Inventor · disambiguated record
Philippe Boivin
Also filed as: BOIVIN PHILIPPE
52 granted patents·10 pending applications·77 citations·filing 1988–2025
97Inventor score
Files withST MICROELECTRONICS ROUSSET31ST MICROELECTRONICS CROLLES 2 SAS17STMICROELECTRONICS ROUSSET4BOIVIN PHILIPPE2ST MICROELECTRONICS SA2
Top patents by PatentIndex Score
62 records- 0196US11957067B2Phase-change memory cell having a compact structureST MICROELECTRONICS CROLLES 2 SAS·Filed 2021·Granted Apr 9, 2024·2 cites·8 claims
- 0290US11411177B2Phase-change memory with insulated wallsST MICROELECTRONICS CROLLES 2 SAS·Filed 2020·Granted Aug 9, 2022·2 cites·10 claims
- 0388US11653582B2Chip containing an onboard non-volatile memory comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted May 16, 2023·4 cites·19 claims
- 0487US12484460B2Phase-change memory cell having a compact structureST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Granted Nov 25, 2025·0 cites·14 claims
- 0586US2024407179A1Resistive memory cell having an ovonic threshold switchST MICROELECTRONICS ROUSSET·Filed 2024·Application pending·0 cites
- 0685US12096640B2Resistive memory cell having an ovonic threshold switchST MICROELECTRONICS ROUSSET·Filed 2023·Granted Sep 17, 2024·0 cites·20 claims
- 0784US9929146B2Method of forming MOS and bipolar transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2017·Granted Mar 27, 2018·4 cites·18 claims
- 0884US2025120326A1Insulation of phase-change memory cellsST MICROELECTRONICS ROUSSET·Filed 2024·Application pending·0 cites
- 0983US11875847B2Self-referenced and regulated sensing solution for phase change memory with ovonic threshold switchUNIV AIX MARSEILLE·Filed 2022·Granted Jan 16, 2024·2 cites·28 claims
- 1082US10128314B2Vertical bipolar transistorST MICROELECTRONICS ROUSSET·Filed 2017·Granted Nov 13, 2018·3 cites·20 claims
- 1180US10431630B2Method for producing transistors, in particular selection transistors for non-volatile memory, and corresponding deviceST MICROELECTRONICS ROUSSET·Filed 2017·Granted Oct 1, 2019·3 cites·16 claims
- 1280US9559297B2Vertical transistor for resistive memorySTMICROELECTRONICS ROUSSET·Filed 2016·Granted Jan 31, 2017·2 cites·20 claims
- 1380US7315071B2Magnetic RAMST MICROELECTRONICS ROUSSET·Filed 2005·Granted Jan 1, 2008·7 cites·4 claims
- 1479US9196654B2Method of fabricating a vertical MOS transistorST MICROELECTRONICS ROUSSET·Filed 2014·Granted Nov 24, 2015·3 cites·12 claims
- 1577US11637144B2Method of forming resistive memory cell having an ovonic threshold switchST MICROELECTRONICS ROUSSET·Filed 2021·Granted Apr 25, 2023·0 cites·20 claims
- 1677US10319906B2Process for fabricating resistive memory cellsST MICROELECTRONICS ROUSSET·Filed 2016·Granted Jun 11, 2019·2 cites·20 claims
- 1774US9735353B2Phase-change memory cell having a compact structureST MICROELECTRONICS CROLLES 2 SAS·Filed 2016·Granted Aug 15, 2017·2 cites·21 claims
- 1872US12213392B2Insulation of phase-change memory cellsST MICROELECTRONICS ROUSSET·Filed 2021·Granted Jan 28, 2025·0 cites·17 claims
- 1972US11800821B2Phase-change memory with an insulating layer on a cavity sidewallST MICROELECTRONICS CROLLES 2 SAS·Filed 2022·Granted Oct 24, 2023·0 cites·20 claims
- 2072US8048685B2Magnetic RAMST MICROELECTRONICS ROUSSET·Filed 2010·Granted Nov 1, 2011·4 cites·19 claims
- 2170US12262649B2Phase-change memoryST MICROELECTRONICS ROUSSET·Filed 2021·Granted Mar 25, 2025·0 cites·20 claims
- 2270US9793321B2Resistive memory cell having a compact structureST MICROELECTRONICS CROLLES 2 SAS·Filed 2015·Granted Oct 17, 2017·2 cites·18 claims
- 2369US12232435B2Chip containing an onboard non-volatile memory comprising a phase-change materialST MICROELECTRONICS CROLLES 2 SAS·Filed 2023·Granted Feb 18, 2025·0 cites·17 claims
- 2469US11882707B2Integrated circuit including transistors having a common baseST MICROELECTRONICS ROUSSET·Filed 2021·Granted Jan 23, 2024·0 cites·20 claims
- 2569US10482957B2Resistive RAM memory cellST MICROELECTRONICS ROUSSET·Filed 2018·Granted Nov 19, 2019·2 cites·18 claims
- 2669US8853615B2Ultraviolet radiation measurement sensorCASTELLAN JULIA·Filed 2012·Granted Oct 7, 2014·3 cites·39 claims
- 2768US10714501B2Co-integration of bulk and SOI transistorsST MICROELECTRONICS ROUSSET·Filed 2018·Granted Jul 14, 2020·1 cites·20 claims
- 2868US8680603B2Transistor comprising nanocrystals and related devicesBOIVIN PHILIPPE·Filed 2012·Granted Mar 25, 2014·2 cites·16 claims
- 2968US2025194439A1Phase-change memoryST MICROELECTRONICS ROUSSET·Filed 2025·Application pending·0 cites
- 3066US11818901B2Integrated circuit including bipolar transistorsST MICROELECTRONICS ROUSSET·Filed 2021·Granted Nov 14, 2023·0 cites·19 claims
- 3166US4997777AManufacturing process for an integrated circuit comprising double gate componentsBOIVIN PHILIPPE·Filed 1988·Granted Mar 5, 1991·25 cites·3 claims
- 3265US10707270B2Resistive memory cell having a compact structureST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Jul 7, 2020·0 cites·20 claims
- 3361US12342734B2Phase-change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2024·Granted Jun 24, 2025·0 cites·20 claims
- 3460US12176030B2Self-referenced and regulated sensing solution for phase change memory with ovonic threshold switchUNIV AIX MARSEILLE·Filed 2023·Granted Dec 24, 2024·0 cites·18 claims
- 3560US11329067B2Co-integration of bulk and SOI transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2020·Granted May 10, 2022·0 cites·20 claims
- 3660US11211428B2Integrated circuit including transistors having a common baseST MICROELECTRONICS ROUSSET·Filed 2019·Granted Dec 28, 2021·0 cites·20 claims
- 3759US10652984B2Light emitting gift wrapping apparatusINSTITUT NAT DOPTIQUE·Filed 2019·Granted May 12, 2020·0 cites·20 claims
- 3859US2024407272A1Electronic deviceST MICROELECTRONICS INT NV·Filed 2024·Application pending·0 cites
- 3958US11114614B2Process for fabricating resistive memory cellsST MICROELECTRONICS ROUSSET·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 4058US8830761B2Method of reading and writing nonvolatile memory cellsST MICROELECTRONICS ROUSSET·Filed 2013·Granted Sep 9, 2014·2 cites·20 claims
- 4156US11114502B2Resistive memory cell having an ovonic threshold switchST MICROELECTRONICS ROUSSET·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 4256US10998378B2Method for producing transistors, in particular selection transistors for non-volatile memory, and corresponding deviceST MICROELECTRONICS ROUSSET·Filed 2019·Granted May 4, 2021·0 cites·19 claims
- 4355US12004432B2Phase-change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2021·Granted Jun 4, 2024·0 cites·22 claims
- 4455US11031550B2Phase-change memory cell having a compact structureST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Jun 8, 2021·0 cites·20 claims
- 4555US8921219B2Process for fabricating a transistor comprising nanocrystalsST MICROELECTRONICS ROUSSET·Filed 2014·Granted Dec 30, 2014·0 cites·23 claims
- 4654US11152430B2Integrated circuit including bipolar transistorsST MICROELECTRONICS ROUSSET·Filed 2019·Granted Oct 19, 2021·0 cites·20 claims
- 4753US9570513B2Vertical bipolar transistorSTMICROELECTRONICS ROUSSET·Filed 2014·Granted Feb 14, 2017·0 cites·18 claims
- 4852US10381344B2Method of forming MOS and bipolar transistorsST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Aug 13, 2019·0 cites·13 claims
- 4952US2022367497A1Integrated circuit comprising a non-volatile memory of the eeprom type and corresponding manufacturing methodST MICROELECTRONICS ROUSSET·Filed 2022·Application pending·0 cites
- 5051US2022130904A1Buried trackST MICROELECTRONICS ROUSSET·Filed 2021·Application pending·0 cites
Showing the top 50 of 62 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →