Inventor · disambiguated record
Po-Yu Huang
Also filed as: HUANG PO-YU
57 granted patents·31 pending applications·128 citations·filing 2012–2025
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD48IND TECH RES INST15ETERNAL MAT CO LTD11MEDIATEK INC7CYBERLINK CORP3
Top patents by PatentIndex Score
88 records- 0198US12068200B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·5 cites·20 claims
- 0298US11615987B2Backside via with a low-k spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Mar 28, 2023·6 cites·20 claims
- 0397US11276643B2Semiconductor device with backside spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 15, 2022·5 cites·20 claims
- 0496US12068378B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 20, 2024·2 cites·20 claims
- 0596US11532561B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0696US8885976B1Systems and methods for performing image fusionCYBERLINK CORP·Filed 2014·Granted Nov 11, 2014·74 cites·23 claims
- 0795US11876135B2Epitaxial source/drain structures for multigate devices and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 16, 2024·2 cites·20 claims
- 0894US12464806B2Semiconductor transistor device having backside source/drain contact with a low-k spacer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·1 cites·20 claims
- 0994US11791387B2Semiconductor devices with backside via and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·2 cites·20 claims
- 1093US12057392B2Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 6, 2024·2 cites·20 claims
- 1193US11728394B2Method of forming backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 15, 2023·2 cites·20 claims
- 1289US12266703B2Dielectric structures for semiconductor device structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 1, 2025·1 cites·20 claims
- 1387US8731324B1Systems and methods for performing image inpaintingCYBERLINK CORP·Filed 2012·Granted May 20, 2014·10 cites·21 claims
- 1487US2025359137A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1584US12278188B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 15, 2025·0 cites·20 claims
- 1683US12283630B2Epitaxial source/drain structures for multigate devices and methods of fabricating thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 22, 2025·0 cites·20 claims
- 1783US2025239527A1Different Via Configurations for Different Via Interface RequirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1882US11227830B2Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jan 18, 2022·2 cites·20 claims
- 1981US12266606B2Semiconductor device with backside spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 1, 2025·0 cites·20 claims
- 2081US11106190B2System and method for predicting remaining lifetime of a component of equipmentIND TECH RES INST·Filed 2017·Granted Aug 31, 2021·3 cites·20 claims
- 2181US2025233072A1Semiconductor device with backside spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2281US2025366046A1Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2380US12224324B2Method of forming backside power railsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 2480US2025254930A1Epitaxial Source/Drain Structures for Multigate Devices and Methods of Fabricating ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2580US2025359285A1Backside Via and Dual Side Power Rail For Epitaxial Source/Drain StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2679US12142565B2Different via configurations for different via interface requirementsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 12, 2024·0 cites·20 claims
- 2779US2024387660A1Disposable Hard Mask for Interconnect FormationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2877US2024355730A1Conductive features having varying resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2977US2025308984A1Isolation Structure And A Self-Aligned Capping Layer Formed ThereonTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3075US2024134221A1Method for manufacturing electronic deviceINNOLUX CORP·Filed 2024·Application pending·0 cites
- 3175US2024387626A1Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3274US11721626B2Semiconductor device with backside spacer and methods of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 8, 2023·0 cites·20 claims
- 3374US11107896B2Vertical interconnect features and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 31, 2021·1 cites·20 claims
- 3474US10995179B2Polyimide resin and metal-clad laminate comprising the sameETERNAL MAT CO LTD·Filed 2016·Granted May 4, 2021·1 cites·16 claims
- 3574US2025185330A1Method Of Forming Backside Power RailsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3673US11632499B2Multi-camera positioning and dispatching system, and method thereofIND TECH RES INST·Filed 2021·Granted Apr 18, 2023·1 cites·17 claims
- 3773US2024371955A1Contact structure with silicide and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3871US2025006557A1Backside Via and Dual Side Power Rail For Epitaxial Source/Drain StructureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3970US11810002B2Dynamic prediction model establishment method, electric device, and user interfaceIND TECH RES INST·Filed 2019·Granted Nov 7, 2023·2 cites·17 claims
- 4069US12334388B2Isolation structure and a self-aligned capping layer formed thereonTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·0 cites·20 claims
- 4169US2021079161A1Polyimide precursor composition, use thereof and polyimide made therefromETERNAL MAT CO LTD·Filed 2020·Application pending·0 cites
- 4268US12464774B2Semiconductor structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 4, 2025·0 cites·20 claims
- 4368US12080769B2Contact structure with silicide and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 3, 2024·0 cites·20 claims
- 4467US12439678B2Isolation structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 7, 2025·0 cites·20 claims
- 4567US12324202B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 3, 2025·0 cites·20 claims
- 4667US2022359675A1Source/Drain Via Having Reduced ResistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 4766US11034797B2Polyimide precursor composition, use thereof and polyimide made therefromETERNAL MAT CO LTD·Filed 2018·Granted Jun 15, 2021·0 cites·12 claims
- 4866US2022163837A1Electronic device and method for manufacturing the sameINNOLUX CORP·Filed 2021·Application pending·0 cites
- 4965US11855154B2Vertical interconnect features and methods of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 26, 2023·0 cites·20 claims
- 5065US11508822B2Source/drain via having reduced resistanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →