Inventor · disambiguated record
Rafael Rios
Also filed as: RIOS RAFAEL
158 granted patents·13 pending applications·1,028 citations·filing 1999–2025
99Inventor score
Top patents by PatentIndex Score
171 records- 0199US11664371B1Multi-function threshold gate with adaptive threshold and stacked planar paraelectric capacitorsKEPLER COMPUTING INC·Filed 2021·Granted May 30, 2023·7 cites·20 claims
- 0299US11418197B1Majority logic gate having paraelectric input capacitors and a local conditioning mechanismKEPLER COMPUTING INC·Filed 2021·Granted Aug 16, 2022·10 cites·20 claims
- 0399US11303280B1Ferroelectric or paraelectric based sequential circuitKEPLER COMPUTING INC·Filed 2021·Granted Apr 12, 2022·12 cites·22 claims
- 0498US11705906B1Majority logic gate having ferroelectric input capacitors and a pulsing scheme coupled to a conditioning logicKEPLER COMPUTING INC·Filed 2021·Granted Jul 18, 2023·3 cites·18 claims
- 0598US11652487B1Parallel pull-up and pull-down networks controlled asynchronously by majority gate or minority gate logicKEPLER COMPUTING INC·Filed 2021·Granted May 16, 2023·7 cites·20 claims
- 0698US11641205B1Reset mechanism for a chain of majority or minority gates having paraelectric materialKEPLER COMPUTING INC·Filed 2021·Granted May 2, 2023·6 cites·20 claims
- 0798US11374575B1Majority logic gate with non-linear input capacitors and conditioning logicKEPLER COMPUTING INC·Filed 2021·Granted Jun 28, 2022·8 cites·18 claims
- 0898US11277137B1Majority logic gate with non-linear input capacitorsKEPLER COMPUTING INC·Filed 2021·Granted Mar 15, 2022·20 cites·20 claims
- 0998US9583491B2CMOS nanowire structureKIM SEIYON·Filed 2015·Granted Feb 28, 2017·28 cites·15 claims
- 1098US9224810B2CMOS nanowire structureKIM SEIYON·Filed 2011·Granted Dec 29, 2015·44 cites·23 claims
- 1198US9129829B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2014·Granted Sep 8, 2015·62 cites·13 claims
- 1298US8753942B2Silicon and silicon germanium nanowire structuresKUHN KELIN J·Filed 2010·Granted Jun 17, 2014·144 cites·30 claims
- 1397US12289894B1Method of fabricating transistors and stacked planar capacitors for memory and logic applicationsKEPLER COMPUTING INC·Filed 2022·Granted Apr 29, 2025·3 cites·20 claims
- 1497US9859368B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2016·Granted Jan 2, 2018·11 cites·15 claims
- 1597US9484447B2Integration methods to fabricate internal spacers for nanowire devicesKIM SEIYON·Filed 2012·Granted Nov 1, 2016·35 cites·9 claims
- 1697US7820513B2Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabricationINTEL CORP·Filed 2008·Granted Oct 26, 2010·81 cites·3 claims
- 1797US7456476B2Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabricationINTEL CORP·Filed 2003·Granted Nov 25, 2008·222 cites·12 claims
- 1896US12316319B1Multi-function linear threshold gate with input based adaptive thresholdKEPLER COMPUTING INC·Filed 2021·Granted May 27, 2025·2 cites·20 claims
- 1996US11888479B1Non-linear polar material based low power multiplier with NOR and NAND gate based reset mechanismKEPLER COMPUTING INC·Filed 2021·Granted Jan 30, 2024·2 cites·20 claims
- 2096US11699699B1Multi-function threshold gate with adaptive threshold and stacked planar ferroelectric capacitorsKEPLER COMPUTING INC·Filed 2021·Granted Jul 11, 2023·3 cites·20 claims
- 2196US11139400B2Non-planar semiconductor device having hybrid geometry-based active regionGOOGLE LLC·Filed 2020·Granted Oct 5, 2021·4 cites·20 claims
- 2295US8273626B2Nonplanar semiconductor device with partially or fully wrapped around gate electrode and methods of fabricationHARELAND SCOTT A·Filed 2010·Granted Sep 25, 2012·28 cites·6 claims
- 2395US7973389B2Isolated tri-gate transistor fabricated on bulk substrateINTEL CORP·Filed 2009·Granted Jul 5, 2011·23 cites·6 claims
- 2494US9608059B2Semiconductor device with isolated body portionCAPPELLANI ANNALISA·Filed 2011·Granted Mar 28, 2017·18 cites·28 claims
- 2593US10074573B2CMOS nanowire structureINTEL CORP·Filed 2017·Granted Sep 11, 2018·8 cites·18 claims
- 2693US9595581B2Silicon and silicon germanium nanowire structuresINTEL CORP·Filed 2015·Granted Mar 14, 2017·7 cites·19 claims
- 2793US9564522B2Nanowire structures having non-discrete source and drain regionsCEA STEPHEN M·Filed 2015·Granted Feb 7, 2017·6 cites·9 claims
- 2893US9087863B2Nanowire structures having non-discrete source and drain regionsCEA STEPHEN M·Filed 2011·Granted Jul 21, 2015·10 cites·17 claims
- 2993US6960517B2N-gate transistorINTEL CORP·Filed 2003·Granted Nov 1, 2005·72 cites·6 claims
- 3092US10026829B2Semiconductor device with isolated body portionINTEL CORP·Filed 2017·Granted Jul 17, 2018·8 cites·25 claims
- 3192US8890120B2Tunneling field effect transistors (TFETs) for CMOS approaches to fabricating N-type and P-type TFETsKOTLYAR ROZA·Filed 2012·Granted Nov 18, 2014·13 cites·14 claims
- 3291US11967954B1Majority or minority logic gate with non-linear input capacitors without resetKEPLER COMPUTING INC·Filed 2022·Granted Apr 23, 2024·1 cites·20 claims
- 3391US10964701B2Vertical shared gate thin-film transistor-based charge storage memoryINTEL CORP·Filed 2017·Granted Mar 30, 2021·6 cites·15 claims
- 3491US2025331249A1Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2025·Application pending·0 cites
- 3590US11721690B1Method of adjusting threshold of a ferroelectric capacitive-input circuitKEPLER COMPUTING INC·Filed 2021·Granted Aug 8, 2023·1 cites·20 claims
- 3690US10847656B2Fabrication of non-planar IGZO devices for improved electrostaticsINTEL CORP·Filed 2015·Granted Nov 24, 2020·6 cites·18 claims
- 3789US12363967B2Integration methods to fabricate internal spacers for nanowire devicesSONY GROUP CORP·Filed 2023·Granted Jul 15, 2025·0 cites·8 claims
- 3889US12155383B1Reset mechanism for an adder or a multiplier having paraelectric materialKEPLER COMPUTING INC·Filed 2021·Granted Nov 26, 2024·1 cites·20 claims
- 3989US12118330B1Low power multiplier with non-linear polar material based reset mechanism with sequential resetKEPLER COMPUTING INC·Filed 2021·Granted Oct 15, 2024·1 cites·20 claims
- 4089US2025185316A1Silicon and silicon germanium nanowire structuresSONY GROUP CORP·Filed 2024·Application pending·0 cites
- 4188US9583487B2Semiconductor device having metallic source and drain regionsGILES MARTIN D·Filed 2011·Granted Feb 28, 2017·10 cites·23 claims
- 4285US12308838B1Exclusive-or logic gate with non-linear input capacitorsKEPLER COMPUTING INC·Filed 2023·Granted May 20, 2025·0 cites·20 claims
- 4385US12212321B1Non-linear polar material based flip-flopKEPLER COMPUTING INC·Filed 2023·Granted Jan 28, 2025·0 cites·18 claims
- 4485US10424580B2Semiconductor devices having modulated nanowire countsCAPPELLANI ANNALISA·Filed 2011·Granted Sep 24, 2019·6 cites·25 claims
- 4585US9825130B2Leakage reduction structures for nanowire transistorsINTEL CORP·Filed 2013·Granted Nov 21, 2017·5 cites·21 claims
- 4684US12107579B1Method for conditioning majority or minority gateKEPLER COMPUTING INC·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 4784US10340275B2Stackable thin film memoryINTEL CORP·Filed 2015·Granted Jul 2, 2019·4 cites·20 claims
- 4883US12125916B2Nanowire structures having non-discrete source and drain regionsGOOGLE LLC·Filed 2022·Granted Oct 22, 2024·0 cites·7 claims
- 4983US11777504B1Non-linear polar material based latchKEPLER COMPUTING INC·Filed 2022·Granted Oct 3, 2023·0 cites·20 claims
- 5083US10580860B2Integration methods to fabricate internal spacers for nanowire devicesINTEL CORP·Filed 2019·Granted Mar 3, 2020·1 cites·21 claims
Showing the top 50 of 171 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →