Inventor · disambiguated record
Qingqing Liang
Also filed as: LIANG QINGQING
137 granted patents·31 pending applications·375 citations·filing 2006–2023
99Inventor score
Top patents by PatentIndex Score
168 records- 0198US11081559B1Backside contact of a semiconductor deviceQUALCOMM INC·Filed 2020·Granted Aug 3, 2021·21 cites·20 claims
- 0293US9087691B2Method for manufacturing graphene nano-ribbon, mosfet and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jul 21, 2015·14 cites·11 claims
- 0393US8110465B2Field effect transistor having an asymmetric gate electrodeZHU HUILONG·Filed 2007·Granted Feb 7, 2012·19 cites·15 claims
- 0491US9882066B1Transcap manufacturing techniques without a silicide-blocking maskQUALCOMM INC·Filed 2017·Granted Jan 30, 2018·6 cites·22 claims
- 0591US7813162B2SRAM cell having asymmetric pass gatesIBM·Filed 2008·Granted Oct 12, 2010·17 cites·16 claims
- 0689US9070719B2Semiconductor device structure, method for manufacturing the same, and method for manufacturing FinZHONG HUICAI·Filed 2011·Granted Jun 30, 2015·11 cites·13 claims
- 0789US8592911B2Asymmetric semiconductor device having a high-k/metal gate and method of manufacturing the sameLIANG QINGQING·Filed 2010·Granted Nov 26, 2013·11 cites·9 claims
- 0889US7897468B1Device having self-aligned double gate formed by backside engineering, and device having super-steep retrograded islandIBM·Filed 2009·Granted Mar 1, 2011·15 cites·21 claims
- 0989US7820530B2Efficient body contact field effect transistor with reduced body resistanceFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 26, 2010·15 cites·20 claims
- 1088US8492206B2Semiconductor device structure and method for manufacturing the sameZHONG HUICAI·Filed 2011·Granted Jul 23, 2013·10 cites·17 claims
- 1186US11081582B2High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technologyQUALCOMM INC·Filed 2020·Granted Aug 3, 2021·2 cites·8 claims
- 1286US8587066B2Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)ZHU HUILONG·Filed 2012·Granted Nov 19, 2013·7 cites·19 claims
- 1385US7838913B2Hybrid FET incorporating a finFET and a planar FETIBM·Filed 2008·Granted Nov 23, 2010·11 cites·20 claims
- 1484US10522626B2Silicon-on-insulator backside contactsQUALCOMM INC·Filed 2018·Granted Dec 31, 2019·3 cites·10 claims
- 1584US9425288B2Method of manufacturing semiconductor deviceZHONG HUICAI·Filed 2012·Granted Aug 23, 2016·6 cites·15 claims
- 1684US8673704B2FinFET and method for manufacturing the sameZHU HUILONG·Filed 2012·Granted Mar 18, 2014·7 cites·10 claims
- 1784US8513742B2Method for manufacturing contact and semiconductor device having said contactZHONG HUICAI·Filed 2011·Granted Aug 20, 2013·7 cites·7 claims
- 1884US8138029B2Structure and method having asymmetrical junction or reverse halo profile for semiconductor on insulator (SOI) metal oxide semiconductor field effect transistor (MOSFET)ZHU HUILONG·Filed 2010·Granted Mar 20, 2012·6 cites·19 claims
- 1984US8105887B2Inducing stress in CMOS deviceLUO ZHIJIONG·Filed 2009·Granted Jan 31, 2012·9 cites·7 claims
- 2084US7646039B2SOI field effect transistor having asymmetric junction leakageIBM·Filed 2007·Granted Jan 12, 2010·9 cites·13 claims
- 2183US8936988B2Methods for manufacturing a MOSFET using a stress liner of diamond-like carbon on the substrateINST OF MICROELECTRONICS CAS·Filed 2014·Granted Jan 20, 2015·5 cites·14 claims
- 2282US8658507B2MOSFET structure and method of fabricating the same using replacement channel layerZHU HUILONG·Filed 2010·Granted Feb 25, 2014·6 cites·16 claims
- 2382US8633096B2Creating anisotropically diffused junctions in field effect transistor devicesGREENE BRIAN J·Filed 2010·Granted Jan 21, 2014·5 cites·13 claims
- 2480US10896958B2Silicon-on-insulator backside contactsQUALCOMM INC·Filed 2019·Granted Jan 19, 2021·2 cites·10 claims
- 2579US9349867B2Semiconductor devices and methods for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2012·Granted May 24, 2016·4 cites·20 claims
- 2679US9013918B2Two-terminal memory cell and semiconductor memory device based on different states of stable currentLIANG QINGQING·Filed 2011·Granted Apr 21, 2015·6 cites·4 claims
- 2779US8987136B2Semiconductor device and method for manufacturing local interconnect structure thereofZHONG HUICAI·Filed 2011·Granted Mar 24, 2015·5 cites·12 claims
- 2879US8859378B2Fin field-effect transistor and method for manufacturing the sameLIANG QINGQING·Filed 2011·Granted Oct 14, 2014·5 cites·17 claims
- 2978US8610248B2Capacitor structure and method of manufactureLIANG QINGQING·Filed 2010·Granted Dec 17, 2013·5 cites·9 claims
- 3078US7829939B1MOSFET including epitaxial halo regionIBM·Filed 2009·Granted Nov 9, 2010·5 cites·15 claims
- 3177US9397007B2Method for manufacturing semiconductor structure through forming an additional layer inside opening of a photoresist layerINST OF MICROELECTRONICS CAS·Filed 2013·Granted Jul 19, 2016·3 cites·5 claims
- 3277US8673701B2Semiconductor structure and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Mar 18, 2014·4 cites·14 claims
- 3377US7670896B2Method and structure for reducing floating body effects in MOSFET devicesIBM·Filed 2006·Granted Mar 2, 2010·5 cites·2 claims
- 3476US10707866B1Capacitance balance in dual sided contact switchQUALCOMM INC·Filed 2018·Granted Jul 7, 2020·2 cites·20 claims
- 3576US8652884B2Semiconductor device structure and method for manufacturing the sameZHONG HUICAI·Filed 2011·Granted Feb 18, 2014·4 cites·10 claims
- 3676US8481379B2Method for manufacturing fin field-effect transistorLIANG QINGQING·Filed 2011·Granted Jul 9, 2013·4 cites·17 claims
- 3776US8441045B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted May 14, 2013·3 cites·21 claims
- 3876US8343818B2Method for forming retrograded well for MOSFETIBM·Filed 2010·Granted Jan 1, 2013·3 cites·19 claims
- 3975US9653358B2Semiconductor device structure and method for manufacturing the sameZHONG HUICAI·Filed 2011·Granted May 16, 2017·4 cites·17 claims
- 4075US9397104B2SRAM cell and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jul 19, 2016·4 cites·9 claims
- 4175US9293377B2Semiconductor device structure and method for manufacturing the sameZHONG HUICAI·Filed 2011·Granted Mar 22, 2016·4 cites·8 claims
- 4275US8933512B2MOSFET and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jan 13, 2015·4 cites·8 claims
- 4375US8557677B2Stack-type semiconductor device and method for manufacturing the sameLIANG QINGQING·Filed 2011·Granted Oct 15, 2013·3 cites·4 claims
- 4475US8456169B2High speed measurement of random variation/yield in integrated circuit device testingBHUSHAN MANJUL·Filed 2010·Granted Jun 4, 2013·3 cites·20 claims
- 4575US8169026B2Stress-induced CMOS deviceLUO ZHIJIONG·Filed 2011·Granted May 1, 2012·3 cites·13 claims
- 4673US9064954B2Semiconductor devices and methods for manufacturing the sameZHU HUILONG·Filed 2012·Granted Jun 23, 2015·3 cites·5 claims
- 4773US8466500B2Semiconductor device and method for manufacturing the sameZHU HUILONG·Filed 2011·Granted Jun 18, 2013·3 cites·12 claims
- 4872US10748934B2Silicon on insulator with multiple semiconductor thicknesses using layer transferQUALCOMM INC·Filed 2018·Granted Aug 18, 2020·1 cites·18 claims
- 4972US9379056B2Semiconductor structure and method for manufacturing the sameINST OF MICROELECTRONICS CAS·Filed 2012·Granted Jun 28, 2016·2 cites·10 claims
- 5072US9024435B2Semiconductor device, formation method thereof, and package structureZHONG HUICAI·Filed 2011·Granted May 5, 2015·3 cites·5 claims
Showing the top 50 of 168 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →