Inventor · disambiguated record
Rami Khazaka
Also filed as: KHAZAKA RAMI
16 granted patents·18 pending applications·6 citations·filing 2017–2025
86Inventor score
Top patents by PatentIndex Score
34 records- 0191US12266695B2Structures with doped semiconductor layers and methods and systems for forming sameASM IP HOLDING BV·Filed 2023·Granted Apr 1, 2025·1 cites·19 claims
- 0289US11495459B2Methods for selective deposition using a sacrificial capping layerASM IP HOLDING BV·Filed 2020·Granted Nov 8, 2022·2 cites·9 claims
- 0384US11781243B2Method for depositing low temperature phosphorous-doped siliconASM IP HOLDING BV·Filed 2021·Granted Oct 10, 2023·1 cites·19 claims
- 0483US11594600B2Structures with doped semiconductor layers and methods and systems for forming sameASM IP HOLDING BV·Filed 2020·Granted Feb 28, 2023·1 cites·19 claims
- 0579US11688603B2Methods of forming silicon germanium structuresASM IP HOLDING BV·Filed 2020·Granted Jun 27, 2023·1 cites·20 claims
- 0673US2025273464A1Method for depositing boron and gallium containing silicon germanium layersASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 0772US2025176236A1Structures with doped semiconductor layers and methods and systems for forming sameASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 0866US2023026413A1Methods for selective deposition using a sacrificial capping layerASM IP HOLDING BV·Filed 2022·Application pending·0 cites
- 0966US2025327209A1Systems, methods, and vessels for epitaxial depositionsASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 1064US2025157814A1Method for depositing boron containing silicon germaniuim layersASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 1163US12266524B2Method for depositing boron containing silicon germanium layersASM IP HOLDING BV·Filed 2021·Granted Apr 1, 2025·0 cites·12 claims
- 1262US12406846B2Method for depositing boron and gallium containing silicon germanium layersASM IP HOLDING BV·Filed 2021·Granted Sep 2, 2025·0 cites·17 claims
- 1360US12421620B2Structures with boron- and gallium-doped silicon germanium layers and methods and systems for forming sameASM IP HOLDING BV·Filed 2023·Granted Sep 23, 2025·0 cites·20 claims
- 1460US2025327174A1Gas injection systems for supplying gas into a reaction chamber and semiconductor processing system including gas injection systemsASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 1559US11946157B2Method for depositing boron containing silicon germanium layersASM IP HOLDING BV·Filed 2022·Granted Apr 2, 2024·0 cites·18 claims
- 1659US2024379353A1Method of forming an epitaxial stack and substrate processing apparatus for forming the sameASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 1759US2024203730A1Method of forming an epitaxial layerASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 1857US2025174457A1Methods for depositing a boron doped silicon germanium layer and associated compositionsASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 1956US2024006176A1Method of forming p-type doped silicon-germanium layers and system for forming sameASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 2055US2024087888A1Method of forming a si-comprising epitaxial layer selectively on a substrateASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 2154US2023005744A1Forming structures with bottom-up fill techniquesASM IP HOLDING BV·Filed 2022·Application pending·0 cites
- 2254US2023352301A1Method of selectively forming crystalline boron-doped silicon germanium on a surfaceASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 2354US2024096619A1Method of selectively forming phosphorous-doped epitaxial material on a surfaceASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 2453US11646205B2Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using sameASM IP HOLDING BV·Filed 2020·Granted May 9, 2023·0 cites·24 claims
- 2551US2024203734A1Methods for forming multilayer structures on a substrate and related multilayer structuresASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 2650US12362174B2Method and wafer processing furnace for forming an epitaxial stack on a plurality of substratesASM IP HOLDING BV·Filed 2023·Granted Jul 15, 2025·0 cites·19 claims
- 2748US11637014B2Methods for selective deposition of doped semiconductor materialASM IP HOLDING BV·Filed 2020·Granted Apr 25, 2023·0 cites·18 claims
- 2848US2024213022A1Method for depositing phosphorus containing silicon layerASM IP HOLDING BV·Filed 2023·Application pending·0 cites
- 2946US2025226202A1Method and device for etching a substrate and method and apparatus for processing a substrateASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 3042US10472230B2Process for fabricating a micromechanical structure made of silicon carbide including at least one cavityCENTRE NAT RECH SCIENT·Filed 2017·Granted Nov 12, 2019·0 cites·15 claims
- 3141US2020144443A1Method for producing a photodiode and photodiodeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Application pending·0 cites
- 3240US10944235B2Method for producing a light source and light sourceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Mar 9, 2021·0 cites·23 claims
- 3339US10622210B2Method of producing an element of a microelectronic deviceCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Apr 14, 2020·0 cites·23 claims
- 3439US10553741B2Method for producing a photodiode and photodiodeCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2019·Granted Feb 4, 2020·0 cites·24 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →