Inventor · disambiguated record
Peng Xu
Also filed as: XU PENG · Xu peng li
361 granted patents·58 pending applications·2,097 citations·filing 2001–2025
99Inventor score
Top patents by PatentIndex Score
419 records- 0199US11049953B2Nanosheet transistorTESSERA INC·Filed 2020·Granted Jun 29, 2021·6 cites·21 claims
- 0299US10263100B1Buffer regions for blocking unwanted diffusion in nanosheet transistorsIBM·Filed 2018·Granted Apr 16, 2019·145 cites·20 claims
- 0399US10229985B1Vertical field-effect transistor with uniform bottom spacerIBM·Filed 2017·Granted Mar 12, 2019·284 cites·20 claims
- 0499US9984937B1Vertical silicon/silicon-germanium transistors with multiple threshold voltagesIBM·Filed 2017·Granted May 29, 2018·26 cites·15 claims
- 0599US9735253B1Closely packed vertical transistors with reduced contact resistanceIBM·Filed 2016·Granted Aug 15, 2017·48 cites·15 claims
- 0699US9721897B1Transistor with air spacer and self-aligned contactIBM·Filed 2016·Granted Aug 1, 2017·52 cites·12 claims
- 0799US9704863B1Forming a hybrid channel nanosheet semiconductor structureIBM·Filed 2016·Granted Jul 11, 2017·43 cites·20 claims
- 0898US10535733B2Method of forming a nanosheet transistorIBM·Filed 2018·Granted Jan 14, 2020·32 cites·9 claims
- 0998US10522649B2Inverse T-shaped contact structures having air gap spacersIBM·Filed 2018·Granted Dec 31, 2019·23 cites·10 claims
- 1098US10243061B1Nanosheet transistorIBM·Filed 2017·Granted Mar 26, 2019·28 cites·13 claims
- 1198US10236364B1Tunnel transistorIBM·Filed 2018·Granted Mar 19, 2019·26 cites·10 claims
- 1298US10056289B1Fabrication of vertical transport fin field effect transistors with a self-aligned separator and an isolation region with an air gapIBM·Filed 2017·Granted Aug 21, 2018·44 cites·14 claims
- 1398US10043900B1Vertical transport Fin field effect transistors on a substrate with varying effective gate lengthsIBM·Filed 2017·Granted Aug 7, 2018·29 cites·14 claims
- 1498US9972542B1Hybrid-channel nano-sheet FETsIBM·Filed 2017·Granted May 15, 2018·22 cites·20 claims
- 1598US9935102B1Method and structure for improving vertical transistorIBM·Filed 2016·Granted Apr 3, 2018·28 cites·19 claims
- 1698US9899372B1Forming on-chip metal-insulator-semiconductor capacitorIBM·Filed 2016·Granted Feb 20, 2018·31 cites·6 claims
- 1798US9853131B1Fabrication of an isolated dummy fin between active vertical fins with tight fin pitchIBM·Filed 2016·Granted Dec 26, 2017·26 cites·13 claims
- 1898US9818875B1Approach to minimization of strain loss in strained fin field effect transistorsIBM·Filed 2016·Granted Nov 14, 2017·35 cites·14 claims
- 1998US9805983B1Multi-layer filled gate cut to prevent power rail shorting to gate structureIBM·Filed 2016·Granted Oct 31, 2017·34 cites·17 claims
- 2098US9748245B1Multiple finFET formation with epitaxy separationIBM·Filed 2016·Granted Aug 29, 2017·28 cites·16 claims
- 2198US9685440B1Forming fins utilizing alternating pattern of spacersIBM·Filed 2016·Granted Jun 20, 2017·25 cites·14 claims
- 2298US9614087B1Strained vertical field-effect transistor (FET) and method of forming the sameIBM·Filed 2016·Granted Apr 4, 2017·27 cites·20 claims
- 2397US10957778B2Formation of air gap spacers for reducing parasitic capacitanceIBM·Filed 2020·Granted Mar 23, 2021·4 cites·20 claims
- 2497US10930563B2Formation of stacked nanosheet semiconductor devicesIBM·Filed 2020·Granted Feb 23, 2021·4 cites·16 claims
- 2597US10832962B1Formation of an air gap spacer using sacrificial spacer layerIBM·Filed 2019·Granted Nov 10, 2020·17 cites·18 claims
- 2697US10504794B1Self-aligned silicide/germanide formation to reduce external resistance in a vertical field-effect transistorIBM·Filed 2018·Granted Dec 10, 2019·13 cites·15 claims
- 2797US10497796B1Vertical transistor with reduced gate length variationIBM·Filed 2018·Granted Dec 3, 2019·16 cites·18 claims
- 2897US10388569B1Formation of stacked nanosheet semiconductor devicesIBM·Filed 2018·Granted Aug 20, 2019·16 cites·10 claims
- 2997US10283565B1Resistive memory with a plurality of resistive random access memory cells each comprising a transistor and a resistive elementIBM·Filed 2017·Granted May 7, 2019·20 cites·14 claims
- 3097US10229983B1Methods and structures for forming field-effect transistors (FETs) with low-k spacersIBM·Filed 2017·Granted Mar 12, 2019·16 cites·19 claims
- 3197US10134859B1Transistor with asymmetric spacersIBM·Filed 2017·Granted Nov 20, 2018·16 cites·5 claims
- 3297US10090412B1Vertical transistor with back bias and reduced parasitic capacitanceIBM·Filed 2017·Granted Oct 2, 2018·15 cites·2 claims
- 3397US10084094B1Wrapped source/drain contacts with enhanced areaIBM·Filed 2017·Granted Sep 25, 2018·17 cites·5 claims
- 3497US10002795B1Method and structure for forming vertical transistors with shared gates and separate gatesIBM·Filed 2017·Granted Jun 19, 2018·16 cites·14 claims
- 3597US9935195B1Reduced resistance source and drain extensions in vertical field effect transistorsIBM·Filed 2017·Granted Apr 3, 2018·16 cites·19 claims
- 3697US9773893B1Forming a sacrificial liner for dual channel devicesIBM·Filed 2016·Granted Sep 26, 2017·11 cites·20 claims
- 3797US9754798B1Hybridization fin reveal for uniform fin reveal depth across different fin pitchesIBM·Filed 2016·Granted Sep 5, 2017·17 cites·16 claims
- 3897US9647120B1Vertical FET symmetric and asymmetric source/drain formationIBM·Filed 2016·Granted May 9, 2017·21 cites·20 claims
- 3997US6784644B2Multiphase clamp coupled-buck converter and magnetic integrationVIRGINIA TECH INTELL PROP·Filed 2002·Granted Aug 31, 2004·172 cites·27 claims
- 4096US10741401B1Self-aligned semiconductor gate cutIBM·Filed 2019·Granted Aug 11, 2020·14 cites·20 claims
- 4196US10553495B2Nanosheet transistors with different gate dielectrics and workfunction metalsIBM·Filed 2017·Granted Feb 4, 2020·9 cites·15 claims
- 4296US10490447B1Airgap formation in BEOL interconnect structure using sidewall image transferIBM·Filed 2018·Granted Nov 26, 2019·11 cites·13 claims
- 4396US10446664B1Inner spacer formation and contact resistance reduction in nanosheet transistorsIBM·Filed 2018·Granted Oct 15, 2019·13 cites·18 claims
- 4496US10347744B1Method and structure of forming FinFET contactIBM·Filed 2018·Granted Jul 9, 2019·12 cites·13 claims
- 4596US10297667B1Fin field-effect transistor for input/output device integrated with nanosheet field-effect transistorIBM·Filed 2017·Granted May 21, 2019·19 cites·16 claims
- 4696US10249755B1Transistor with asymmetric source/drain overlapIBM·Filed 2018·Granted Apr 2, 2019·12 cites·4 claims
- 4796US10211302B2Field effect transistor devices having gate contacts formed in active region overlapping source/drain contactsIBM·Filed 2017·Granted Feb 19, 2019·10 cites·9 claims
- 4896US9991365B1Forming vertical transport field effect transistors with uniform bottom spacer thicknessIBM·Filed 2017·Granted Jun 5, 2018·12 cites·15 claims
- 4996US9865598B1FinFET with uniform shallow trench isolation recessIBM·Filed 2017·Granted Jan 9, 2018·11 cites·25 claims
- 5096US9728635B1Uniform gate length in vertical field effect transistorsIBM·Filed 2016·Granted Aug 8, 2017·13 cites·13 claims
Showing the top 50 of 419 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →