Inventor · disambiguated record
Po-Chi Wu
Also filed as: WU PO-CHI
63 granted patents·8 pending applications·234 citations·filing 2011–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD65CHANG CHE-CHENG2WU PO-CHI2TAIWAN SEMICONDUCTOR MANFACTURING CO LTD1TAIWAN SEMICONDUCTOR MFG1
Top patents by PatentIndex Score
71 records- 0198US9418994B1Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·71 cites·19 claims
- 0296US11532748B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·3 cites·20 claims
- 0396US10411113B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 10, 2019·12 cites·20 claims
- 0496US10355110B2FinFET and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 16, 2019·11 cites·20 claims
- 0594US9818648B2Method for forming Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 14, 2017·11 cites·18 claims
- 0694US9496402B2Metal gate with silicon sidewall spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 15, 2016·9 cites·20 claims
- 0793US11527636B2Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 13, 2022·2 cites·20 claims
- 0893US10483370B2Semiconductor structure with unleveled gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 19, 2019·7 cites·20 claims
- 0993US10269940B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·5 cites·20 claims
- 1093US9583485B2Fin field effect transistor (FinFET) device structure with uneven gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 28, 2017·8 cites·19 claims
- 1192US12002872B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·1 cites·20 claims
- 1291US11764280B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 19, 2023·2 cites·20 claims
- 1391US10134861B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Nov 20, 2018·6 cites·20 claims
- 1490US11855222B2Semiconductor device for recessed fin structure having rounded cornersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·1 cites·20 claims
- 1590US10468407B2Fin field effect transistor (FinFET) device structure with uneven gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·5 cites·19 claims
- 1690US9818841B2Semiconductor structure with unleveled gate structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 14, 2017·5 cites·19 claims
- 1790US9660084B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 23, 2017·5 cites·20 claims
- 1889US10651311B2Metal gate with silicon sidewall spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 12, 2020·4 cites·20 claims
- 1989US10636787B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·4 cites·20 claims
- 2089US10269963B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·4 cites·20 claims
- 2189US10090396B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 2, 2018·4 cites·20 claims
- 2289US9991256B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 5, 2018·5 cites·20 claims
- 2389US9356120B2Metal gate transistor and method for tuning metal gate profileTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 31, 2016·10 cites·20 claims
- 2488US11444176B2Structure and formation method of semiconductor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 13, 2022·3 cites·20 claims
- 2588US11251289B2FinFET device comprising plurality of dummy protruding featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 15, 2022·3 cites·20 claims
- 2687US12477767B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 18, 2025·0 cites·20 claims
- 2786US8530317B1Corner rounding to improve metal fill in replacement gate processWU PO-CHI·Filed 2012·Granted Sep 10, 2013·14 cites·20 claims
- 2886US2024372000A1Semiconductor Device Structure and Method for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2986US2025331224A1A semiconductor device for recessed fin structure having rounded corners and method of manufacturing thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3086US2024387678A1Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3185US12159916B2Method for fabricating metal gate devices and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 3, 2024·0 cites·20 claims
- 3285US9793269B2Semiconductor device and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Oct 17, 2017·5 cites·20 claims
- 3385US2024371698A1Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MANFACTURING CO LTD·Filed 2024·Application pending·0 cites
- 3484US10763341B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·2 cites·20 claims
- 3584US9673112B2Method of semiconductor fabrication with height control through active region profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 6, 2017·3 cites·20 claims
- 3684US2024322009A1Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3783US2024379826A1FinFET Device Comprising Plurality of Dummy Protruding FeaturesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3882US12495572B2Semiconductor device for recessed fin structure having rounded cornersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 9, 2025·0 cites·20 claims
- 3982US11211380B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 28, 2021·1 cites·20 claims
- 4081US12136572B2Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 5, 2024·0 cites·20 claims
- 4181US11784242B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 10, 2023·0 cites·20 claims
- 4281US9799565B2Method for forming semiconductor device structure with gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 24, 2017·2 cites·20 claims
- 4380US12100765B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 24, 2024·0 cites·20 claims
- 4480US12002871B2Semiconductor device structure with work function layer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 4, 2024·0 cites·20 claims
- 4579US12310052B2Metal gate with silicon sidewall spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 20, 2025·0 cites·19 claims
- 4679US11469145B2Method for forming semiconductor device structure with gate and resulting structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 11, 2022·1 cites·20 claims
- 4778US10790394B2Semiconductor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 29, 2020·1 cites·20 claims
- 4877US11145510B2FinFET device over convex insulating structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·1 cites·20 claims
- 4976US12176424B2FinFET device comprising plurality of dummy protruding featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 24, 2024·0 cites·20 claims
- 5076US11139295B2Fin field effect transistor (FinFET) device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 5, 2021·1 cites·20 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →