Inventor · disambiguated record
Pei-Yu Wang
Also filed as: WANG PEI · WANG PEI-YU
72 granted patents·39 pending applications·124 citations·filing 2004–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD86ADVANCED SEMICONDUCTOR ENG5WANG PEI-YU3FONG ZHANG-HUA2GENII IDEAS CO LTD2
Top patents by PatentIndex Score
111 records- 0199US11450751B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 20, 2022·8 cites·20 claims
- 0299US11195930B1Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 7, 2021·17 cites·20 claims
- 0398US11251308B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 15, 2022·5 cites·20 claims
- 0497US11581410B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·3 cites·20 claims
- 0597US11532744B2Gate cut structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 20, 2022·4 cites·20 claims
- 0696US11942523B2Semiconductor devices and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 26, 2024·2 cites·20 claims
- 0796US11942530B2Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 26, 2024·2 cites·20 claims
- 0895US11984402B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·2 cites·20 claims
- 0995US11764262B2Multi-gate device with air gap spacer and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 19, 2023·2 cites·20 claims
- 1094US11777003B2Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·2 cites·20 claims
- 1194US11410930B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·3 cites·20 claims
- 1292US11177344B2Multi-gate device with air gap spacer and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 16, 2021·5 cites·20 claims
- 1392US10510860B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 17, 2019·5 cites·20 claims
- 1491US11862525B2Semiconductor device package and a method of manufacturing the sameADVANCED SEMICONDUCTOR ENG·Filed 2022·Granted Jan 2, 2024·1 cites·20 claims
- 1591US2025329537A1Method for metal gate cut and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1690US11757042B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 12, 2023·1 cites·20 claims
- 1790US11387233B2Semiconductor device structure and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 12, 2022·2 cites·20 claims
- 1890US8853824B1Enhanced tunnel field effect transistorUNIV NAT CHIAO TUNG·Filed 2013·Granted Oct 7, 2014·12 cites·7 claims
- 1989US12347690B2Method for metal gate cut and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 1, 2025·0 cites·20 claims
- 2088US11843050B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 12, 2023·1 cites·20 claims
- 2187US12490476B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Dec 2, 2025·0 cites·20 claims
- 2287US12300739B2Metal oxide interlayer structure for NFET and PFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2387US12057341B2Semiconductor device with gate cut structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 6, 2024·1 cites·20 claims
- 2486US12261089B2Semiconductor device package and a method of manufacturing the sameADVANCED SEMICONDUCTOR ENG·Filed 2024·Granted Mar 25, 2025·0 cites·13 claims
- 2586US11081356B2Method for metal gate cut and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·2 cites·20 claims
- 2685US12300728B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted May 13, 2025·0 cites·20 claims
- 2785US10964816B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 30, 2021·2 cites·20 claims
- 2884US2024379807A1Metal source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2983US12495583B2Semiconductor arrangement and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 3083US12148837B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 3183US11916128B2Metal oxide interlayer structure for nFET and pFETTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 27, 2024·0 cites·20 claims
- 3283US11616143B2Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 28, 2023·1 cites·20 claims
- 3383US2025226271A1Semiconductor device package and a method of manufacturing the sameADVANCED SEMICONDUCTOR ENG·Filed 2025·Application pending·0 cites
- 3483US2024372008A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3582US12484254B2Integrated circuit structure with backside via railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 25, 2025·0 cites·20 claims
- 3682US12376356B2Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 3782US12300720B2Multi-gate device with air gap spacer and fabrication methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3882US12211900B2Hybrid channel semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 28, 2025·0 cites·20 claims
- 3982US12148830B2Method and device for boosting performance of FinFETs via strained spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 4082US12148805B2Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 4181US12374624B2Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 4281US11676819B2Method for metal gate cut and structure thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 13, 2023·0 cites·20 claims
- 4381US11276637B2Barrier-free interconnect structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 15, 2022·2 cites·20 claims
- 4481US2024097001A1Metal source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4580US2024387732A1Semiconductor devices with backside power rail and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4680US2025359168A1Semiconductor device with backside power railTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 4780US2025006807A1Semiconductor structure with wraparound backside amorphous layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4879US11854791B2Metal source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·0 cites·20 claims
- 4979US2025366096A1Method of forming cfet device by interposer layer replacement and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 5079US2025359179A1Method of forming nanostructure device by interposer layer replacement and related structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
Showing the top 50 of 111 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →