Inventor · disambiguated record
Ravikumar Ramachandran
Also filed as: RAMACHANDRAN RAVIKUMAR
112 granted patents·30 pending applications·1,094 citations·filing 1997–2024
99Inventor score
Top patents by PatentIndex Score
142 records- 0198US9431399B1Method for forming merged contact for semiconductor deviceIBM·Filed 2015·Granted Aug 30, 2016·31 cites·20 claims
- 0297US9496362B1Contact first replacement metal gateIBM·Filed 2016·Granted Nov 15, 2016·20 cites·17 claims
- 0396US8426300B2Self-aligned contact for replacement gate devicesRAMACHANDRAN RAVIKUMAR·Filed 2010·Granted Apr 23, 2013·49 cites·12 claims
- 0495US12328859B2Stacked FET SRAMIBM·Filed 2022·Granted Jun 10, 2025·2 cites·20 claims
- 0595US8928086B2Strained finFET with an electrically isolated channelIBM·Filed 2013·Granted Jan 6, 2015·19 cites·15 claims
- 0694US9190520B2Strained finFET with an electrically isolated channelIBM·Filed 2014·Granted Nov 17, 2015·15 cites·18 claims
- 0794US8928057B2Uniform finFET gate heightIBM·Filed 2012·Granted Jan 6, 2015·20 cites·7 claims
- 0894US8536656B2Self-aligned contacts for high k/metal gate process flowRAMACHANDRAN RAVIKUMAR·Filed 2011·Granted Sep 17, 2013·27 cites·14 claims
- 0994US7838908B2Semiconductor device having dual metal gates and method of manufactureIBM·Filed 2009·Granted Nov 23, 2010·28 cites·14 claims
- 1093US8629014B2Replacement metal gate structures for effective work function controlKWON UNOH·Filed 2010·Granted Jan 14, 2014·18 cites·11 claims
- 1192US9082851B2FinFET having suppressed leakage currentIBM·Filed 2013·Granted Jul 14, 2015·15 cites·13 claims
- 1292US8815693B2FinFET device formationIBM·Filed 2013·Granted Aug 26, 2014·13 cites·17 claims
- 1391US8912607B2Replacement metal gate structures providing independent control on work function and gate leakage currentIBM·Filed 2013·Granted Dec 16, 2014·11 cites·20 claims
- 1491US5807439AApparatus and method for improved washing and drying of semiconductor wafersSIEMENS AG·Filed 1997·Granted Sep 15, 1998·105 cites·37 claims
- 1590US9231072B2Multi-composition gate dielectric field effect transistorsIBM·Filed 2014·Granted Jan 5, 2016·10 cites·10 claims
- 1689US9431395B2Protection of semiconductor-oxide-containing gate dielectric during replacement gate formationIBM·Filed 2014·Granted Aug 30, 2016·7 cites·10 claims
- 1789US8829617B2Uniform finFET gate heightIBM·Filed 2012·Granted Sep 9, 2014·9 cites·6 claims
- 1889US7691701B1Method of forming gate stack and structure thereofIBM·Filed 2009·Granted Apr 6, 2010·16 cites·27 claims
- 1988US8450169B2Replacement metal gate structures providing independent control on work function and gate leakage currentKWON UNOH·Filed 2010·Granted May 28, 2013·10 cites·19 claims
- 2087US7943457B2Dual metal and dual dielectric integration for metal high-k FETsIBM·Filed 2009·Granted May 17, 2011·13 cites·15 claims
- 2186US11935929B2High aspect ratio shared contactsIBM·Filed 2021·Granted Mar 19, 2024·1 cites·14 claims
- 2286US9190406B2Fin field effect transistors having heteroepitaxial channelsIBM·Filed 2014·Granted Nov 17, 2015·7 cites·20 claims
- 2385US9536900B2Forming fins of different semiconductor materials on the same substrateGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 3, 2017·7 cites·13 claims
- 2485US7528027B1Structure and method for manufacturing device with ultra thin SOI at the tip of a V-shape channelIBM·Filed 2008·Granted May 5, 2009·12 cites·20 claims
- 2585US7498271B1Nitrogen based plasma process for metal gate MOS deviceIBM·Filed 2008·Granted Mar 3, 2009·10 cites·2 claims
- 2685US7485510B2Field effect device including inverted V shaped channel region and method for fabrication thereofIBM·Filed 2006·Granted Feb 3, 2009·15 cites·1 claims
- 2785US6443811B1Ceria slurry solution for improved defect control of silicon dioxide chemical-mechanical polishingINFINEON TECHNOLOGIES AG·Filed 2000·Granted Sep 3, 2002·40 cites·15 claims
- 2884US9224826B2Multiple thickness gate dielectrics for replacement gate field effect transistorsIBM·Filed 2014·Granted Dec 29, 2015·6 cites·10 claims
- 2984US9214541B2Self-aligned contact for replacement gate devicesGLOBALFOUNDRIES INC·Filed 2013·Granted Dec 15, 2015·6 cites·20 claims
- 3084US9099393B2Enabling enhanced reliability and mobility for replacement gate planar and FinFET structuresIBM·Filed 2013·Granted Aug 4, 2015·5 cites·14 claims
- 3184US7122439B2Method of fabricating a bottle trench and a bottle trench capacitorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Oct 17, 2006·26 cites·16 claims
- 3283US6858441B2MRAM MTJ stack to conductive line alignment methodINFINEON TECHNOLOGIES AG·Filed 2002·Granted Feb 22, 2005·37 cites·27 claims
- 3382US8236637B2Planar silicide semiconductor structureUTOMO HENRY K·Filed 2010·Granted Aug 7, 2012·7 cites·8 claims
- 3481US9059290B2FinFET device formationIBM·Filed 2014·Granted Jun 16, 2015·4 cites·8 claims
- 3580US6569769B1Slurry-less chemical-mechanical polishingIBM·Filed 2000·Granted May 27, 2003·22 cites·22 claims
- 3680US6358855B1Clean method for recessed conductive barriersINFINEON TECHNOLOGIES AG·Filed 2000·Granted Mar 19, 2002·24 cites·15 claims
- 3779US9577068B2Protection of semiconductor-oxide-containing gate dielectric during replacement gate formationIBM·Filed 2016·Granted Feb 21, 2017·2 cites·17 claims
- 3879US9029913B2Silicon-germanium fins and silicon fins on a bulk substrateIBM·Filed 2013·Granted May 12, 2015·5 cites·22 claims
- 3979US8420491B2Structure and method for replacement metal gate field effect transistorsUTOMO HENRY K·Filed 2010·Granted Apr 16, 2013·7 cites·12 claims
- 4078US10832971B2Fabricating tapered semiconductor devicesIBM·Filed 2018·Granted Nov 10, 2020·2 cites·20 claims
- 4178US9293461B2Replacement metal gate structures for effective work function controlGLOBALFOUNDRIES INC·Filed 2013·Granted Mar 22, 2016·4 cites·9 claims
- 4278US7122437B2Deep trench capacitor with buried plate electrode and isolation collarIBM·Filed 2003·Granted Oct 17, 2006·23 cites·26 claims
- 4377US9496368B2Partial spacer for increasing self aligned contact process marginsIBM·Filed 2014·Granted Nov 15, 2016·2 cites·14 claims
- 4477US9349650B2Low resistance and defect free epitaxial semiconductor material for providing merged FinFETsGLOBALFOUNDRIES INC·Filed 2014·Granted May 24, 2016·3 cites·16 claims
- 4576US9985104B2Contact first replacement metal gateIBM·Filed 2016·Granted May 29, 2018·2 cites·7 claims
- 4676US8436427B2Dual metal and dual dielectric integration for metal high-K FETsCHUDZIK MICHAEL P·Filed 2011·Granted May 7, 2013·4 cites·20 claims
- 4775US6723611B2Vertical hard maskIBM·Filed 2002·Granted Apr 20, 2004·18 cites·19 claims
- 4875US5932493AMethod to minimize watermarks on silicon substratesIBM·Filed 1997·Granted Aug 3, 1999·47 cites·14 claims
- 4974US10693005B2Reliable gate contacts over active areasIBM·Filed 2019·Granted Jun 23, 2020·1 cites·7 claims
- 5074US9059134B2Self-aligned contacts for high k/metal gate process flowIBM·Filed 2013·Granted Jun 16, 2015·3 cites·11 claims
Showing the top 50 of 142 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →