Inventor · disambiguated record
Praneet Adusumilli
Also filed as: ADUSUMILLI PRANEET
152 granted patents·11 pending applications·788 citations·filing 2010–2024
99Inventor score
Top patents by PatentIndex Score
163 records- 0199US9496225B1Recessed metal liner contact with copper fillIBM·Filed 2016·Granted Nov 15, 2016·409 cites·10 claims
- 0298US9805989B1Sacrificial cap for forming semiconductor contactIBM·Filed 2016·Granted Oct 31, 2017·29 cites·20 claims
- 0398US9741812B1Dual metal interconnect structureIBM·Filed 2016·Granted Aug 22, 2017·28 cites·9 claims
- 0497US9934977B1Salicide bottom contactsIBM·Filed 2017·Granted Apr 3, 2018·14 cites·13 claims
- 0597US9768077B1Low resistance dual liner contacts for Fin Field-Effect Transistors (FinFETs)IBM·Filed 2016·Granted Sep 19, 2017·21 cites·13 claims
- 0697US9437714B1Selective gate contact fill metallizationIBM·Filed 2015·Granted Sep 6, 2016·23 cites·16 claims
- 0796US10580966B1Faceted sidewall magnetic tunnel junction structureIBM·Filed 2018·Granted Mar 3, 2020·20 cites·9 claims
- 0896US10074727B2Low resistivity wrap-around contactsIBM·Filed 2016·Granted Sep 11, 2018·15 cites·12 claims
- 0996US9978750B1Low resistance source/drain contacts for complementary metal oxide semiconductor (CMOS) devicesIBM·Filed 2017·Granted May 22, 2018·11 cites·17 claims
- 1095US10461148B1Multilayer buried metal-insultor-metal capacitor structuresIBM·Filed 2018·Granted Oct 29, 2019·10 cites·20 claims
- 1195US9935051B2Multi-level metallization interconnect structureIBM·Filed 2016·Granted Apr 3, 2018·12 cites·12 claims
- 1294US10090287B1Deep high capacity capacitor for bulk substratesIBM·Filed 2017·Granted Oct 2, 2018·8 cites·10 claims
- 1394US9735165B1Vertically stacked FinFET fuseIBM·Filed 2016·Granted Aug 15, 2017·9 cites·18 claims
- 1493US11588105B2Phase-change memory device with reduced programming voltageIBM·Filed 2021·Granted Feb 21, 2023·2 cites·20 claims
- 1593US9805973B2Dual silicide liner flow for enabling low contact resistanceIBM·Filed 2015·Granted Oct 31, 2017·6 cites·16 claims
- 1692US10269698B1Binary metallization structure for nanoscale dual damascene interconnectsIBM·Filed 2017·Granted Apr 23, 2019·7 cites·10 claims
- 1791US10170419B2Biconvex low resistance metal wireIBM·Filed 2016·Granted Jan 1, 2019·6 cites·10 claims
- 1891US10049980B1Low resistance seed enhancement spacers for voidless interconnect structuresIBM·Filed 2017·Granted Aug 14, 2018·7 cites·16 claims
- 1991US9613899B1Epitaxial semiconductor fuse for FinFET structureIBM·Filed 2015·Granted Apr 4, 2017·7 cites·19 claims
- 2091US9570574B1Recessed metal liner contact with copper fillIBM·Filed 2016·Granted Feb 14, 2017·6 cites·14 claims
- 2190US12057387B2Decoupling capacitor inside gate cut trenchIBM·Filed 2020·Granted Aug 6, 2024·2 cites·21 claims
- 2290US10388600B2Binary metallization structure for nanoscale dual damascene interconnectsIBM·Filed 2018·Granted Aug 20, 2019·5 cites·10 claims
- 2390US10056329B1Programmable buried antifuseIBM·Filed 2017·Granted Aug 21, 2018·5 cites·13 claims
- 2489US9831254B1Multiple breakdown point low resistance anti-fuse structureIBM·Filed 2016·Granted Nov 28, 2017·6 cites·20 claims
- 2589US9722038B2Metal cap protection layer for gate and contact metallizationIBM·Filed 2015·Granted Aug 1, 2017·7 cites·20 claims
- 2688US11133217B1Late gate cut with optimized contact trench sizeIBM·Filed 2020·Granted Sep 28, 2021·2 cites·19 claims
- 2788US10546941B2Forming thermally stable salicide for salicide first contactsIBM·Filed 2017·Granted Jan 28, 2020·3 cites·18 claims
- 2888US10431503B2Sacrificial cap for forming semiconductor contactIBM·Filed 2017·Granted Oct 1, 2019·4 cites·18 claims
- 2988US9947621B2Structure and method to reduce copper loss during metal cap formationIBM·Filed 2016·Granted Apr 17, 2018·4 cites·12 claims
- 3088US9564310B1Metal-insulator-metal capacitor fabrication with unitary sputtering processIBM·Filed 2015·Granted Feb 7, 2017·4 cites·15 claims
- 3187US10685888B2Low resistance source-drain contacts using high temperature silicidesIBM·Filed 2016·Granted Jun 16, 2020·3 cites·10 claims
- 3287US10056391B2Vertically stacked FinFET fuseIBM·Filed 2017·Granted Aug 21, 2018·4 cites·18 claims
- 3387US9812522B2Metal-insulator-metal capacitor fabrication with unitary sputtering processIBM·Filed 2016·Granted Nov 7, 2017·4 cites·6 claims
- 3486US9837357B1Method to reduce variability in contact resistanceIBM·Filed 2017·Granted Dec 5, 2017·4 cites·20 claims
- 3585US9922941B1Thin low defect relaxed silicon germanium layers on bulk silicon substratesIBM·Filed 2016·Granted Mar 20, 2018·3 cites·14 claims
- 3684US10109740B2Programmable bulk FinFET antifusesIBM·Filed 2016·Granted Oct 23, 2018·4 cites·19 claims
- 3784US10038050B2FinFET resistor and method to fabricate sameIBM·Filed 2017·Granted Jul 31, 2018·3 cites·12 claims
- 3884US9876075B2Method of forming dielectric with air gaps for use in semiconductor devicesIBM·Filed 2015·Granted Jan 23, 2018·3 cites·20 claims
- 3984US9859403B1Multiple step thin film deposition method for high conformalityGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 2, 2018·4 cites·19 claims
- 4083US10915811B1Intercalation cells for multi-task learningIBM·Filed 2019·Granted Feb 9, 2021·4 cites·20 claims
- 4183US10446746B1ReRAM structure formed by a single processIBM·Filed 2018·Granted Oct 15, 2019·3 cites·10 claims
- 4282US10340355B2Method of forming a dual metal interconnect structureIBM·Filed 2017·Granted Jul 2, 2019·3 cites·17 claims
- 4382US10312097B2Salicide bottom contactsIBM·Filed 2018·Granted Jun 4, 2019·2 cites·14 claims
- 4482US9954050B1Precise/designable FinFET resistor structureIBM·Filed 2016·Granted Apr 24, 2018·3 cites·11 claims
- 4581US10541202B2Programmable buried antifuseIBM·Filed 2018·Granted Jan 21, 2020·2 cites·12 claims
- 4681US10361277B2Low resistivity wrap-around contactsIBM·Filed 2018·Granted Jul 23, 2019·2 cites·8 claims
- 4781US10249501B2Single process for liner and metal fillIBM·Filed 2016·Granted Apr 2, 2019·2 cites·12 claims
- 4880US9997416B2Low resistance dual liner contacts for fin field-effect transistors (FinFETs)IBM·Filed 2017·Granted Jun 12, 2018·2 cites·20 claims
- 4979US10943988B2Thermally stable salicide formation for salicide first contactsIBM·Filed 2019·Granted Mar 9, 2021·1 cites·14 claims
- 5079US10937889B2Forming thermally stable salicide for salicide first contactsIBM·Filed 2019·Granted Mar 2, 2021·1 cites·20 claims
Showing the top 50 of 163 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →