Inventor · disambiguated record
Rajesh Prasad
Also filed as: PRASAD RAJESH
22 granted patents·7 pending applications·35 citations·filing 2001–2025
92Inventor score
Technology areasH10P
Files withAPPLIED MATERIALS INC19VARIAN SEMICONDUCTOR EQUIPMENT ASS INC8VARIAN SEMICONDUCTOR EQUIPMENT1
Top patents by PatentIndex Score
29 records- 0194US11469107B2Highly etch selective amorphous carbon filmAPPLIED MATERIALS INC·Filed 2020·Granted Oct 11, 2022·4 cites·20 claims
- 0294US10403738B1Techniques for improved spacer in nanosheet deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Sep 3, 2019·11 cites·20 claims
- 0390US10727059B2Highly etch selective amorphous carbon filmAPPLIED MATERIALS INC·Filed 2018·Granted Jul 28, 2020·6 cites·20 claims
- 0483US12347687B2Etch rate modulation of FinFET through high-temperature ion implantationAPPLIED MATERIALS INC·Filed 2020·Granted Jul 1, 2025·1 cites·19 claims
- 0579US12112949B2Highly etch selective amorphous carbon filmAPPLIED MATERIALS INC·Filed 2022·Granted Oct 8, 2024·0 cites·29 claims
- 0678US12014927B2Highly etch selective amorphous carbon filmAPPLIED MATERIALS INC·Filed 2022·Granted Jun 18, 2024·0 cites·20 claims
- 0778US10332748B2Etch rate modulation through ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jun 25, 2019·2 cites·10 claims
- 0876US9934982B2Etch rate modulation through ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Apr 3, 2018·2 cites·20 claims
- 0973US2025037989A1Sequential plasma and thermal treatmentAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 1070US10811257B2Techniques for forming low stress etch-resistant mask using implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Oct 20, 2020·1 cites·16 claims
- 1169US12142475B2Sequential plasma and thermal treatmentAPPLIED MATERIALS INC·Filed 2022·Granted Nov 12, 2024·0 cites·19 claims
- 1269US10354875B1Techniques for improved removal of sacrificial maskVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Jul 16, 2019·1 cites·18 claims
- 1365US9018064B2Method of doping a polycrystalline transistor channel for vertical NAND devicesVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Apr 28, 2015·1 cites·19 claims
- 1463US10515802B2Techniques for forming low stress mask using implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Dec 24, 2019·1 cites·17 claims
- 1558US11626284B2Method of forming a 2-dimensional channel material, using ion implantationAPPLIED MATERIALS INC·Filed 2021·Granted Apr 11, 2023·0 cites·20 claims
- 1657US12469700B2Ion implantation for reduced hydrogen incorporation in amorphous siliconAPPLIED MATERIALS INC·Filed 2021·Granted Nov 11, 2025·0 cites·20 claims
- 1757US12444615B2Forming a doped hardmaskAPPLIED MATERIALS INC·Filed 2022·Granted Oct 14, 2025·0 cites·13 claims
- 1857US2025140566A1Selectivity of boron hard masks using ion implantAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 1956US2024071773A1Ion implantation for increased adhesion with resist materialAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2054US11756796B2Techniques for improved low dielectric constant film processingAPPLIED MATERIALS INC·Filed 2021·Granted Sep 12, 2023·0 cites·19 claims
- 2154US2024332009A1Ion implantation for reduced roughness of silicon nitrideAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2252US2024379376A1Implant into euv metal oxide photoresist module to reduce euv doseAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2351US11551904B2System and technique for profile modulation using high tilt anglesAPPLIED MATERIALS INC·Filed 2020·Granted Jan 10, 2023·0 cites·20 claims
- 2449US11114299B2Techniques for reducing tip to tip shorting and critical dimension variation during nanoscale patterningAPPLIED MATERIALS INC·Filed 2019·Granted Sep 7, 2021·0 cites·19 claims
- 2548US10804156B2Techniques for forming dual epitaxial source/drain semiconductor deviceVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Oct 13, 2020·0 cites·18 claims
- 2646US2025226211A1Increased etch resistance of nitride layers using chemical vapor deposition and hot ion implantationAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2746US2025226226A1Stress modulation of nitride layers using chemical vapor deposition and hot ion implantationAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2843US10629437B2Techniques and structure for forming dynamic random-access device using angled ionsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2018·Granted Apr 21, 2020·0 cites·17 claims
- 2942USD453470SAdjustable door barricadeFiled 2001·Granted Feb 12, 2002·5 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →