Inventor · disambiguated record
Prashant Majhi
Also filed as: MAJHI PRASHANT
121 granted patents·46 pending applications·616 citations·filing 2004–2023
99Inventor score
Top patents by PatentIndex Score
167 records- 0198US10651153B2Three-dimensional (3D) memory with shared control circuitry using wafer-to-wafer bondingINTEL CORP·Filed 2018·Granted May 12, 2020·67 cites·17 claims
- 0297US7361538B2Transistors and methods of manufacture thereofINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 22, 2008·71 cites·9 claims
- 0396US8384122B1Tunneling transistor suitable for low voltage operationUNIV CALIFORNIA·Filed 2009·Granted Feb 26, 2013·78 cites·18 claims
- 0496US7947971B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2010·Granted May 24, 2011·24 cites·10 claims
- 0596US7928426B2Forming a non-planar transistor having a quantum well channelINTEL CORP·Filed 2007·Granted Apr 19, 2011·23 cites·11 claims
- 0695US10439134B2Techniques for forming non-planar resistive memory cellsINTEL CORP·Filed 2014·Granted Oct 8, 2019·12 cites·21 claims
- 0795US9653680B2Techniques for filament localization, edge effect reduction, and forming/switching voltage reduction in RRAM devicesINTEL CORP·Filed 2015·Granted May 16, 2017·11 cites·6 claims
- 0895US7759142B1Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2008·Granted Jul 20, 2010·29 cites·17 claims
- 0995US7435987B1Forming a type I heterostructure in a group IV semiconductorINTEL CORP·Filed 2007·Granted Oct 14, 2008·34 cites·14 claims
- 1094US10084058B2Quantum well MOSFET channels having lattice mismatch with metal source/drains, and conformal regrowth source/drainsINTEL CORP·Filed 2016·Granted Sep 25, 2018·7 cites·14 claims
- 1194US8258498B2Quantum well MOSFET channels having uni-axial strain caused by metal source/drains, and conformal regrowth source/drainsMAJHI PRASHANT·Filed 2011·Granted Sep 4, 2012·15 cites·17 claims
- 1294US7332433B2Methods of modulating the work functions of film layersSEMATECH INC·Filed 2005·Granted Feb 19, 2008·31 cites·10 claims
- 1393US10868246B2Conductive bridge random access memory (CBRAM) devices with low thermal conductivity electrolyte sublayerINTEL CORP·Filed 2016·Granted Dec 15, 2020·15 cites·23 claims
- 1492US9559215B1Method and apparatus for making p-channel thin film transistors for OLED and LED active matrix flat panel displaysAHMED KHALED·Filed 2015·Granted Jan 31, 2017·16 cites·24 claims
- 1592US8936976B2Conductivity improvements for III-V semiconductor devicesRADOSAVLJEVIC MARKO·Filed 2009·Granted Jan 20, 2015·16 cites·20 claims
- 1692US8237153B2Forming a non-planar transistor having a quantum well channelCHUI CHI ON·Filed 2011·Granted Aug 7, 2012·12 cites·12 claims
- 1791US7777282B2Self-aligned tunneling pocket in field-effect transistors and processes to form sameINTEL CORP·Filed 2008·Granted Aug 17, 2010·17 cites·31 claims
- 1890US11114471B2Thin film transistors having relatively increased width and shared bitlinesINTEL CORP·Filed 2017·Granted Sep 7, 2021·6 cites·25 claims
- 1990US7629603B2Strain-inducing semiconductor regionsINTEL CORP·Filed 2006·Granted Dec 8, 2009·18 cites·22 claims
- 2089US11145763B2Vertical switching device with self-aligned contactINTEL CORP·Filed 2018·Granted Oct 12, 2021·5 cites·24 claims
- 2189US8501508B2Method of forming quantum well mosfet channels having uni-axial strains caused by metal source/drainsMAJHI PRASHANT·Filed 2012·Granted Aug 6, 2013·7 cites·25 claims
- 2287US11094785B2Deuterium-based passivation of non-planar transistor interfacesINTEL CORP·Filed 2020·Granted Aug 17, 2021·2 cites·17 claims
- 2387US10923450B2Memory arrays with bonded and shared logic circuitryINTEL CORP·Filed 2019·Granted Feb 16, 2021·4 cites·17 claims
- 2487US10090461B2Oxide-based three-terminal resistive switching logic devicesINTEL CORP·Filed 2014·Granted Oct 2, 2018·5 cites·11 claims
- 2586US11037817B2Apparatus with multi-wafer based device and method for forming suchINTEL CORP·Filed 2017·Granted Jun 15, 2021·4 cites·16 claims
- 2685US11948831B2Apparatus with multi-wafer based device and method for forming suchINTEL CORP·Filed 2021·Granted Apr 2, 2024·1 cites·25 claims
- 2785US11233090B2Double selector element for low voltage bipolar memory devicesINTEL CORP·Filed 2017·Granted Jan 25, 2022·3 cites·17 claims
- 2884US10340275B2Stackable thin film memoryINTEL CORP·Filed 2015·Granted Jul 2, 2019·4 cites·20 claims
- 2983US11342457B2Strained thin film transistorsINTEL CORP·Filed 2017·Granted May 24, 2022·3 cites·24 claims
- 3082US10355205B2Resistive memory cells including localized filamentary channels, devices including the same, and methods of making the sameMAJHI PRASHANT·Filed 2014·Granted Jul 16, 2019·4 cites·24 claims
- 3182US9899505B2Conductivity improvements for III-V semiconductor devicesINTEL CORP·Filed 2015·Granted Feb 20, 2018·3 cites·14 claims
- 3281US11075207B2SRAM using 2T-2SINTEL CORP·Filed 2017·Granted Jul 27, 2021·5 cites·20 claims
- 3381US10811336B2Temperature management of electronic circuitry of electronic devices, memory devices, and computing devicesINTEL CORP·Filed 2018·Granted Oct 20, 2020·3 cites·11 claims
- 3481US7696517B2NMOS transistors that mitigate fermi-level pinning by employing a hafnium-silicon gate electrode and high-k gate dieletricINFINEON TECHNOLOGIES AG·Filed 2008·Granted Apr 13, 2010·7 cites·19 claims
- 3580US11222885B2Backend electrostatic discharge diode apparatus and method of fabricating the sameINTEL CORP·Filed 2018·Granted Jan 11, 2022·2 cites·21 claims
- 3679US11211489B2Low resistance field-effect transistors and methods of manufacturing the sameINTEL CORP·Filed 2017·Granted Dec 28, 2021·2 cites·20 claims
- 3777US10734513B2Heterojunction TFETs employing an oxide semiconductorINTEL CORP·Filed 2015·Granted Aug 4, 2020·2 cites·19 claims
- 3877US10658586B2RRAM devices and their methods of fabricationINTEL CORP·Filed 2016·Granted May 19, 2020·4 cites·25 claims
- 3975US10516109B2Resistive memory cells and precursors thereof, methods of making the same, and devices including the sameMUKHERJEE NILOY·Filed 2014·Granted Dec 24, 2019·2 cites·24 claims
- 4075US10388869B2Rare earth metal and metal oxide electrode interfacing of oxide memory element in resistive random access memory cellINTEL CORP·Filed 2014·Granted Aug 20, 2019·2 cites·12 claims
- 4174US11289509B2Double-gated ferroelectric field-effect transistorINTEL CORP·Filed 2017·Granted Mar 29, 2022·1 cites·20 claims
- 4273US10845609B2Diffractive optical elements for wide field-of-view virtual reality devices and methods of manufacturing the sameINTEL CORP·Filed 2018·Granted Nov 24, 2020·1 cites·22 claims
- 4373US7763511B2Dielectric barrier for nanocrystalsINTEL CORP·Filed 2006·Granted Jul 27, 2010·5 cites·21 claims
- 4472US11393526B2Thin film based 1T-1R cell with resistive random access memory below a bitlineINTEL CORP·Filed 2018·Granted Jul 19, 2022·1 cites·22 claims
- 4572US7545003B2Defect-free source/drain extensions for MOSFETS having germanium based channel regionsINTEL CORP·Filed 2007·Granted Jun 9, 2009·4 cites·6 claims
- 4671US9117893B1Tunneling transistor suitable for low voltage operationHU CHENMING·Filed 2013·Granted Aug 25, 2015·3 cites·19 claims
- 4771US8178939B2Interfacial barrier for work function modification of high performance CMOS devicesLOH WEI-YIP·Filed 2009·Granted May 15, 2012·5 cites·18 claims
- 4870US12302643B2Backend electrostatic discharge diode apparatus and method of fabricating the sameINTEL CORP·Filed 2022·Granted May 13, 2025·0 cites·20 claims
- 4970US11895846B2Double-gated ferroelectric field-effect transistorINTEL CORP·Filed 2022·Granted Feb 6, 2024·0 cites·25 claims
- 5070US11404639B2Selector devices with integrated barrier materialsINTEL CORP·Filed 2018·Granted Aug 2, 2022·1 cites·25 claims
Showing the top 50 of 167 patent records by PatentIndex Score.
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