Inventor · disambiguated record
Peter Rabkin
Also filed as: RABKIN PETER
134 granted patents·9 pending applications·2,080 citations·filing 2001–2023
99Inventor score
Files withSANDISK TECHNOLOGIES LLC73SANDISK TECHNOLOGIES INC31HYNIX SEMICONDUCTOR INC9SANDISK 3D LLC9HIGASHITANI MASAAKI4
Top patents by PatentIndex Score
143 records- 0199US11569215B2Three-dimensional memory device with vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jan 31, 2023·19 cites·20 claims
- 0299US11322509B2Three-dimensional memory device including a silicon-germanium source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 3, 2022·13 cites·19 claims
- 0399US11107516B1Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 31, 2021·24 cites·20 claims
- 0499US10923196B1Erase operation in 3D NANDSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Feb 16, 2021·13 cites·19 claims
- 0599US9711229B13D NAND with partial block eraseSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jul 18, 2017·53 cites·19 claims
- 0699US9449985B1Memory cell with high-k charge trapping layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Sep 20, 2016·41 cites·29 claims
- 0799US9425299B1Three-dimensional memory device having a heterostructure quantum well channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Aug 23, 2016·50 cites·22 claims
- 0899US9230980B2Single-semiconductor-layer channel in a memory opening for a three-dimensional non-volatile memory deviceSANDISK TECHNOLOGIES INC·Filed 2014·Granted Jan 5, 2016·50 cites·12 claims
- 0999US8847302B2Vertical NAND device with low capacitance and silicided word linesALSMEIER JOHANN·Filed 2012·Granted Sep 30, 2014·108 cites·12 claims
- 1098US11963352B2Three-dimensional memory device with vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Apr 16, 2024·5 cites·20 claims
- 1198US11721727B2Three-dimensional memory device including a silicon-germanium source contact layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 8, 2023·6 cites·2 claims
- 1298US11676954B2Bonded three-dimensional memory devices with backside source power supply mesh and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Jun 13, 2023·3 cites·20 claims
- 1398US11562975B2Bonded assembly employing metal-semiconductor bonding and metal-metal bonding and methods of forming the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 24, 2023·8 cites·20 claims
- 1498US11404123B1Non-volatile memory with multiple wells for word line switch transistorsSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Aug 2, 2022·6 cites·20 claims
- 1598US11348901B1Interfacial tilt-resistant bonded assembly and methods for forming the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted May 31, 2022·8 cites·20 claims
- 1698US10319680B1Metal contact via structure surrounded by an air gap and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2018·Granted Jun 11, 2019·35 cites·20 claims
- 1798US9721963B1Three-dimensional memory device having a transition metal dichalcogenide channelSANDISK TECHNOLOGIES INC·Filed 2016·Granted Aug 1, 2017·50 cites·31 claims
- 1898US9634097B23D NAND with oxide semiconductor channelSANDISK TECHNOLOGIES INC·Filed 2014·Granted Apr 25, 2017·55 cites·25 claims
- 1998US9530790B1Three-dimensional memory device containing CMOS devices over memory stack structuresSANDISK TECHNOLOGIES INC·Filed 2015·Granted Dec 27, 2016·159 cites·28 claims
- 2098US9177966B1Three dimensional NAND devices with air gap or low-k coreSANDISK TECHNOLOGIES INC·Filed 2014·Granted Nov 3, 2015·92 cites·37 claims
- 2198US8933502B23D non-volatile memory with metal silicide interconnectHIGASHITANI MASAAKI·Filed 2011·Granted Jan 13, 2015·50 cites·27 claims
- 2297US10991721B2Three-dimensional memory device including liner free molybdenum word lines and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 27, 2021·4 cites·18 claims
- 2397US10115459B1Multiple liner interconnects for three dimensional memory devices and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2017·Granted Oct 30, 2018·34 cites·19 claims
- 2497US9818801B1Resistive three-dimensional memory device with heterostructure semiconductor local bit line and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Nov 14, 2017·24 cites·13 claims
- 2597US9478495B1Three dimensional memory device containing aluminum source contact via structure and method of making thereofSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 25, 2016·82 cites·27 claims
- 2697US9287290B13D memory having crystalline silicon NAND string channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Mar 15, 2016·27 cites·14 claims
- 2797US9230985B1Vertical TFT with tunnel barrierSANDISK 3D LLC·Filed 2014·Granted Jan 5, 2016·107 cites·20 claims
- 2897US8951859B2Method for fabricating passive devices for 3D non-volatile memoryHIGASHITANI MASAAKI·Filed 2011·Granted Feb 10, 2015·42 cites·29 claims
- 2997US8643142B2Passive devices for 3D non-volatile memoryHIGASHITANI MASAAKI·Filed 2011·Granted Feb 4, 2014·34 cites·3 claims
- 3096US11302713B2Three-dimensional memory device including III-V compound semiconductor channel layer and method of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 12, 2022·4 cites·3 claims
- 3196US9881929B1Multi-tier memory stack structure containing non-overlapping support pillar structures and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jan 30, 2018·110 cites·15 claims
- 3296US9876025B2Methods for manufacturing ultrathin semiconductor channel three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jan 23, 2018·16 cites·34 claims
- 3396US9530506B2NAND boosting using dynamic ramping of word line voltagesSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 27, 2016·27 cites·19 claims
- 3496US9368510B1Method of forming memory cell with high-k charge trapping layerSANDISK TECHNOLOGIES INC·Filed 2015·Granted Jun 14, 2016·15 cites·22 claims
- 3595US11869877B2Bonded assembly including inter-die via structures and methods for making the sameSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jan 9, 2024·3 cites·19 claims
- 3695US11296113B2Three-dimensional memory device with vertical field effect transistors and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Apr 5, 2022·3 cites·20 claims
- 3795US9941295B2Method of making a three-dimensional memory device having a heterostructure quantum well channelSANDISK TECHNOLOGIES INC·Filed 2015·Granted Apr 10, 2018·14 cites·17 claims
- 3895US9685484B1Reversible resistivity memory with crystalline silicon bit lineSANDISK TECHNOLOGIES LLC·Filed 2016·Granted Jun 20, 2017·18 cites·23 claims
- 3995US9515085B2Vertical memory device with bit line air gapSANDISK TECHNOLOGIES INC·Filed 2014·Granted Dec 6, 2016·41 cites·6 claims
- 4095US9331093B2Three dimensional NAND device with silicon germanium heterostructure channelSANDISK TECHNOLOGIES INC·Filed 2014·Granted May 3, 2016·20 cites·20 claims
- 4195US9129681B2Thin film transistorSANDISK TECHNOLOGIES INC·Filed 2013·Granted Sep 8, 2015·14 cites·16 claims
- 4295US9105468B2Vertical bit line wide band gap TFT decoderSANDISK 3D LLC·Filed 2013·Granted Aug 11, 2015·18 cites·19 claims
- 4395US8923048B23D non-volatile storage with transistor decoding structureSANDISK TECHNOLOGIES INC·Filed 2013·Granted Dec 30, 2014·13 cites·30 claims
- 4494US12016179B2Three dimensional memory device containing resonant tunneling barrier and high mobility channel and method of making thereofSANDISK TECHNOLOGIES LLC·Filed 2021·Granted Jun 18, 2024·2 cites·14 claims
- 4594US11424215B2Bonded assembly formed by hybrid wafer bonding using selectively deposited metal linersSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Aug 23, 2022·3 cites·19 claims
- 4694US11177284B2Ferroelectric memory devices containing a two-dimensional charge carrier gas channel and methods of making the sameSANDISK TECHNOLOGIES LLC·Filed 2020·Granted Nov 16, 2021·3 cites·15 claims
- 4794US9780108B2Ultrathin semiconductor channel three-dimensional memory devicesSANDISK TECHNOLOGIES INC·Filed 2015·Granted Oct 3, 2017·10 cites·33 claims
- 4894US9449980B2Band gap tailoring for a tunneling dielectric for a three-dimensional memory structureSANDISK TECHNOLOGIES INC·Filed 2014·Granted Sep 20, 2016·18 cites·38 claims
- 4994US9240420B23D non-volatile storage with wide band gap transistor decoderSANDISK TECHNOLOGIES INC·Filed 2013·Granted Jan 19, 2016·20 cites·21 claims
- 5094US8956968B2Method for fabricating a metal silicide interconnect in 3D non-volatile memoryHIGASHITANI MASAAKI·Filed 2011·Granted Feb 17, 2015·21 cites·28 claims
Showing the top 50 of 143 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →