Inventor · disambiguated record
Ping Hsu
Also filed as: HSU PING · HSU PING-CHENG
44 granted patents·27 pending applications·141 citations·filing 2002–2025
97Inventor score
Files withNANYA TECHNOLOGY CORP58HSU PING4UNITED MICROELECTRONICS CORP4CHUANG YING CHENG3MICRON TECHNOLOGY INC1
Top patents by PatentIndex Score
71 records- 0197US11917813B2Memory array with contact enhancement cap and method for preparing the memory arrayNANYA TECHNOLOGY CORP·Filed 2021·Granted Feb 27, 2024·2 cites·6 claims
- 0297US11792972B2Method for preparing memory array with contact enhancement capNANYA TECHNOLOGY CORP·Filed 2021·Granted Oct 17, 2023·2 cites·9 claims
- 0391US7019350B2Trench device structure with single-side buried strap and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2005·Granted Mar 28, 2006·15 cites·6 claims
- 0490US11908693B2Method for preparing semiconductor device structure with lining layerNANYA TECHNOLOGY CORP·Filed 2022·Granted Feb 20, 2024·1 cites·11 claims
- 0588US11063049B2Semiconductor device with self-aligning landing pad and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Jul 13, 2021·4 cites·9 claims
- 0684US10985166B2Method of forming a memory deviceUNITED MICROELECTRONICS CORP·Filed 2018·Granted Apr 20, 2021·3 cites·7 claims
- 0782US2025248020A1Semiconductor device having trench capacitors formed on channel structures and methods for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0882US2025248025A1Semiconductor device having trench capacitors formed on channel structures and methods for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 0981US2025380405A1Method of manufacturing semiconductor structure including nitrogen treatment and semiconductor structure thereofNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1081US2025248029A1Semiconductor device having trench capacitors formed on channel structures and methods for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1180US8415728B2Memory device and method of fabricating the sameCHUANG YING CHENG·Filed 2010·Granted Apr 9, 2013·5 cites·9 claims
- 1280US2025359025A1Memory device having planarized fins and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1380US2025359026A1Memory device having planarized fins and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1480US2025309101A1Memory cell with reduced parasitic capacitance and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1580US2025380404A1Method of manufacturing semiconductor structure including nitrogen treatment and semiconductor structure thereofNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1679US12363881B2Method for preparing memory array with contact enhancement capNANYA TECHNOLOGY CORP·Filed 2023·Granted Jul 15, 2025·0 cites·12 claims
- 1778US2025309098A1Memory cell with reduced parasitic capacitance and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1878US2025311195A1Memory cell with reduced parasitic capacitance and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 1977US2025176174A1Semiconductor structure having active areas and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2075US2025374559A1Semiconductor device structure and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2175US2025374560A1Semiconductor device structure and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2024·Application pending·0 cites
- 2274US2024153772A1Method for preparing semiconductor device structure with lining layerNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2373US8486834B2Method for manufacturing memory deviceHSU PING·Filed 2011·Granted Jul 16, 2013·4 cites·7 claims
- 2473US2025174551A1Semiconductor structure having active areas and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2572US11557576B2Method for fabricating semiconductor device with active interposerNANYA TECHNOLOGY CORP·Filed 2021·Granted Jan 17, 2023·0 cites·15 claims
- 2672US8426925B2Memory device and method of fabricating the sameCHUANG YING CHENG·Filed 2010·Granted Apr 23, 2013·3 cites·16 claims
- 2772US6815307B1Method for fabricating a deep trench capacitorNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 9, 2004·17 cites·9 claims
- 2872US2025140747A1Semiconductor package structure and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 2972US2025140749A1Semiconductor package structure and method of manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 3072US2025174548A1Semiconductor structure having active areas and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 3171US6905897B1Wafer acceptance testing method and structure of a test key used in the methodNANYA TECHNOLOGY CORP·Filed 2003·Granted Jun 14, 2005·13 cites·9 claims
- 3270US10910386B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Feb 2, 2021·1 cites·11 claims
- 3369US11521892B2Method for fabricating a semiconductor deviceNANYA TECHNOLOGY CORP·Filed 2021·Granted Dec 6, 2022·0 cites·8 claims
- 3468US11894268B2Method for fabricating semiconductor device with intervening layerNANYA TECHNOLOGY CORP·Filed 2022·Granted Feb 6, 2024·0 cites·8 claims
- 3568US6960503B2Method for fabricating a trench capacitorNANYA TECHNOLOGY CORP·Filed 2003·Granted Nov 1, 2005·14 cites·11 claims
- 3668US2025185236A1Semiconductor structure having active areas and method for manufacturing the sameNANYA TECHNOLOGY CORP·Filed 2025·Application pending·0 cites
- 3766US11800702B2Method of forming a memory deviceUNITED MICROELECTRONICS CORP·Filed 2021·Granted Oct 24, 2023·0 cites·11 claims
- 3866US11665888B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2020·Granted May 30, 2023·0 cites·8 claims
- 3966US11610895B2Method of manufacturing a semiconductor device with self-aligning landing padNANYA TECHNOLOGY CORP·Filed 2021·Granted Mar 21, 2023·0 cites·10 claims
- 4065US11462519B2Semiconductor device with active interposer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Oct 4, 2022·0 cites·12 claims
- 4165US6979613B1Method for fabricating a trench capacitor of DRAMNANYA TECHNOLOGY CORP·Filed 2003·Granted Dec 27, 2005·12 cites·10 claims
- 4264US11574841B2Semiconductor device with intervening layer and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2020·Granted Feb 7, 2023·0 cites·12 claims
- 4363US8658538B2Method of fabricating memory deviceNANYA TECHNOLOGY CORP·Filed 2013·Granted Feb 25, 2014·1 cites·10 claims
- 4462US7078291B2Method for fabricating a deep trench capacitorNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 18, 2006·10 cites·7 claims
- 4561US8399321B2Method for manufacturing memory deviceHSU PING·Filed 2011·Granted Mar 19, 2013·1 cites·15 claims
- 4661US7081382B2Trench device structure with single-side buried strap and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 25, 2006·6 cites·22 claims
- 4760US12193208B2Capacitors with electrodes having a portion of material removed, and related semiconductor devices, systems, and methodsMICRON TECHNOLOGY INC·Filed 2022·Granted Jan 7, 2025·0 cites·15 claims
- 4860US2025140646A1Semiconductor device with polymer liner and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2023·Application pending·0 cites
- 4959US11101229B2Semiconductor device and method for fabricating the sameNANYA TECHNOLOGY CORP·Filed 2019·Granted Aug 24, 2021·0 cites·9 claims
- 5057US7078289B2Method for fabricating a deep trench capacitor of DRAM deviceNANYA TECHNOLOGY CORP·Filed 2003·Granted Jul 18, 2006·6 cites·9 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →