Inventor · disambiguated record
Qhalid Fareed
Also filed as: FAREED QHALID · FAREED QHALID R S · FAREED QHALID RS
28 granted patents·10 pending applications·158 citations·filing 2003–2024
96Inventor score
Files withTEXAS INSTRUMENTS INC18KHAN ASIF7SENSOR ELECTRONIC TECH INC3ADIVARAHAN VINOD2FAREED QHALID2
Top patents by PatentIndex Score
38 records- 0194US9331240B2Utlraviolet light emitting devices and methods of fabricationKHAN M ASIF·Filed 2009·Granted May 3, 2016·28 cites·12 claims
- 0292US7429534B2Etching a nitride-based heterostructureSENSOR ELECTRONIC TECH INC·Filed 2006·Granted Sep 30, 2008·29 cites·21 claims
- 0391US11742390B2Electronic device with gallium nitride transistors and method of making sameTEXAS INSTRUMENTS INC·Filed 2020·Granted Aug 29, 2023·2 cites·20 claims
- 0491US9337023B1Buffer stack for group IIIA-N devicesTEXAS INSTRUMENTS INC·Filed 2014·Granted May 10, 2016·9 cites·9 claims
- 0587US8318562B2Method to increase breakdown voltage of semiconductor devicesKHAN M ASIF·Filed 2008·Granted Nov 27, 2012·13 cites·17 claims
- 0684US8698191B2Ultraviolet light emitting diode with AC voltage operationNITEK INC·Filed 2013·Granted Apr 15, 2014·4 cites·31 claims
- 0783US8507941B2Ultraviolet light emitting diode with AC voltage operationKHAN ASIF·Filed 2009·Granted Aug 13, 2013·9 cites·26 claims
- 0880US12142639B2Electronic device with gallium nitride transistors and method of making sameTEXAS INSTRUMENTS INC·Filed 2023·Granted Nov 12, 2024·0 cites·22 claims
- 0980US8680551B1High power ultraviolet light sources and method of fabricating the sameADIVARAHAN VINOD·Filed 2011·Granted Mar 25, 2014·4 cites·42 claims
- 1080US7192849B2Methods of growing nitride-based film using varying pulsesSENSOR ELECTRONIC TECH INC·Filed 2003·Granted Mar 20, 2007·19 cites·9 claims
- 1179US2025040208A1Electronic device with gallium nitride transistors and method of making sameTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1278US8563995B2Ultraviolet light emitting diode/laser diode with nested superlatticeKHAN ASIF·Filed 2009·Granted Oct 22, 2013·6 cites·57 claims
- 1378US8222669B2Mixed source growth apparatus and method of fabricating III-nitride ultraviolet emittersKHAN ASIF·Filed 2009·Granted Jul 17, 2012·6 cites·31 claims
- 1475US10529561B2Method of fabricating non-etch gas cooled epitaxial stack for group IIIA-N devicesTEXAS INSTRUMENTS INC·Filed 2015·Granted Jan 7, 2020·2 cites·15 claims
- 1574US11011515B2Normally off III nitride transistorTEXAS INSTRUMENTS INC·Filed 2018·Granted May 18, 2021·1 cites·16 claims
- 1674US8227322B2Methods of growing nitride-based film using varying pulsesFAREED QHALID·Filed 2007·Granted Jul 24, 2012·4 cites·19 claims
- 1774US2025063756A1P type gallium nitride conformal epitaxial structure over thick buffer layerTEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 1869US9985177B2Ultraviolet light emitting devices and methods of fabricationUNIV SOUTH CAROLINA·Filed 2016·Granted May 29, 2018·1 cites·10 claims
- 1968US8415654B2Low resistance ultraviolet light emitting device and method of fabricating the sameKHAN ASIF·Filed 2009·Granted Apr 9, 2013·3 cites·46 claims
- 2065US2021242200A1Normally off iii nitride transistorTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 2164US8354687B1Efficient thermal management and packaging for group III nitride based UV devicesNITEK INC·Filed 2009·Granted Jan 15, 2013·2 cites·32 claims
- 2264US6841809B2Heterostructure semiconductor deviceSENSOR ELECTRONIC TECH INC·Filed 2003·Granted Jan 11, 2005·11 cites·20 claims
- 2363US9343563B2Selectively area regrown III-nitride high electron mobility transistorKHAN ASIF·Filed 2014·Granted May 17, 2016·1 cites·12 claims
- 2463US8541817B2Multilayer barrier III-nitride transistor for high voltage electronicsFAREED QHALID·Filed 2010·Granted Sep 24, 2013·2 cites·73 claims
- 2562US11888027B2Monolithic integration of high and low-side GaN FETs with screening back gating effectTEXAS INSTRUMENTS INC·Filed 2021·Granted Jan 30, 2024·0 cites·20 claims
- 2662US8692293B2Method to increase breakdown voltage of semiconductor devicesUNIV SOUTH CAROLINA·Filed 2012·Granted Apr 8, 2014·1 cites·10 claims
- 2761US9142714B2High power ultraviolet light emitting diode with superlatticeADIVARAHAN VINOD·Filed 2012·Granted Sep 22, 2015·1 cites·14 claims
- 2860US12170328B2P type gallium nitride conformal epitaxial structure over thick buffer layerTEXAS INSTRUMENTS INC·Filed 2020·Granted Dec 17, 2024·0 cites·17 claims
- 2958US9847223B2Buffer stack for group IIIA-N devicesTEXAS INSTRUMENTS INC·Filed 2017·Granted Dec 19, 2017·0 cites·18 claims
- 3055US9590086B2Buffer stack for group IIIA-N devicesTEXAS INSTRUMENTS INC·Filed 2016·Granted Mar 7, 2017·0 cites·8 claims
- 3152US2023411461A1Gan device with extended drain contactTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3252US2024105450A1Group iii-v semiconductor device and method of fabrication of same including in-situ surface passivationTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 3350US8796097B2Selectively area regrown III-nitride high electron mobility transistorKHAN ASIF·Filed 2013·Granted Aug 5, 2014·0 cites·21 claims
- 3449US2023134698A1Apparatus and method to control threshold voltage and gate leakage current for gan-based semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2021·Application pending·0 cites
- 3549US2016293596A1Normally off iii-nitride transistorTEXAS INSTRUMENTS INC·Filed 2015·Application pending·0 cites
- 3647US2011220867A1Superlattice free ultraviolet emitterKHAN ASIF·Filed 2009·Application pending·0 cites
- 3745US2022130988A1Electronic device with enhancement mode gallium nitride transistor, and method of making sameTEXAS INSTRUMENTS INC·Filed 2020·Application pending·0 cites
- 3839US2019288089A9Methods for transistor epitaxial stack fabricationTEXAS INSTRUMENTS INC·Filed 2017·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →