Inventor · disambiguated record
Rajneesh Jaiswal
Also filed as: JAISWAL RAJNEESH
9 granted patents·3 pending applications·89 citations·filing 2001–2009
86Inventor score
Top patents by PatentIndex Score
12 records- 0192US7964517B2Use of a biased precoat for reduced first wafer defects in high-density plasma processTEXAS INSTRUMENTS INC·Filed 2009·Granted Jun 21, 2011·32 cites·12 claims
- 0279US6734076B1Method for thin film resistor integration in dual damascene structureTEXAS INSTRUMENTS INC·Filed 2003·Granted May 11, 2004·30 cites·13 claims
- 0363US7354854B2Nickel silicide method and structureTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 8, 2008·3 cites·6 claims
- 0459US7323751B2Thin film resistor integration in a dual damascene structureTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 29, 2008·9 cites·14 claims
- 0550US6517235B2Using refractory metal silicidation phase transition temperature points to control and/or calibrate RTP low temperature operationCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Feb 11, 2003·9 cites·25 claims
- 0648US6664166B1Control of nichorme resistor temperature coefficient using RF plasma sputter etchTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 16, 2003·6 cites·12 claims
- 0746US2008248599A1Rapid Thermal Anneal Equipment and Method Using Sichrome FilmTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 0844US7384855B2Resistor integration structure and technique for noise eliminationTEXAS INSTRUMENTS INC·Filed 2006·Granted Jun 10, 2008·0 cites·11 claims
- 0943US2010167552A1Methods for particle removal during integrated circuit device fabricationTEXAS INSTRUMENTS INC·Filed 2008·Application pending·0 cites
- 1041US7196398B2Resistor integration structure and technique for noise eliminationTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 27, 2007·0 cites·9 claims
- 1136US7455448B2Rapid thermal anneal equipment and method using sichrome filmTEXAS INSTRUMENTS INC·Filed 2004·Granted Nov 25, 2008·0 cites·23 claims
- 1227US2004087047A1Control of nichrome resistor temperature coefficient using RF plasma sputter etchFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →