claims
- 1786US2024395882A1Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1885US9048334B2Metal gate structureLIM PENG-SOON·Filed 2011·Granted Jun 2, 2015·4 cites·13 claims
- 1985US8097934B1Delamination resistant device package having low moisture sensitivityLI FELIX C·Filed 2008·Granted Jan 17, 2012·16 cites·42 claims
- 2085US7763958B1Leadframe panel for power packagesNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jul 27, 2010·15 cites·20 claims
- 2184US8030138B1Methods and systems of packaging integrated circuitsNAT SEMICONDUCTOR CORP·Filed 2006·Granted Oct 4, 2011·14 cites·17 claims
- 2284US7838980B1TO263 device package having low moisture sensitivityNAT SEMICONDUCTOR CORP·Filed 2007·Granted Nov 23, 2010·14 cites·12 claims
- 2381US10651283B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 12, 2020·1 cites·20 claims
- 2481US7582954B1Optical leadless leadframe packageNAT SEMICONDUCTOR CORP·Filed 2008·Granted Sep 1, 2009·11 cites·7 claims
- 2579US11915981B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Feb 27, 2024·0 cites·20 claims
- 2678US2025221004A1Finfet having a work function material gradientTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2777US10665685B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 26, 2020·1 cites·20 claims
- 2876US8258587B2Transistor performance with metal gateMASUOKA YURI·Filed 2009·Granted Sep 4, 2012·7 cites·23 claims
- 2976US8193081B2Method and system for metal gate formation with wider metal gate fill marginLIM PENG-SOON·Filed 2009·Granted Jun 5, 2012·6 cites·20 claims
- 3075US11855164B2Semiconductor device and fabrication method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 3174US12283616B2FinFET having a work function material gradientTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 22, 2025·0 cites·20 claims
- 3274US11282933B2FinFET having a work function material gradientTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Mar 22, 2022·1 cites·20 claims
- 3374US11227929B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 18, 2022·0 cites·20 claims
- 3474US2024371973A1Etching back and selective deposition of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3574US2024282627A1Contact Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3673US11348837B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 31, 2022·0 cites·20 claims
- 3770US8779530B2Metal gate structure of a field effect transistorLIM PENG-SOON·Filed 2009·Granted Jul 15, 2014·3 cites·20 claims
- 3869US12068393B2Etching back and selective deposition of metal gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 20, 2024·0 cites·20 claims
- 3968US11984356B2Contact structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 14, 2024·0 cites·20 claims
- 4065US10269912B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·0 cites·20 claims
- 4165US9129953B2Method of making a gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 8, 2015·1 cites·20 claims
- 4265US8736042B2Delamination resistant device package having raised bond surface and mold locking apertureLI FELIX C·Filed 2011·Granted May 27, 2014·2 cites·15 claims
- 4356US9449828B2Method of forming metal gate electrodeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·0 cites·20 claims
- 4456US7470978B2Sawn power package and method of fabricating sameNAT SEMICONDUCTOR CORP·Filed 2007·Granted Dec 30, 2008·1 cites·8 claims
- 4555US2024055260A1Method for manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4654US9196691B2Metal gate electrode of a field effect transistorTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Nov 24, 2015·0 cites·20 claims
- 4753US9887090B2Metal gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 6, 2018·0 cites·20 claims
- 4853US7342297B1Sawn power packageNAT SEMICONDUCTOR CORP·Filed 2004·Granted Mar 11, 2008·6 cites·15 claims
- 4953US2022319932A1Metal gate with pretreatment layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 5052US11489056B2Semiconductor device with multi-threshold gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 1, 2022·0 cites·20 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →