Inventor · disambiguated record
Qihao Zhu
Also filed as: ZHU QIHAO
2 granted patents·13 pending applications·2 citations·filing 2021–2025
33Inventor score
Top patents by PatentIndex Score
15 records- 0183US11321410B2Information recommendation method and apparatus, device, and storage mediumTENCENT TECH SHENZHEN CO LTD·Filed 2021·Granted May 3, 2022·2 cites·20 claims
- 0265US2025372449A1Methods for forming low resistivity contactsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0365US2025372448A1Methods for forming low resistivity contactsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0465US2025372450A1Methods for forming low resistivity contactsAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 0560US2025006552A1Bottom-up gap fill processes for semiconductor substratesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0657US2025157824A1Selective metal Capping with Metal Halide enhancementAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 0756US2025125195A1Oligomer film for bottom-up gap fill processesAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 0855US2024371654A1Silicon nitride damage-free dry etch method for tungsten removal in middle of line bottom-up tungsten integrationAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 0954US2024363407A1Low-energy underlayer for room temperature physical vapor deposition of electrically conductive featuresAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1053US2025112091A1Surface treatment enabling super-conformal metal cap profile on middle of-line (mol) silicidesAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1152US2025174456A1Thermal cvd of titanium silicide methods to form semiconductor structuresAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1251US2025054767A1Selective metal capping processes for a junction silicideAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1350US2025054812A1Selective bottom-up metal fill/cap on junction silicide by selective metal removalAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1450US2025079239A1Selective capping for gate-all-around field effect transistorsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1540US12277486B2Defect location method and device based on coverage informationUNIV BEIJING·Filed 2021·Granted Apr 15, 2025·0 cites·6 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →