Inventor · disambiguated record
Qinli Ma
Also filed as: MA QINLI
11 granted patents·3 pending applications·31 citations·filing 2011–2022
85Inventor score
Top patents by PatentIndex Score
14 records- 0189US11114605B2Composite storage layer for magnetic random access memory devicesHEFECHIP CORPORATION LTD·Filed 2019·Granted Sep 7, 2021·3 cites·26 claims
- 0286US10103321B2Magnetoresistive element and magnetic memoryTOSHIBA KK·Filed 2016·Granted Oct 16, 2018·5 cites·22 claims
- 0384US9568564B2Magnetic nano-multilayers for magnetic sensors and manufacturing method thereofMA QINLI·Filed 2011·Granted Feb 14, 2017·13 cites·24 claims
- 0479US10559747B1Topological insulator-based high efficiency switching of magnetic unit, method and applicationsUNIV JOHNS HOPKINS·Filed 2017·Granted Feb 11, 2020·5 cites·20 claims
- 0578US9899071B2Heavy metal multilayers for switching of magnetic unit via electrical current without magnetic field, method and applicationsUNIV JOHNS HOPKINS·Filed 2017·Granted Feb 20, 2018·3 cites·20 claims
- 0668US11456411B2Method for fabricating magnetic tunneling junction element with a composite capping layerHEFECHIP CORPORATION LTD·Filed 2019·Granted Sep 27, 2022·2 cites·6 claims
- 0759US12108684B2Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the sameHEFECHIP CORPORATION LTD·Filed 2021·Granted Oct 1, 2024·0 cites·36 claims
- 0859US11342496B2Semiconductor memory structure with magnetic tunneling junction stack and method for forming the sameHEFECHIP CORPORATION LTD·Filed 2020·Granted May 24, 2022·0 cites·18 claims
- 0954US11538986B2Asymmetric engineered storage layer of magnetic tunnel junction element for magnetic memory deviceHEFECHIP CORPORATION LTD·Filed 2020·Granted Dec 27, 2022·0 cites·28 claims
- 1051US2024081155A1Magnetic tunnel junction structure with non-magnetic amorphous insertion layerHEFECHIP CORPORATION LTD·Filed 2022·Application pending·0 cites
- 1150US11763972B2Magnetic tunnel junction element with a robust reference layerHEFECHIP CORPORATION LTD·Filed 2021·Granted Sep 19, 2023·0 cites·16 claims
- 1248US2020052191A1Magnetic tunnel junction element with a robust reference layerHEFECHIP CORPORATION LTD·Filed 2019·Application pending·0 cites
- 1344US10650873B23D perpendicular magnetic crossbar memoryUNIV CARNEGIE MELLON·Filed 2018·Granted May 12, 2020·0 cites·24 claims
- 1439US2021020215A1Magnetic tunneling junction element with a composite capping layer and magnetoresistive random access memory device using the sameHEFECHIP CORPORATION LTD·Filed 2019·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →