Inventor · disambiguated record
Prasad Chaparala
Also filed as: CHAPARALA PRASAD
20 granted patents·3 pending applications·548 citations·filing 2000–2012
96Inventor score
Top patents by PatentIndex Score
23 records- 0198US6548842B1Field-effect transistor for alleviating short-channel effectsNAT SEMICONDUCTOR CORP·Filed 2000·Granted Apr 15, 2003·240 cites·84 claims
- 0296US7701005B1Semiconductor structure in which like-polarity insulated-gate field-effect transistors have multiple vertical body dopant concentration maxima and different halo pocket characteristicsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Apr 20, 2010·33 cites·22 claims
- 0394US7595244B1Fabrication of like-polarity insulated-gate field-effect transistors having multiple vertical body dopant concentration maxima and different halo pocket characteristicsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Sep 29, 2009·18 cites·38 claims
- 0494US7145191B1P-channel field-effect transistor with reduced junction capacitanceNAT SEMICONDUCTOR CORP·Filed 2004·Granted Dec 5, 2006·57 cites·58 claims
- 0593US7879669B1Fabrication of field-effect transistor with reduced junction capacitance and threshold voltage of magnitude that decreases with increasing channel lengthNAT SEMICONDUCTOR CORP·Filed 2006·Granted Feb 1, 2011·17 cites·40 claims
- 0692US6599804B2Fabrication of field-effect transistor for alleviating short-channel effectsNAT SEMICONDUCTOR CORP·Filed 2001·Granted Jul 29, 2003·57 cites·34 claims
- 0787US8735980B2Configuration and fabrication of semiconductor structure using empty and filled wellsNAT SEMICONDUCTOR CORP·Filed 2012·Granted May 27, 2014·7 cites·18 claims
- 0885US7718448B1Method of monitoring process misalignment to reduce asymmetric device operation and improve the electrical and hot carrier performance of LDMOS transistor arraysNAT SEMICONDUCTOR CORP·Filed 2005·Granted May 18, 2010·11 cites·20 claims
- 0985US6797576B1Fabrication of p-channel field-effect transistor for reducing junction capacitanceNAT SEMICONDUCTOR CORP·Filed 2002·Granted Sep 28, 2004·35 cites·26 claims
- 1084US8304835B2Configuration and fabrication of semiconductor structure using empty and filled wellsBULUCEA CONSTANTIN·Filed 2009·Granted Nov 6, 2012·8 cites·82 claims
- 1184US7785971B1Fabrication of complementary field-effect transistors with vertical body-material dopant profiles tailored to alleviate punchthrough and reduce current leakageNAT SEMICONDUCTOR CORP·Filed 2007·Granted Aug 31, 2010·6 cites·52 claims
- 1284US6797555B1Direct implantation of fluorine into the channel region of a PMOS deviceNAT SEMICONDUCTOR CORP·Filed 2003·Granted Sep 28, 2004·31 cites·8 claims
- 1376US8129262B1Fabrication of field-effect transistor with vertical body-material dopant profile tailored to alleviate punchthrough and reduce current leakageBULUCEA CONSTANTIN·Filed 2009·Granted Mar 6, 2012·3 cites·66 claims
- 1465US7170090B1Method and structure for testing metal-insulator-metal capacitor structures under high temperature at wafer levelNAT SEMICONDUCTOR CORP·Filed 2004·Granted Jan 30, 2007·11 cites·4 claims
- 1564US7700980B1Structure and fabrication of field-effect transistor for alleviating short-channel effectsNAT SEMICONDUCTOR CORP·Filed 2007·Granted Apr 20, 2010·1 cites·18 claims
- 1660US7645657B2MOS transistor and method of forming the MOS transistor with a SiON etch stop layer that protects the transistor from PID and hot carrier degradationNAT SEMICONDUCTOR CORP·Filed 2007·Granted Jan 12, 2010·1 cites·20 claims
- 1759US6927474B1Method of programming an antifuseNAT SEMICONDUCTOR CORP·Filed 2003·Granted Aug 9, 2005·11 cites·21 claims
- 1858US7390682B2Method for testing metal-insulator-metal capacitor structures under high temperature at wafer levelNAT SEMICONDUCTOR CORP·Filed 2006·Granted Jun 24, 2008·1 cites·4 claims
- 1953US2012181614A1Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction CapacitanceTENG CHIH SIEH·Filed 2011·Application pending·0 cites
- 2051US2012273880A1Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction CapacitanceTENG CHIH SIEH·Filed 2010·Application pending·0 cites
- 2151US2012181620A1Structure and Fabrication of Field-effect Transistor for Alleviating Short-channel Effects and/or Reducing Junction CapacitanceBULUCEA CONSTANTIN·Filed 2010·Application pending·0 cites
- 2249US8673720B2Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profileCHAPARALA PRASAD·Filed 2009·Granted Mar 18, 2014·0 cites·16 claims
- 2342US8253208B1Structure and fabrication of field-effect transistor having nitrided gate dielectric layer with tailored vertical nitrogen concentration profileCHAPARALA PRASAD·Filed 2011·Granted Aug 28, 2012·0 cites·26 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →