Inventor · disambiguated record
Phillip G. Wald
Also filed as: WALD PHILLIP G
63 granted patents·8 pending applications·1,377 citations·filing 1990–2007
99Inventor score
Files withMICRON TECHNOLOGY INC71
Top patents by PatentIndex Score
71 records- 0199US6306705B1Methods of forming capacitors, DRAM arrays, and monolithic integrated circuitsMICRON TECHNOLOGY INC·Filed 1999·Granted Oct 23, 2001·253 cites·6 claims
- 0299US5238862AMethod of forming a stacked capacitor with striated electrodeMICRON TECHNOLOGY INC·Filed 1992·Granted Aug 24, 1993·268 cites·14 claims
- 0394US6545899B1ROM embedded DRAM with bias sensingMICRON TECHNOLOGY INC·Filed 2001·Granted Apr 8, 2003·53 cites·24 claims
- 0492US6781867B2Embedded ROM device using substrate leakageMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 24, 2004·44 cites·11 claims
- 0591US5300801AStacked capacitor constructionMICRON TECHNOLOGY INC·Filed 1993·Granted Apr 5, 1994·67 cites·4 claims
- 0686US6281131B1Methods of forming electrical contactsMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 28, 2001·63 cites·51 claims
- 0784US6710390B2Capacitors and DRAM arraysMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 23, 2004·37 cites·8 claims
- 0883US5895274AHigh-pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 20, 1999·38 cites·22 claims
- 0982US7366946B2ROM redundancy in ROM embedded DRAMMICRON TECHNOLOGY INC·Filed 2007·Granted Apr 29, 2008·11 cites·21 claims
- 1081US6180485B1Methods of forming capacitors, DRAM arrays, and monolithic integrated circuitsMICRON TECHNOLOGY INC·Filed 1999·Granted Jan 30, 2001·29 cites·12 claims
- 1181US5739068ASemiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric materialMICRON TECHNOLOGY INC·Filed 1996·Granted Apr 14, 1998·51 cites·29 claims
- 1280US6737730B1High-pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 2000·Granted May 18, 2004·12 cites·6 claims
- 1380US6207523B1Methods of forming capacitors DRAM arrays, and monolithic integrated circuitsMICRON TECHNOLOGY INC·Filed 1997·Granted Mar 27, 2001·29 cites·39 claims
- 1479US6387828B1High-pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 2000·Granted May 14, 2002·11 cites·10 claims
- 1578US6002623ASemiconductor memory with test circuitMICRON TECHNOLOGY INC·Filed 1999·Granted Dec 14, 1999·39 cites·23 claims
- 1676US6785167B2ROM embedded DRAM with programmingMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 31, 2004·22 cites·37 claims
- 1776US6407455B1Local interconnect using spacer-masked contact etchMICRON TECHNOLOGY INC·Filed 2000·Granted Jun 18, 2002·20 cites·16 claims
- 1872US6703325B1High pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 2000·Granted Mar 9, 2004·7 cites·14 claims
- 1972US6665207B2ROM embedded DRAM with dielectric removal/shortMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 16, 2003·14 cites·10 claims
- 2071US5932491AReduction of contact size utilizing formation of spacer material over resist patternMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 3, 1999·41 cites·18 claims
- 2170US6735108B2ROM embedded DRAM with anti-fuse programmingMICRON TECHNOLOGY INC·Filed 2002·Granted May 11, 2004·14 cites·20 claims
- 2269US6996021B2ROM embedded DRAM with bias sensingMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 7, 2006·9 cites·10 claims
- 2367US6107189AMethod of making a local interconnect using spacer-masked contact etchMICRON TECHNOLOGY INC·Filed 1997·Granted Aug 22, 2000·30 cites·40 claims
- 2466US5684809ASemiconductor memory with test circuitMICRON TECHNOLOGY INC·Filed 1997·Granted Nov 4, 1997·24 cites·23 claims
- 2565US7218547B2ROM embedded DRAM with anti-fuse programmingMICRON TECHNOLOGY INC·Filed 2004·Granted May 15, 2007·11 cites·25 claims
- 2665US7174477B2ROM redundancy in ROM embedded DRAMMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 6, 2007·11 cites·27 claims
- 2764US6670289B2High-pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 30, 2003·4 cites·3 claims
- 2864USRE37505EStacked capacitor constructionMICRON TECHNOLOGY INC·Filed 1996·Granted Jan 15, 2002·17 cites·83 claims
- 2962US6144109AMethod for improving a stepper signal in a planarized surface over alignment topographyMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 7, 2000·7 cites·22 claims
- 3061US6391805B1High-pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 2000·Granted May 21, 2002·3 cites·3 claims
- 3160US6753617B2Method for improving a stepper signal in a planarized surface over alignment topographyMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 22, 2004·6 cites·16 claims
- 3259US6747889B2Half density ROM embedded DRAMMICRON TECHNOLOGY INC·Filed 2001·Granted Jun 8, 2004·8 cites·16 claims
- 3358US6455400B1Semiconductor processing methods of forming silicon layersMICRON TECHNOLOGY INC·Filed 2000·Granted Sep 24, 2002·5 cites·9 claims
- 3456US6731556B2DRAM with bias sensingMICRON TECHNOLOGY INC·Filed 2003·Granted May 4, 2004·7 cites·38 claims
- 3556US6352946B1High-pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 1999·Granted Mar 5, 2002·9 cites·5 claims
- 3655US6852611B2ROM embedded DRAM with dielectric removal/shortMICRON TECHNOLOGY INC·Filed 2003·Granted Feb 8, 2005·5 cites·15 claims
- 3751US6865100B26F2 architecture ROM embedded DRAMMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 8, 2005·6 cites·39 claims
- 3850US6096626ASemiconductor structures and semiconductor processing methods of forming silicon layersMICRON TECHNOLOGY INC·Filed 1998·Granted Aug 1, 2000·13 cites·11 claims
- 3950US2005289442A1Error correction in ROM embedded DRAMMICRON TECHNOLOGY INC·Filed 2005·Application pending·0 cites
- 4049US7001816B2Embedded ROM device using substrate leakageMICRON TECHNOLOGY INC·Filed 2004·Granted Feb 21, 2006·3 cites·18 claims
- 4149US6788603B2ROM embedded DRAM with bias sensingMICRON TECHNOLOGY INC·Filed 2003·Granted Sep 7, 2004·3 cites·30 claims
- 4249US6242816B1Method for improving a stepper signal in a planarized surface over alignment topographyMICRON TECHNOLOGY INC·Filed 1998·Granted Jun 5, 2001·10 cites·19 claims
- 4349US6153527ASemiconductor processing method of making electrical contact to a node received within a mass of insulating dielectric materialMICRON TECHNOLOGY INC·Filed 1999·Granted Nov 28, 2000·11 cites·8 claims
- 4449US5030587AMethod of forming substantially planar digit linesMICRON TECHNOLOGY INC·Filed 1990·Granted Jul 9, 1991·18 cites·1 claims
- 4547US6903957B2Half density ROM embedded DRAMMICRON TECHNOLOGY INC·Filed 2004·Granted Jun 7, 2005·4 cites·27 claims
- 4647US6472328B2Methods of forming an electrical contact to semiconductive materialMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 29, 2002·3 cites·20 claims
- 4746US6309941B1Methods of forming capacitorsMICRON TECHNOLOGY INC·Filed 2001·Granted Oct 30, 2001·1 cites·41 claims
- 4845US6768664B2ROM embedded DRAM with bias sensingMICRON TECHNOLOGY INC·Filed 2003·Granted Jul 27, 2004·2 cites·14 claims
- 4945US6703326B2High-pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 9, 2004·0 cites·7 claims
- 5044US6703327B2High-pressure anneal process for integrated circuitsMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 9, 2004·0 cites·14 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →