Inventor · disambiguated record
Pingshan Luan
Also filed as: Luan pingshan
6 granted patents·6 pending applications·15 citations·filing 2021–2024
75Inventor score
Top patents by PatentIndex Score
12 records- 0195US11424120B2Plasma etching techniquesTOKYO ELECTRON LTD·Filed 2021·Granted Aug 23, 2022·7 cites·20 claims
- 0294US11538690B2Plasma etching techniquesTOKYO ELECTRON LTD·Filed 2021·Granted Dec 27, 2022·5 cites·24 claims
- 0388US11837467B2Plasma etching techniquesTOKYO ELECTRON LTD·Filed 2022·Granted Dec 5, 2023·1 cites·20 claims
- 0485US12002683B2Lateral etching of siliconTOKYO ELECTRON LTD·Filed 2022·Granted Jun 4, 2024·1 cites·20 claims
- 0582US11482423B2Plasma etching techniquesTOKYO ELECTRON LTD·Filed 2021·Granted Oct 25, 2022·1 cites·20 claims
- 0662US2025155879A1System for process development assistanceTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 0757US2025166966A1Plasma processing with phase-locked waveformsTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 0856US2025087459A1Tunable patterned surface uniformity using direct current biasTOKYO ELECTRON LTD·Filed 2023·Application pending·0 cites
- 0955US12272558B2Selective and isotropic etch of silicon over silicon-germanium alloys and dielectrics; via new chemistry and surface modificationTOKYO ELECTRON LTD·Filed 2022·Granted Apr 8, 2025·0 cites·20 claims
- 1053US2025307521A1Method for process fine tuning based on computer simulationsTOKYO ELECTRON LTD·Filed 2024·Application pending·0 cites
- 1151US2024096640A1High Aspect Ratio Contact (HARC) EtchTOKYO ELECTION LTD·Filed 2022·Application pending·0 cites
- 1248US2023094212A1Plasma etch process for fabricating high aspect ratio (har) featuresTOKYO ELECTRON LTD·Filed 2021·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →