Inventor · disambiguated record
Praburam Gopalraja
Also filed as: GOPALRAJA PRABURAM
75 granted patents·26 pending applications·3,519 citations·filing 1997–2021
99Inventor score
Top patents by PatentIndex Score
101 records- 0199US6306265B1High-density plasma for ionized metal deposition capable of exciting a plasma waveAPPLIED MATERIALS INC·Filed 2000·Granted Oct 23, 2001·138 cites·22 claims
- 0298US6413382B1Pulsed sputtering with a small rotating magnetronAPPLIED MATERIALS INC·Filed 2000·Granted Jul 2, 2002·171 cites·27 claims
- 0398US6350353B2Alternate steps of IMP and sputtering process to improve sidewall coverageAPPLIED MATERIALS INC·Filed 1999·Granted Feb 26, 2002·175 cites·21 claims
- 0498US6277249B1Integrated process for copper via filling using a magnetron and target producing highly energetic ionsAPPLIED MATERIALS INC·Filed 2000·Granted Aug 21, 2001·273 cites·27 claims
- 0598US6274008B1Integrated process for copper via fillingAPPLIED MATERIALS INC·Filed 2000·Granted Aug 14, 2001·231 cites·19 claims
- 0698US6251242B1Magnetron and target producing an extended plasma region in a sputter reactorAPPLIED MATERIALS INC·Filed 2000·Granted Jun 26, 2001·287 cites·35 claims
- 0797US10957518B2Chamber with individually controllable plasma generation regions for a reactor for processing a workpieceAPPLIED MATERIALS INC·Filed 2020·Granted Mar 23, 2021·4 cites·13 claims
- 0897US7253109B2Method of depositing a tantalum nitride/tantalum diffusion barrier layer systemAPPLIED MATERIALS INC·Filed 2005·Granted Aug 7, 2007·44 cites·67 claims
- 0997US6784096B2Methods and apparatus for forming barrier layers in high aspect ratio viasAPPLIED MATERIALS INC·Filed 2002·Granted Aug 31, 2004·137 cites·73 claims
- 1097US6451177B1Vault shaped target and magnetron operable in two sputtering modesAPPLIED MATERIALS INC·Filed 2000·Granted Sep 17, 2002·103 cites·26 claims
- 1197US6444104B2Sputtering target having an annular vaultAPPLIED MATERIALS INC·Filed 2001·Granted Sep 3, 2002·85 cites·46 claims
- 1297US6436251B2Vault-shaped target and magnetron having both distributed and localized magnetsAPPLIED MATERIALS INC·Filed 2001·Granted Aug 20, 2002·89 cites·13 claims
- 1396US6358376B1Biased shield in a magnetron sputter reactorAPPLIED MATERIALS INC·Filed 2000·Granted Mar 19, 2002·81 cites·15 claims
- 1496US6221221B1Apparatus for providing RF return current path control in a semiconductor wafer processing systemAPPLIED MATERIALS INC·Filed 1998·Granted Apr 24, 2001·154 cites·20 claims
- 1595US6344419B1Pulsed-mode RF bias for sidewall coverage improvementAPPLIED MATERIALS INC·Filed 1999·Granted Feb 5, 2002·180 cites·23 claims
- 1694US6991709B2Multi-step magnetron sputtering processAPPLIED MATERIALS INC·Filed 2004·Granted Jan 31, 2006·46 cites·24 claims
- 1794US6787006B2Operating a magnetron sputter reactor in two modesAPPLIED MATERIALS INC·Filed 2002·Granted Sep 7, 2004·53 cites·31 claims
- 1894US6143140AMethod and apparatus to improve the side wall and bottom coverage in IMP process by using magnetic fieldAPPLIED MATERIALS INC·Filed 1999·Granted Nov 7, 2000·99 cites·28 claims
- 1993US7504006B2Self-ionized and capacitively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2003·Granted Mar 17, 2009·49 cites·45 claims
- 2093US6406599B1Magnetron with a rotating center magnet for a vault shaped sputtering targetAPPLIED MATERIALS INC·Filed 2000·Granted Jun 18, 2002·45 cites·24 claims
- 2192US8668816B2Self-ionized and inductively-coupled plasma for sputtering and resputteringDING PEIJUN·Filed 2007·Granted Mar 11, 2014·19 cites·16 claims
- 2292US6974771B2Methods and apparatus for forming barrier layers in high aspect ratio viasAPPLIED MATERIALS INC·Filed 2004·Granted Dec 13, 2005·46 cites·15 claims
- 2392US6673724B2Pulsed-mode RF bias for side-wall coverage improvementAPPLIED MATERIALS INC·Filed 2001·Granted Jan 6, 2004·49 cites·21 claims
- 2492US6485618B2Integrated copper fill processAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·47 cites·26 claims
- 2592US6193855B1Use of modulated inductive power and bias power to reduce overhang and improve bottom coverageAPPLIED MATERIALS INC·Filed 1999·Granted Feb 27, 2001·125 cites·26 claims
- 2691US10577689B2Sputtering showerheadAPPLIED MATERIALS INC·Filed 2017·Granted Mar 3, 2020·3 cites·20 claims
- 2791US9548201B2Self-aligned multiple spacer patterning schemes for advanced nanometer technologyAPPLIED MATERIALS INC·Filed 2015·Granted Jan 17, 2017·6 cites·14 claims
- 2891US7737028B2Selective ruthenium deposition on copper materialsAPPLIED MATERIALS INC·Filed 2008·Granted Jun 15, 2010·21 cites·21 claims
- 2991US6911124B2Method of depositing a TaN seed layerAPPLIED MATERIALS INC·Filed 2002·Granted Jun 28, 2005·52 cites·26 claims
- 3090US7686926B2Multi-step process for forming a metal barrier in a sputter reactorAPPLIED MATERIALS INC·Filed 2005·Granted Mar 30, 2010·16 cites·11 claims
- 3190US6461483B1Method and apparatus for performing high pressure physical vapor depositionAPPLIED MATERIALS INC·Filed 2000·Granted Oct 8, 2002·35 cites·22 claims
- 3289US6730196B2Auxiliary electromagnets in a magnetron sputter reactorAPPLIED MATERIALS INC·Filed 2002·Granted May 4, 2004·56 cites·20 claims
- 3389US6368469B1Coils for generating a plasma and for sputteringAPPLIED MATERIALS INC·Filed 1997·Granted Apr 9, 2002·48 cites·54 claims
- 3488US9062372B2Self-ionized and capacitively-coupled plasma for sputtering and resputteringGOPALRAJA PRABURAM·Filed 2007·Granted Jun 23, 2015·13 cites·10 claims
- 3588US6790323B2Self ionized sputtering using a high density plasma sourceAPPLIED MATERIALS INC·Filed 2001·Granted Sep 14, 2004·22 cites·36 claims
- 3688US6485617B2Sputtering method utilizing an extended plasma regionAPPLIED MATERIALS INC·Filed 2001·Granted Nov 26, 2002·37 cites·11 claims
- 3788US6254738B1Use of variable impedance having rotating core to control coil sputter distributionAPPLIED MATERIALS INC·Filed 1998·Granted Jul 3, 2001·61 cites·72 claims
- 3888US6042700AAdjustment of deposition uniformity in an inductively coupled plasma sourceAPPLIED MATERIALS INC·Filed 1997·Granted Mar 28, 2000·77 cites·21 claims
- 3987US6824658B2Partial turn coil for generating a plasmaAPPLIED MATERIALS INC·Filed 2002·Granted Nov 30, 2004·25 cites·22 claims
- 4087US6783639B2Coils for generating a plasma and for sputteringAPPLIED MATERIALS INC·Filed 2002·Granted Aug 31, 2004·21 cites·32 claims
- 4186US10047430B2Self-ionized and inductively-coupled plasma for sputtering and resputteringAPPLIED MATERIALS INC·Filed 2014·Granted Aug 14, 2018·5 cites·22 claims
- 4285US11049537B2Additive patterning of semiconductor film stacksAPPLIED MATERIALS INC·Filed 2019·Granted Jun 29, 2021·2 cites·14 claims
- 4385US10403542B2Methods of forming self-aligned vias and air gapsAPPLIED MATERIALS INC·Filed 2018·Granted Sep 3, 2019·4 cites·19 claims
- 4485US8398832B2Coils for generating a plasma and for sputteringNULMAN JAIM·Filed 2005·Granted Mar 19, 2013·10 cites·25 claims
- 4585US7704887B2Remote plasma pre-clean with low hydrogen pressureAPPLIED MATERIALS INC·Filed 2006·Granted Apr 27, 2010·10 cites·15 claims
- 4684US6723214B2Apparatus for improved power coupling through a workpiece in a semiconductor wafer processing systemAPPLIED MATERIALS INC·Filed 2002·Granted Apr 20, 2004·22 cites·22 claims
- 4784US6709553B2Multiple-step sputter depositionAPPLIED MATERIALS INC·Filed 2002·Granted Mar 23, 2004·24 cites·51 claims
- 4883US7687909B2Metal / metal nitride barrier layer for semiconductor device applicationsAPPLIED MATERIALS INC·Filed 2007·Granted Mar 30, 2010·7 cites·13 claims
- 4981US7547644B2Methods and apparatus for forming barrier layers in high aspect ratio viasAPPLIED MATERIALS INC·Filed 2005·Granted Jun 16, 2009·5 cites·30 claims
- 5080US8871064B2Electromagnet array in a sputter reactorGUNG TZA-JING·Filed 2010·Granted Oct 28, 2014·6 cites·6 claims
Showing the top 50 of 101 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Praburam Gopalraja files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →