US2021079161A1PendingUtilityA1
Polyimide precursor composition, use thereof and polyimide made therefrom
Est. expiryMar 31, 2037(~10.7 yrs left)· nominal 20-yr term from priority
C08G 73/16C08G 73/1085C08G 73/1075C08G 73/0633C08G 73/18C08G 73/0273C08G 73/0627C08G 73/0644C08G 73/0605C08G 73/1071C08G 73/1007
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Claims
Abstract
The present disclosure relates to a polyimide precursor composition comprising an antic acid ester oligomer of formula (I): wherein r, R x , G, P and R are as defined in the specification. Also, a use of the polyimide precursor composition and a polyimide made from the polyimide precursor composition.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method for metalizing polyimide surface, which sequentially includes the following steps:
(a) reacting a polyimide precursor composition to form a polyimide, the polyimide precursor composition comprising an amic acid ester oligomer of formula (I):
wherein:
r is an integer ranging from 1 to 200;
Each R x is independently H, C 1 -C 14 alkyl or a moiety bearing an ethylenically unsaturated group;
Each R is independently C 1 -C 14 alkyl, C 6 -C 14 aryl or aralkyl, or a moiety bearing an ethylenically unsaturated group;
Each G is independently a tetravalent organic group; and
Each P is independently a divalent organic group, wherein based on the total moles of the divalent organic groups P present in the composition, about 0.5 mol % to about 25 mol % of the divalent organic group P is an divalent organic group that is capable of forming a coordinate bond with a metal ion;
(b) activating a portion of the polyimide surface to form an active zone;
(c) contacting the polyimide in the active zone with metal ions to form a coordination bond(s); and
(d) plating metal in the active zone through electroplating.
2 . The method according to claim 1 , wherein r is an integer ranging from 5 to 150.
3 . The method according to claim 1 , wherein the divalent organic group that is capable of forming a coordinate bond with a metal ion is selected from:
(i) 5 or 6-membered nitrogen-containing heterocyclyl; (ii)
(iii)
(iv)
(v)
and
(vi) any combination of the above radicals,
wherein:
D is a bond, —NH—, —S—, —O—, phenylene or
E is 5 or 6-membered nitrogen-containing heterocyclyl,
F is phenylene or
and
X is —NH—, —S— or —O—.
4 . The method according to claim 1 , wherein the divalent organic group that is capable of forming a coordinate bond with a metal ion is selected from:
or a combination thereof wherein X is —NH—, —S— or —O—.
5 . The method according to claim 1 , wherein based on the total moles of the divalent organic groups P present in the composition, about 1 mol % to about 15 mol % of the divalent organic group P is an divalent organic group that is capable of forming a coordinate bond with a metal ion.
6 . The method according to claim 1 , wherein the remaining divalent organic groups P are each independently a divalent aromatic group or divalent heterocyclic group other than the radicals listed in (i) to (v) and are selected from the group consisting of:
and a combination thereof,
wherein
each R 9 is independently H, C 1 -C 4 alkyl, C 1 -C 4 perfluoroalkyl, C 1 -C 4 alkoxyl or halogen;
each a is independently an integer from 0 to 4;
each b is independently an integer from 0 to 4;
R 10 is a covalent bond, or selected from the group consisting of:
wherein c and d are each independently an integer from 1 to 20, R 12 is —S(O) 2 —, a covalent bond, C 1 -C 4 alkylene or C 1 -C 4 perfluoroalkylene.
7 . The method according to claim 1 , wherein G is selected from the group consisting of:
and a combination thereof,
wherein each X′ is independently H, halogen, C 1 -C 4 perfluoroalkyl, C 1 -C 4 alkyl; and A and B are independently, at each occurrence, a covalent bond, C 1 -C 4 alkylene unsubstituted or substituted with one or more radicals selected from C 1 -C 4 alkyl, C 1 -C 4 perfluoroalkylene, C 1 -C 4 alkoxylene, silylene, —O—, —S—, —C(O)—, —OC(O)—, —S(O) 2 —, —C(═O)O—(C 1 -C 4 alkylene)-OC(═O)—, phenylene, biphenylene or
wherein K is —O—, —S(O) 2 —, C 1 -C 4 alkylene or C 1 -C 4 perfluoroalkylene.
8 . The method according to claim 1 , wherein each R is independently is selected from the group consisting of:
and a combination thereof.
9 . The method according to claim 1 , wherein the polyimide precursor composition further comprises a cyclization promoter having the following formula:
wherein:
R 1 and R 2 are the same or different and are each independently H, C 1 -C 6 alkyl, C 1 -C 6 haloalkyl, or C 1 -C 6 alkyl substituted with one or more C 6 -C 14 aryl,
R A is C 1 -C 6 alkyl, C 1 -C 6 haloalkyl, C 1 -C 8 alkoxy unsubstituted or substituted with one or more C 6 -C 14 aryl, or —NR E R F ; R B , R C , R D , R E and R F are the same or different, and are each independently H, C 1 -C 14 alkyl unsubstituted or substituted with one or more C 6 -C 14 aryl, or C 6 -C 14 aryl;
R 3 , R 4 and R 5 are the same or different, and are each independently H, straight or branched C 1 -C 6 alkyl unsubstituted or substituted with one or more C 6 -C 14 aryl, straight or branched C 1 -C 6 hydroxyalkyl, straight or branched C 1 -C 6 cyanoalkyl, or C 6 -C 14 aryl; and
Y θ is an anionic group.
10 . The method according to claim 1 , wherein the amic acid ester oligomer is in an amount of about 10 wt % to about 70 wt %, based on the total weight of the polyimide precursor composition.
11 . The method according to claim 9 , wherein the cyclization promoter is in an amount of about 0.1 parts by weight to about 2 parts by weight, based on 100 parts by weight of the amic acid ester oligomer of formula (I).
12 . The method according to claim 1 , wherein the divalent organic group that is capable of forming a coordinate bond with a metal ion is selected from:
or a combination thereof, wherein X is —NH—, —S— or —O—.
13 . The method according to claim 1 , wherein the polyimide is activated by plasma or laser.
14 . The method according to claim 1 , wherein the metal ion is copper ion.
15 . The method according to claim 1 , wherein the plated metal is copper.
16 . The method according to claim 1 , wherein in step (d) a patterned metal layer or circuit is formed.Cited by (0)
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