Inventor · disambiguated record
Philipp Schuh
Also filed as: SCHUH PHILIPP
0 granted patents·13 pending applications·0 citations·filing 2023–2025
Technology areasC30B
Files withSICRYSTAL GMBH13
Top patents by PatentIndex Score
13 records- 0167US2025198046A1Crucible for producing a sic volume mono crystal and a method for growing a sic volume mono crystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0264US2024263347A1System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing sameSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0364US2024263346A1System for manufacturing a high-quality semiconductor single crystal, and method of manufacturing sameSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0464US2024309546A1Sublimation System And Method Of Growing At Least One Single CrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0564US2024318352A1Method and apparatus for the thermal post-treatment of at least one sic volume monocrystalSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0664US2024309545A1Sublimation System and Method of Growing at Least One Single Crystal of a Semiconductor MaterialSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0763US2025198048A1Arrangement for growing a sic volume monocrystal and growing methodSICRYSTAL GMBH·Filed 2024·Application pending·0 cites
- 0860US2024392471A1Method for Producing a Bulk SiC Single Crystal with Improved Quality Using a SiC Seed Crystal with a Temporary Protective Oxide Layer, and SiC Seed Crystal with Protective Oxide LayerSICRYSTAL GMBH·Filed 2023·Application pending·0 cites
- 0956US2025283247A1Seed unit and apparatus for growing a bulk sic single crystalSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 1052US2025313990A1Layered Substrate, Method of Fabrication of a Layered Substrate and Method for Growing an Epitaxial Layer with the Layered SubstrateSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 1152US2025313987A1Layered Seed, Method of Fabrication of a Layered Seed and Method for Growing a Volume Mono Crystal with the Layered SeedSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 1252US2025313988A1Multilayer Seed for Single-Crystal Growth, Method of Producing a Multilayer Seed, Use of the Multilayer Seed in a PVT Process for Growing a Single-Crystal and PVT Process Using the SameSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
- 1352US2025283246A1Production method for a bulk sic single crystalSICRYSTAL GMBH·Filed 2025·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Philipp Schuh files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →