Microelectronic structure

Abstract

A microelectronic structure is described which contains a first conductive layer for preventing oxygen diffusion at the structure. The first conductive layer contains a base material and at least one oxygen-binding admixture that is provided with at least one element from the fourth subgroup or the lanthane group. In a preferred embodiment, the microelectronic structure is used in semiconductor storage components with a metal oxide dielectric as a condenser dielectric.

We claim:  
     
         1 . A microelectronic structure, comprising: 
 at least one substrate;    a first conductive layer disposed on said substrate, said first conductive layer composed of at least one basic material having at least one oxygen-bonding additive containing at least one element selected from the group consisting of Group IVb elements and lanthanum group elements;    a second conductive layer disposed on said first conductive layer and containing a noble metal; and    a metal oxide dielectric at least partially covering said second conductive layer.    
     
     
         2 . The microelectronic structure according to  claim 1 , wherein said oxygen-bonding additive is selected from the group consisting of zirconium, hafnium, cerium and a combination of zirconium, hafnium and cerium.  
     
     
         3 . The microelectronic structure according to  claim 1 , wherein said oxygen-bonding additive forms a proportion by weight of said first conductive layer of between 0.5% and 20%.  
     
     
         4 . The microelectronic structure according to  claim 1 , wherein said basic material is a noble metal selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium, rhenium, a conductive oxide of the abovementioned metals, and a mixture of the abovementioned compounds and elements.  
     
     
         5 . The microelectronic structure according to  claim 1 , including a barrier layer disposed between said first conductive layer and said substrate.  
     
     
         6 . The microelectronic structure according to  claim 5 , wherein said barrier layer contains titanium.  
     
     
         7 . The microelectronic structure according to  claim 1 , wherein said noble metal is platinum.  
     
     
         8 . The microelectronic structure according to  claim 1 , wherein said oxygen-bonding additive forms a proportion by weight of said first conductive layer of between 1% and 10%.  
     
     
         9 . A method for producing a microelectronic structure, which comprises the steps of: 
 preparing a substrate;    simultaneously applying a basic material and a oxygen-bonding additive to the substrate to form a first conductive layer, the oxygen-bonding additive containing at least one element selected from the group consisting of Group IVb elements and lanthanum group elements;    depositing a second conductive layer onto the first conductive layer, the second conductive layer containing a noble metal; and    applying a metal oxide dielectric to the second conductive layer.    
     
     
         10 . The method according to  claim 9 , which comprises applying the basic material and the oxygen-bonding additive to the substrate by a physical sputtering method using a common source.  
     
     
         11 . The method according to  claim 9 , wherein the basic material is formed from a noble metal selected from the group consisting of platinum, palladium, rhodium, iridium, ruthenium, osmium, rhenium, a conductive oxide of the abovementioned metals, and a mixture of the abovementioned compounds and elements.  
     
     
         12 . The method according to  claim 9 , wherein the oxygen-bonding additive forms a proportion by weight of the first conductive layer of between 0.5% and 20%.  
     
     
         13 . The method according to  claim 9 , wherein the oxygen-bonding additive forms a proportion by weight of the first conductive layer of between 1% and 10%.  
     
     
         14 . The method according to  claim 9 , which comprises using one of zirconium, hafnium, cerium and a combination of zirconium, hafnium and cerium as the oxygen-bonding additive.  
     
     
         15 . A method of producing a memory circuit, which comprises the steps of: 
 forming a microelectronic structure containing: 
 at least one substrate;  
 a first conductive layer disposed on the substrate, the first conductive layer composed of at least one basic material having at least one oxygen-bonding additive containing at least one element selected from the group consisting of Group IVb elements and lanthanum group elements;  
 a second conductive layer disposed on the first conductive layer and containing a noble metal; and  
 a metal oxide dielectric at least partially covering the second conductive layer;  
   using the microelectronic structure to form a first part of a storage capacitor, the first conductive layer forming a first capacitor electrode; and    providing a second electrode disposed on the metal oxide dielectric for forming a second part of the storage capacitor.