Inventor · disambiguated record
Rainer Bruchhaus
Also filed as: BRUCHHAUS RAINER
35 granted patents·13 pending applications·429 citations·filing 1994–2012
97Inventor score
Top patents by PatentIndex Score
48 records- 0191US6108191AMultilayer capacitor with high specific capacitance and production process thereforSIEMENS AG·Filed 1998·Granted Aug 22, 2000·141 cites·9 claims
- 0279US8063394B2Integrated circuitANDRES DIETER·Filed 2008·Granted Nov 22, 2011·12 cites·9 claims
- 0379US5684302APyrodetector element having a pyroelectric layer produced by oriented growth, and method for the fabrication of the elementSIEMENS AG·Filed 1994·Granted Nov 4, 1997·48 cites·10 claims
- 0475US6573542B2Capacitor electrodes arrangement with oxygen iridium between silicon and oxygen barrier layerINFINEON TECHNOLOGIES AG·Filed 2001·Granted Jun 3, 2003·18 cites·16 claims
- 0571US6746877B1Encapsulation of ferroelectric capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 8, 2004·14 cites·16 claims
- 0669US7361549B2Method for fabricating memory cells for a memory deviceINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 22, 2008·3 cites·21 claims
- 0767US6300652B1Memory cell configuration and method for its productionINFINEON TECHNOLOGIES AG·Filed 1996·Granted Oct 9, 2001·27 cites·24 claims
- 0866US5403752AMethod for manufacturing a pyrodetector apparatusSIEMENS AG·Filed 1994·Granted Apr 4, 1995·25 cites·25 claims
- 0965US6800890B1Memory architecture with series grouped by cellsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Oct 5, 2004·14 cites·14 claims
- 1063US6139971AStratified structure with a ferroelectric layer and process for producing the sameSIEMENS AG·Filed 1997·Granted Oct 31, 2000·23 cites·11 claims
- 1161US7041551B2Device and a method for forming a capacitor deviceINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 9, 2006·9 cites·24 claims
- 1261US6773986B2Method for fabricating a semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Aug 10, 2004·10 cites·25 claims
- 1360US7348619B2Ferroelectric memory arrangementINFINEON TECHNOLOGIES AG·Filed 2005·Granted Mar 25, 2008·4 cites·15 claims
- 1459US7456456B2Semiconductor device and method of manufacturing the sameTOSHIBA KK·Filed 2006·Granted Nov 25, 2008·1 cites·4 claims
- 1558US7378700B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2006·Granted May 27, 2008·1 cites·10 claims
- 1657US6858492B2Method for fabricating a semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 22, 2005·8 cites·50 claims
- 1756US7199002B2Process for fabrication of a ferroelectric capacitorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Apr 3, 2007·5 cites·2 claims
- 1856US6815234B2Reducing stress in integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 9, 2004·8 cites·10 claims
- 1953US9001558B2Method for nondestructively reading resistive memory elementsROSEZIN ROLAND DANIEL·Filed 2012·Granted Apr 7, 2015·3 cites·12 claims
- 2052US6940111B2Radiation protection in integrated circuitsINFINEON TECHNOLOGIES AG·Filed 2002·Granted Sep 6, 2005·5 cites·13 claims
- 2151US6946735B2Side-wall barrier structure and method of fabricationINFINEON AG·Filed 2002·Granted Sep 20, 2005·5 cites·15 claims
- 2251US5939722ASemiconductor detector for infrared radiation and method for manufacturing sameSIEMENS AG·Filed 1997·Granted Aug 17, 1999·17 cites·23 claims
- 2346US7316980B2Method for forming ferrocapacitors and FeRAM devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 8, 2008·1 cites·16 claims
- 2446US7198959B2Process for fabrication of a ferrocapacitorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Apr 3, 2007·1 cites·18 claims
- 2546US7098142B2Method of etching ferroelectric devicesINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 29, 2006·1 cites·6 claims
- 2644US7061035B2Self-aligned V0-contact for cell size reductionINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 13, 2006·1 cites·1 claims
- 2744US6839220B1Multi-layer barrier allowing recovery anneal for ferroelectric capacitorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jan 4, 2005·2 cites·16 claims
- 2843US2009190388A1Resistive memory and methods for forming sameBRUCHHAUS RAINER·Filed 2008·Application pending·0 cites
- 2942US6704219B2FeRAM memory and method for manufacturing itINFINEON TECHNOLOGIES AG·Filed 2002·Granted Mar 9, 2004·1 cites·36 claims
- 3041US6440210B1Method for producing self-polarized ferro-electric layers, especially PZT layers, with a rhombohedral crystal structureSIEMENS AG·Filed 1999·Granted Aug 27, 2002·10 cites·18 claims
- 3139US7522444B2Memory circuit, method for operating a memory circuit, memory device and method for producing a memory deviceINFINEON TECHNOLOGIES AG·Filed 2006·Granted Apr 21, 2009·0 cites·26 claims
- 3239US6867053B2Fabrication of a FeRAM capacitor using a noble metal hardmaskINFINEON TECHNOLOGIES AG·Filed 2003·Granted Mar 15, 2005·0 cites·7 claims
- 3339US2005274999A1Semiconductor device and method of manufacturing the sameINFINEON TECHNOLOGIES AG·Filed 2004·Application pending·0 cites
- 3438US7183121B2Process for fabrication of a ferrocapacitorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 27, 2007·0 cites·6 claims
- 3538US6316802B1Easy to manufacture integrated semiconductor memory configuration with platinum electrodesINFINEON TECHNOLOGIES AG·Filed 1999·Granted Nov 13, 2001·5 cites·9 claims
- 3637US6346424B1Process for producing high-epsilon dielectric layer or ferroelectric layerINFINEON TECHNOLOGIES AG·Filed 1999·Granted Feb 12, 2002·6 cites·11 claims
- 3737US2004171274A1Method for formation of hardmask elements during a semiconductor device fabrication processFiled 2003·Application pending·0 cites
- 3836US2004087080A1Methods for producing thin layers, such as for use in integrated circuitsFiled 2002·Application pending·0 cites
- 3936US2003164450A1Thermal radiation detection device, method for producing the same and use of said deviceFiled 2001·Application pending·0 cites
- 4036US2004163233A1Methods of forming electrical connections within ferroelectric devicesFiled 2003·Application pending·0 cites
- 4135US2002017676A1Microelectronic structureFiled 2001·Application pending·0 cites
- 4235US2008073751A1Memory cell and method of manufacturing thereofBRUCHHAUS RAINER·Filed 2006·Application pending·0 cites
- 4335US2005084984A1Method for forming ferrocapacitors and FeRAM devicesFiled 2003·Application pending·0 cites
- 4435US2010001252A1Resistance Changing Memory CellSYMANCZYK RALF·Filed 2008·Application pending·0 cites
- 4534US2001024868A1Microelectronic structure and method of fabricating itFiled 2000·Application pending·0 cites
- 4634US2003224536A1Contact formationFiled 2002·Application pending·0 cites
- 4734US2004201049A1Suppression of electrode re-crystallisation in a ferrocapacitorFiled 2003·Application pending·0 cites
- 4833US6818503B2Method for fabricating a semiconductor memory deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Nov 16, 2004·0 cites·25 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →