Inventor · disambiguated record
Perry Merrill
Also filed as: MERRILL PERRY · MERRILL PERRY L
13 granted patents·385 citations·filing 1984–2000
94Inventor score
Top patents by PatentIndex Score
13 records- 0187US5661314APower transistor device having ultra deep increased concentrationINT RECTIFIER CORP·Filed 1994·Granted Aug 26, 1997·65 cites·31 claims
- 0286US5654206AAmorphous silicon layer for top surface of semiconductor deviceINT RECTIFIER CORP·Filed 1996·Granted Aug 5, 1997·78 cites·3 claims
- 0382US5859465AHigh voltage power schottky with aluminum barrier metal spaced from first diffused ringINT RECTIFIER CORP·Filed 1996·Granted Jan 12, 1999·55 cites·17 claims
- 0479US5338693AProcess for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFETINT RECTIFIER CORP·Filed 1987·Granted Aug 16, 1994·32 cites·18 claims
- 0578US5592006AGate resistor for IGBTINT RECTIFIER CORP·Filed 1995·Granted Jan 7, 1997·46 cites·51 claims
- 0675US5475252AProcess for manufacture of radiation resistant power MOSFET and radiation resistant power MOSFETINT RECTIFIER CORP·Filed 1994·Granted Dec 12, 1995·33 cites·7 claims
- 0771US6198115B1IGBT with reduced forward voltage drop and reduced switching lossINT RECTIFIER CORP·Filed 2000·Granted Mar 6, 2001·12 cites·15 claims
- 0856US5904510APower transistor device having ultra deep increased concentration regionINT RECTIFIER CORP·Filed 1997·Granted May 18, 1999·15 cites·19 claims
- 0952US5831318ARadhard mosfet with thick gate oxide and deep channel regionINT RECTIFIER CORP·Filed 1996·Granted Nov 3, 1998·14 cites·3 claims
- 1051US6043112AIGBT with reduced forward voltage drop and reduced switching lossINT RECTIFIER CORP·Filed 1997·Granted Mar 28, 2000·14 cites·3 claims
- 1144US4506280ATransistor with improved power dissipation capabilityMOTOROLA INC·Filed 1984·Granted Mar 19, 1985·8 cites·1 claims
- 1237US5523604AAmorphous silicon layer for top surface of semiconductor deviceINT RECTIFIER CORP·Filed 1995·Granted Jun 4, 1996·6 cites·5 claims
- 1335US4783694AIntegrated bipolar-MOS semiconductor device with common collector and drainMOTOROLA INC·Filed 1984·Granted Nov 8, 1988·7 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →