Inventor · disambiguated record
Rajendran Krishnasamy
Also filed as: KRISHNASAMY RAJENDRAN
66 granted patents·26 pending applications·133 citations·filing 2004–2024
98Inventor score
Top patents by PatentIndex Score
92 records- 0194US11972999B2Unlanded thermal dissipation pillar adjacent active contactGLOBALFOUNDRIES US INC·Filed 2021·Granted Apr 30, 2024·2 cites·20 claims
- 0292US11721719B2Heterojunction bipolar transistor with buried trap rich isolation regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 8, 2023·2 cites·8 claims
- 0391US11949034B2Photodetector with dual doped semiconductor materialGLOBALFOUNDRIES US INC·Filed 2022·Granted Apr 2, 2024·1 cites·20 claims
- 0490US7144787B2Methods to improve the SiGe heterojunction bipolar device performanceIBM·Filed 2005·Granted Dec 5, 2006·16 cites·17 claims
- 0588US11437522B2Field-effect transistors with a polycrystalline body in a shallow trench isolation regionGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 6, 2022·2 cites·14 claims
- 0688US8298853B2CMOS pixel sensor cells with poly spacer transfer gates and methods of manufactureADKISSON JAMES W·Filed 2010·Granted Oct 30, 2012·6 cites·24 claims
- 0788US7800147B2CMOS image sensor with reduced dark currentIBM·Filed 2008·Granted Sep 21, 2010·9 cites·13 claims
- 0887US11127816B2Heterojunction bipolar transistors with one or more sealed airgapGLOBALFOUNDRIES US INC·Filed 2020·Granted Sep 21, 2021·2 cites·20 claims
- 0987US7825003B2Method of doping field-effect-transistors (FETs) with reduced stress/strain relaxation and resulting FET devicesIBM·Filed 2007·Granted Nov 2, 2010·14 cites·14 claims
- 1084US7170083B2Bipolar transistor with collector having an epitaxial Si:C regionIBM·Filed 2005·Granted Jan 30, 2007·9 cites·7 claims
- 1183US7750371B2Silicon germanium heterojunction bipolar transistor structure and methodIBM·Filed 2007·Granted Jul 6, 2010·6 cites·21 claims
- 1283US7476914B2Methods to improve the SiGe heterojunction bipolar device performanceIBM·Filed 2006·Granted Jan 13, 2009·8 cites·7 claims
- 1381US11322639B2Avalanche photodiodeGLOBALFOUNDRIES US INC·Filed 2020·Granted May 3, 2022·1 cites·19 claims
- 1480US12170313B2Heterojunction bipolar transistor with buried trap rich isolation regionGLOBALFOUNDRIES US INC·Filed 2023·Granted Dec 17, 2024·0 cites·20 claims
- 1580US2025015128A1Heterojunction bipolar transistor with buried trap rich isolation regionGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 1678US8105861B2CMOS image sensor with reduced dark currentADKISSON JAMES W·Filed 2010·Granted Jan 31, 2012·1 cites·7 claims
- 1777US11664470B2Photodiode with integrated, self-aligned light focusing elementGLOBALFOUNDRIES US INC·Filed 2022·Granted May 30, 2023·0 cites·19 claims
- 1877US8009216B2Pixel sensor cell with frame storage capabilityIBM·Filed 2008·Granted Aug 30, 2011·5 cites·17 claims
- 1976US8063449B2Semiconductor devices and methods of manufacture thereofHAN JIN-PING·Filed 2009·Granted Nov 22, 2011·6 cites·22 claims
- 2076US7732845B2Pixel sensor with reduced image lagIBM·Filed 2008·Granted Jun 8, 2010·4 cites·35 claims
- 2172US8021941B2Bias-controlled deep trench substrate noise isolation integrated circuit device structuresIBM·Filed 2009·Granted Sep 20, 2011·4 cites·3 claims
- 2272US8009215B2Pixel sensor cell with frame storage capabilityIBM·Filed 2008·Granted Aug 30, 2011·3 cites·16 claims
- 2372US7767539B2Method of fabricating patterned SOI devices and the resulting device structuresIBM·Filed 2007·Granted Aug 3, 2010·5 cites·8 claims
- 2472US7652336B2Semiconductor devices and methods of manufacture thereofIBM·Filed 2007·Granted Jan 26, 2010·4 cites·29 claims
- 2571US12457823B2Photodetector structure with air gap and related methodsGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 28, 2025·0 cites·19 claims
- 2670US11616127B2Symmetric arrangement of field plates in semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Mar 28, 2023·0 cites·20 claims
- 2770US9450069B2Silicon germanium heterojunction bipolar transistor structure and methodULTRATECH INC·Filed 2013·Granted Sep 20, 2016·1 cites·9 claims
- 2870US7442595B2Bipolar transistor with collector having an epitaxial Si:C regionIBM·Filed 2006·Granted Oct 28, 2008·3 cites·12 claims
- 2969US12310124B2PhotodiodesGLOBALFOUNDRIES US INC·Filed 2022·Granted May 20, 2025·0 cites·18 claims
- 3069US11424377B2Photodiode with integrated, light focusing elementGLOBALFOUNDRIES US INC·Filed 2020·Granted Aug 23, 2022·0 cites·20 claims
- 3169US8212332B2Bias-controlled deep trench substrate noise isolation integrated circuit device structuresCHAPMAN PHILLIP FRANCIS·Filed 2011·Granted Jul 3, 2012·3 cites·17 claims
- 3268US12388015B2E-fuse with metal fillGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 12, 2025·0 cites·20 claims
- 3368US12154956B1Structure including multi-level field plate and method of forming the structureGLOBALFOUNDRIES US INC·Filed 2024·Granted Nov 26, 2024·0 cites·16 claims
- 3468US8455322B2Silicon germanium heterojunction bipolar transistor structure and methodGLUSCHENKOV OLEG·Filed 2010·Granted Jun 4, 2013·1 cites·20 claims
- 3568US7378324B2Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming sameIBM·Filed 2006·Granted May 27, 2008·3 cites·15 claims
- 3667US12349500B2Photodiode with insulator layer along intrinsic region sidewallGLOBALFOUNDRIES US INC·Filed 2022·Granted Jul 1, 2025·0 cites·18 claims
- 3767US7923750B2Pixel sensor cell, methods and design structure including optically transparent gateIBM·Filed 2008·Granted Apr 12, 2011·1 cites·18 claims
- 3866US12400927B2High-mobility-electron transistors having heat dissipating structuresGLOBALFOUNDRIES US INC·Filed 2022·Granted Aug 26, 2025·0 cites·14 claims
- 3966US12237407B2Heterojunction bipolar transistor with amorphous semiconductor regionsGLOBALFOUNDRIES US INC·Filed 2022·Granted Feb 25, 2025·0 cites·19 claims
- 4065US11316019B2Symmetric arrangement of field plates in semiconductor devicesGLOBALFOUNDRIES US INC·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 4165US7538004B2Method of fabrication for SiGe heterojunction bipolar transistor (HBT)IBM·Filed 2007·Granted May 26, 2009·2 cites·9 claims
- 4264US12324248B2Electrostatic discharge device with pinch resistorGLOBALFOUNDRIES US INC·Filed 2022·Granted Jun 3, 2025·0 cites·20 claims
- 4364US11777043B1Photodetectors with substrate extensions adjacent photodiodesGLOBALFOUNDRIES US INC·Filed 2022·Granted Oct 3, 2023·0 cites·17 claims
- 4464US7875908B2Selective links in silicon hetero-junction bipolar transistors using carbon doping and method of forming sameIBM·Filed 2008·Granted Jan 25, 2011·2 cites·11 claims
- 4563US12166476B2High voltage device with linearizing field plate configurationGLOBALFOUNDRIES US INC·Filed 2022·Granted Dec 10, 2024·0 cites·16 claims
- 4661US12471386B2Electrostatic discharge protection devicesGLOBALFOUNDRIES US INC·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 4761US12432910B2Electrically programmable fuse over lateral bipolar transistorGLOBALFOUNDRIES US INC·Filed 2022·Granted Sep 30, 2025·0 cites·17 claims
- 4861US8039351B2Method of fabricating hetero-junction bipolar transistor (HBT)IBM·Filed 2010·Granted Oct 18, 2011·1 cites·11 claims
- 4961US2025338645A1Structure with doped well between photodetector and optical interface of semiconductor layerGLOBALFOUNDRIES US INC·Filed 2024·Application pending·0 cites
- 5060US12376385B2Integrated circuit structures with conductive pathway through resistive semiconductor materialGLOBALFOUNDRIES US INC·Filed 2022·Granted Jul 29, 2025·0 cites·19 claims
Showing the top 50 of 92 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →